Silicon Dioxide wafer SiO2 wafer yuzuye Umuhengeri, Icyiciro Cyambere

Ibisobanuro bigufi:

Ubushuhe bwa Thermal okiside nigisubizo cyo kwerekana wafer ya silicon muguhuza imiti ya okiside nubushyuhe kugirango ikore urwego rwa dioxyde de silicon (SiO2) .Ikigo cyacu kirashobora guhitamo flake ya dioxyde de silisike ya silicon ifite ibipimo bitandukanye kubakiriya, bifite ireme ryiza; uburebure bwa oxyde, ubwuzuzanye, uburinganire hamwe no kurwanya kristu yerekanwe byose bishyirwa mubikorwa bikurikije amahame yigihugu.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Kumenyekanisha agasanduku ka wafer

Ibicuruzwa	Ubushuhe bwa Oxide (Si + SiO2) wafer
Uburyo bwo kubyaza umusaruro	LPCVD
Ubuso bwo hejuru	SSP / DSP
Diameter	2inch / 3inch / 4inch / 5inch / 6inch
Andika	Ubwoko bwa P / N.
Oxidation Layeri thicnkess	100nm ~ 1000nm
Icyerekezo	<100> <111>
Kurwanya amashanyarazi	0.001-25000 (Ω • cm)
Gusaba	Ikoreshwa rya synchrotron imirasire yicyitegererezo, PVD / CVD itwikiriye nka substrate, magnetron sputtering sample sample, XRD, SEM,Imbaraga za Atome, infrarafurike ya sprosroscopi, fluorescence spekitroscopi nibindi bisesengura byikizamini, insimburangingo ya molekile beam epitaxial, substrate X-ray yisesengura rya semiconductor

Wafer ya Silicon oxyde ni firime ya dioxyde de silicon ikura hejuru ya wafer ya silicon ikoresheje ogisijeni cyangwa umwuka wamazi mubushyuhe bwinshi (800 ° C ~ 1150 ° C) ukoresheje uburyo bwa okiside yumuriro hamwe nibikoresho byumuyaga mwinshi. Ubunini bwibikorwa buva kuri nanometero 50 kugeza kuri microne 2, ubushyuhe bwibikorwa bugera kuri dogere selisiyusi 1100, uburyo bwo gukura bugabanyijemo "ogisijeni itose" na "ogisijeni yumye" ubwoko bubiri. Oxide ya Thermal ni "oxyde" ikuze ya oxyde, ifite uburinganire buringaniye, ubwinshi bwimbaraga nimbaraga za dielectric kurusha CVD yabitsemo oxyde, bikavamo ubuziranenge.

Okisijeni yumye

Silicon ikora na ogisijeni kandi oxyde ya oxyde ihora igenda yerekeza kuri substrate. Okiside yumye igomba gukorwa mubushyuhe kuva kuri 850 kugeza 1200 ° C, hamwe niterambere ryikigereranyo cyo hasi, kandi irashobora gukoreshwa mugukura kwa MOS gukingirwa. Okiside yumye ihitamo kuruta okiside itose mugihe hakenewe ubuziranenge bwo hejuru, ultra-thin silicon oxyde. Ubushobozi bwa okiside yumye: 15nm ~ 300nm.

2. Oxidation itose

Ubu buryo bukoresha umwuka wamazi kugirango ube urwego rwa oxyde yinjira mu itanura ryubushyuhe bukabije. Kwiyongera kwa okisijeni itose ni bibi cyane kuruta okisijeni yumye ya ogisijeni yumye, ariko ugereranije na okisijeni yumye ya okisijeni yumye ni uko ifite umuvuduko mwinshi, ikwiranye no gukura kwa firime zirenga 500nm. Ubushobozi bwa okiside itose: 500nm ~ 2µm.

Umuyoboro wa AEMD wumuyaga wa okiside itanura ni umuyoboro wa feza utambitse wa Tchèque, urangwa no guhagarara neza, guhuza firime neza no kugenzura ibice byiza. Umuyoboro wa silicon oxyde urashobora gutunganya waferi zigera kuri 50 kuri buri muyoboro, hamwe n’imbere n’imbere hagati ya wafers.