2 cm 50.8mm Sapphire Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um

2 cm 50.8mm Safiro Wafer C-Indege M-indege R-indege A-indege Ubunini 350um 430um 500um Ishusho Yerekanwe

Ibisobanuro bigufi:

Safiro ni ikintu cyihariye cyo guhuza imiterere yumubiri, imiti n’ibikoresho bya optique, bigatuma irwanya ubushyuhe bwinshi, ihungabana ry’ubushyuhe, isuri y’amazi n’umusenyi, hamwe no gushushanya.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Kugaragaza ibyerekezo bitandukanye

Icyerekezo	C (0001) -Igice		R (1-102) -Igice		M (10-10) -Igisubizo	A (11-20) -Igice
Umutungo wumubiri	C axis ifite urumuri rwa kirisiti, naho izindi axe zifite urumuri rubi. Indege C iringaniye, nibyiza gukata.		R-indege ikomeye cyane kurenza A.		M indege ikandagiye, ntabwo byoroshye gukata, byoroshye gukata.	Ubukomezi bwa A-indege buri hejuru cyane ugereranije na C-indege, igaragarira mukurwanya kwambara, kwihanganira gushushanya no gukomera cyane; Kuruhande A-indege ni indege ya zigzag, byoroshye guca;
Porogaramu	C-yerekanwe na safiro substrate ikoreshwa mugukuza amafirime yabitswe III-V na II-VI, nka nitride ya gallium, ishobora kubyara ibicuruzwa bya LED byubururu, diode ya laser, hamwe na progaramu ya infragre. Ibi biterwa ahanini nuko inzira yo gukura kwa safiro kristu ikikije C-axis irakuze, igiciro ni gito, imiterere yumubiri na chimique irahagaze, kandi tekinoroji ya epitaxy kuri C-indege irakuze kandi ihamye.		R-yerekanwe substrate gukura kwa silicon itandukanye yabitswe, ikoreshwa muri microelectronics ihuza imiyoboro. Byongeye kandi, umuvuduko mwinshi wuzuzanya hamwe na sensor sensor birashobora kandi gushirwaho mugikorwa cyo gutunganya firime yo gukura kwa epitaxial silicon. R-substrate irashobora kandi gukoreshwa mugukora amasasu, ibindi bintu birenze urugero, birwanya imbaraga nyinshi, gallium arsenide.		Ikoreshwa cyane cyane mugukuza amafilime adafite polar / igice-polar GaN epitaxial kugirango tunoze imikorere yumucyo.	A-yerekanwe kuri substrate itanga uruhushya rumwe / ruciriritse, kandi urwego rwo hejuru rwokwirinda rukoreshwa muburyo bwa tekinoroji ya mikorobe. Ubushyuhe bwo hejuru burashobora kubyazwa umusaruro A-shingiro rirambuye.
Ubushobozi bwo gutunganya	Pattern Sapphire Substrate (PSS): Muburyo bwo Gukura cyangwa Etching, nanoscale yihariye ya microstructure isanzwe yateguwe kandi ikorwa kumurongo wa safiro kugirango igenzure imiterere yumucyo wa LED, kandi igabanye inenge zitandukanye muri GaN ikura kuri substrate ya safiro. , kuzamura ubwiza bwa epitaxy, no kuzamura kwimbere kwimbere ya LED no kongera imikorere yo gukuramo urumuri. Byongeye kandi, prism ya safiro, indorerwamo, lens, umwobo, cone nibindi bice byubatswe birashobora gutegurwa ukurikije ibyo abakiriya bakeneye.
Kumenyekanisha umutungo	Ubucucike	Gukomera	gushonga	Ironderero ryoroshye (rigaragara na infragre)	Kohereza (DSP)	Dielectric ihoraho
Kumenyekanisha umutungo	3.98g / cm3	9 (mohs)	2053 ℃	1.762 ~ 1.770	≥85%	11.58@300K kuri C axis (9.4 kuri A axis）

Igishushanyo kirambuye

avcasvb (1)

avcasvb (2)

avcasvb (3)

Mbere: 8 Inch Lithium Niobate Wafer LiNbO3 LN wafer

Ibikurikira: 2 cm 50.8mm Ubunini 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Indege M-indege R-indege A-indege

Andika ubutumwa bwawe hano hanyuma utwohereze

Ibyiciro byibicuruzwa