English

2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko cyangwa Semi-Insulating SiC Substrates

2 inch Silicon Carbide Wafers 6H cyangwa 4H N-bwoko cyangwa Semi-Insulating SiC Substrates Ishusho Yerekanwe
  • 2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko cyangwa Semi-Insulating SiC Substrates
  • 2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko cyangwa Semi-Insulating SiC Substrates
  • 2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko cyangwa Semi-Insulating SiC Substrates
  • 2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko cyangwa Semi-Insulating SiC Substrates

Ibisobanuro bigufi:

Carbide ya silicon (Tankeblue SiC wafers), izwi kandi nka carborundum, ni igice cya kabiri kirimo silikoni na karubone hamwe na formulaire ya SiC.SiC ikoreshwa mubikoresho bya elegitoroniki ya semiconductor ikora ku bushyuhe bwinshi cyangwa kuri voltage nyinshi, cyangwa byombi.SiC nayo ni kimwe mu bice byingenzi bigize LED, ni substrate izwi cyane mu gukura ibikoresho bya GaN, kandi ikora nk'ikwirakwiza ubushyuhe muri- amashanyarazi LED.


Ibicuruzwa birambuye

Ibicuruzwa

Ibicuruzwa byagarutsweho

4H SiC wafer N-ubwoko
Diameter: 2 cm 50.8mm |4 cm 100mm |6 cm 150mm
Icyerekezo: off axis 4.0˚ yerekeza kuri <1120> ± 0.5˚
Kurwanya: <0.1 ohm.cm
Ubukonje: Si-isura CMP Ra <0.5nm, C-isura optique poli Ra <1 nm

4H SiC wafer Semi-izunguruka
Diameter: 2 cm 50.8mm |4 cm 100mm |6 cm 150mm
Icyerekezo: ku murongo {0001} ± 0.25˚
Kurwanya:> 1E5 ohm.cm
Ubukonje: Si-isura CMP Ra <0.5nm, C-isura optique poli Ra <1 nm

1. Ibikorwa remezo 5G - gutanga amashanyarazi.
Itumanaho ryitumanaho nisoko ryingufu za seriveri hamwe n’itumanaho rya sitasiyo.Itanga ingufu z'amashanyarazi kubikoresho bitandukanye byohereza kugirango imikorere isanzwe ya sisitemu y'itumanaho.

2. Kwishyuza ikirundo cyibinyabiziga bishya byingufu - module yingufu zo kwishyuza ikirundo.
Ubushobozi buhanitse hamwe nimbaraga nyinshi zumuriro wamashanyarazi birashobora kugerwaho ukoresheje karbide ya silicon mumashanyarazi yumuriro, kugirango uzamure umuvuduko wumuriro kandi ugabanye igiciro cyo kwishyuza.

3. Ikigo kinini cyamakuru, interineti yinganda - gutanga amashanyarazi.
Seriveri itanga amashanyarazi ni seriveri yububiko bwisomero.Seriveri itanga imbaraga kugirango yizere imikorere isanzwe ya seriveri.Gukoresha amashanyarazi ya silicon karbide mumashanyarazi ya seriveri birashobora guteza imbere ubwinshi bwamashanyarazi nubushobozi bwogutanga amashanyarazi, kugabanya ingano yikigo cyamakuru muri rusange, kugabanya igiciro rusange cyubwubatsi bwikigo cyamakuru, no kugera kubidukikije hejuru gukora neza.

4. Uhv - Gukoresha uburyo bworoshye bwo kohereza DC yamashanyarazi.

5. Guhuza gariyamoshi yihuta cyane no guhuza gari ya moshi hagati - guhinduranya imashini, guhinduranya amashanyarazi, guhinduranya imashini, ibikoresho bifasha.

Parameter

Ibyiza igice Silicon SiC GaN
Ubugari bwa bandgap eV 1.12 3.26 3.41
Umwanya wo gusenyuka MV / cm 0.23 2.2 3.3
Kugenda kwa elegitoronike cm ^ 2 / V. 1400 950 1500
Gutwara ubutwari 10 cm 7 cm / s 1 2.7 2.5
Amashanyarazi W / cmK 1.5 3.8 1.3

Igishushanyo kirambuye

2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko4
2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko5
2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko6
2 cm Silicon Carbide Wafers 6H cyangwa 4H N-ubwoko7
  • Mbere:
  • Ibikurikira:
    • Andika ubutumwa bwawe hano hanyuma utwohereze

    Ibyiciro byibicuruzwa

    Kanda enter kugirango ushakishe cyangwa ESC kugirango ufunge