2inch 3inch 4inch InP epitaxial wafer substrate APD yerekana urumuri rwa fibre optique cyangwa LiDAR

2inch 3inch 4inch InP epitaxial wafer substrate ya APD yerekana urumuri rwa fibre optique cyangwa LiDAR Ishusho Yerekanwe

Ibisobanuro bigufi:

InP epitaxial substrate nibikoresho fatizo byo gukora APD, mubisanzwe ibikoresho bya semiconductor byashyizwe kuri substrate nikoranabuhanga ryiterambere rya epitaxial. Ibikoresho bisanzwe bikoreshwa birimo silikoni (Si), gallium arsenide (GaAs), nitride ya gallium (GaN), nibindi, hamwe nibikoresho byiza bifotora. Photodetector ya APD ni ubwoko bwihariye bwa fotodetekeri ikoresha ingaruka za fotora ya avalanche kugirango yongere ibimenyetso byerekana. Iyo fotone ibaye kuri APD, habaho electron-umwobo. Kwihuta kwaba batwara munsi yumuriro wumuriro wamashanyarazi birashobora gutuma hashyirwaho abatwara benshi, "ingaruka ya avalanche", yongerera cyane umusaruro usohoka.
Epitaxial wafers ikura na MOCvD niyo yibandwaho na avalanche Photodetection diode ya porogaramu. Igice cyo gukuramo cyateguwe nibikoresho bya U-InGaAs hamwe na doping yinyuma <5E14. Urwego rukora rushobora gukoresha InP cyangwa InAlAslayer. InP epitaxial substrate nibikoresho byibanze byo gukora APD, igena imikorere ya optique ya optique. APD Photodetector ni ubwoko bwa sensibilité yo hejuru ya Photodetector, ikoreshwa cyane mubitumanaho, kumva no kwerekana amashusho.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibyingenzi byingenzi byurupapuro rwa InP laser epitaxial harimo

1.
. Kurugero, kuri 480 nm, imbaraga zumucyo hamwe na kwantani yo hanze ni 11.2% na 98.8%.
3. Imikorere yabatwara: InP nanoparticles (NPs) yerekana imyitwarire yangirika kabiri mugihe cyo gukura kwa epitaxial. Igihe cyangirika cyihuse cyatewe no gutera inshinge mu gipimo cya InGaAs, mugihe igihe cyo kubora gahoro kijyanye no kongera ubwikorezi muri InP NPs.
4.
5. Uburyo bwo gukora: Impapuro za epitaxial InP zisanzwe zihingwa kuri substrate na molekile beam epitaxy (MBE) cyangwa tekinoroji ya chimique de vapor (MOCVD) kugirango igere kuri firime nziza.
Ibiranga bituma InP laser epitaxial wafers ifite progaramu zingenzi mugutumanaho kwa fibre optique, gukwirakwiza kwant kwinshi no gukwirakwiza optique.

Porogaramu nyamukuru ya InP laser epitaxial tablets irimo

1. Photonics: InP laseri na disikete zikoreshwa cyane mubitumanaho bya optique, ibigo byamakuru, amashusho yerekana infragre, biometrics, 3D sensing na LiDAR.

3. Lazeri zidafite uburinganire: Gukoresha InP ishingiye kuri kwant kwiza kwiza muri lazeri yo hagati (nka microni 4-38), harimo kumva gaze, guturika guturika no gufata amashusho ya infragre.

4. Fotonike ya Silicon: Binyuze muburyo bwa tekinoroji yo guhuza ibice, InP laser yimurirwa muri substrate ishingiye kuri silicon kugirango ikore urubuga rwimikorere myinshi ya silicon optoelectronic.

5.Ibikoresho byo hejuru bikora: Ibikoresho bya InP bikoreshwa mugukora lazeri ikora cyane, nka InGaAsP-InP transistor lazeri ifite uburebure bwa mikoro 1.5.

XKH itanga ibyuma byihariye bya InP epitaxial wafers ifite imiterere nubunini butandukanye, ikubiyemo porogaramu zitandukanye nka itumanaho rya optique, sensor, sitasiyo fatizo ya 4G / 5G, nibindi. Ibicuruzwa bya XKH bikozwe hifashishijwe ibikoresho bigezweho bya MOCVD kugirango bikore neza kandi byizewe. Kubijyanye na logistique, XKH ifite imiyoboro minini yimiyoboro mpuzamahanga, irashobora gukora neza umubare wibyateganijwe, kandi igatanga serivisi zongerewe agaciro nko kunaniza, gutandukanya, nibindi. ibihe byiza no gutanga. Nyuma yo kuhagera, abakiriya barashobora kubona ubufasha bwa tekiniki bwuzuye na serivisi nyuma yo kugurisha kugirango barebe ko ibicuruzwa byakoreshejwe neza.