Imashini ipima urumuri rwa APD ya InP epitaxial wafer substrate ifite uburebure bwa santimetero 2.5 na santimetero 3.5, ikoresha ikoranabuhanga rya APD rikoreshwa mu gutumanaho rya fiber optic cyangwa LiDAR.

Ishusho ya APD y'urumuri rwa InP epitaxial wafer ifite uburebure bwa santimetero 2.5 na santimetero 3.5. Ishusho ya LiDAR ifite uburebure bwa santimetero 4.5.

Ibisobanuro bigufi:

InP epitaxial substrate ni yo shingiro ry’ibikoresho byo gukora APD, ubusanzwe ibikoresho bya semiconductor bishyirwa kuri substrate hakoreshejwe ikoranabuhanga ryo gukura kwa epitaxial. Ibikoresho bikunze gukoreshwa birimo silikoni (Si), gallium arsenide (GaAs), gallium nitride (GaN), nibindi, bifite imiterere myiza y’amashanyarazi. APD photodetector ni ubwoko bwihariye bwa photodetector bukoresha ingaruka za photoelectric za avalanche kugira ngo bwongere ikimenyetso cyo kumenya. Iyo fotoni zibaye kuri APD, hakorwa electron-hole pairs. Kwihutisha kw'ibi bikoresho munsi y'imikorere y'amashanyarazi bishobora gutuma habaho ibindi bikoresho byinshi, "ingaruka za avalanche", byongerera cyane umuvuduko w'amashanyarazi.
Uduce twa epitaxial twahinzwe na MOCvD ni two twibandwaho cyane mu gukoresha diode yo gupima inkombe. Uduce twa absorbation twateguwe hakoreshejwe ibikoresho bya U-InGaAs bifite doping ya background <5E14. Uduce twa functional dushobora gukoresha InP cyangwa InAlAslayer. InP epitaxial substrate ni yo bikoresho by'ibanze mu gukora APD, igena imikorere ya optique detector. APD photodetector ni ubwoko bwa photodetector ifite ubushobozi bwo gupima inkombe, ikoreshwa cyane mu itumanaho, kumva no gufata amashusho.

Ohereza imeri kuri twe

Ibiranga

Ibintu by'ingenzi bigize urupapuro rwa epitaxial rwa laser ya InP birimo

1. Ibiranga icyuho cy'urukiramende: InP ifite icyuho gito cy'urukiramende, gikwiriye gupimwa urumuri rwa infrared rw'urumuri rurerure, cyane cyane mu rurerure rw'uburebure kuva kuri 1.3μm kugeza kuri 1.5μm.
2. Imikorere y'urumuri: Filimi ya InP epitaxial ifite imikorere myiza y'urumuri, nk'imbaraga z'urumuri n'ubushobozi bw'ingufu z'inyuma ku bunini bw'urumuri butandukanye. Urugero, kuri 480 nm, imbaraga z'urumuri n'ubushobozi bw'ingufu z'inyuma ni 11.2% na 98.8%, uko bikurikirana.
3. Imiterere y'ingufu: InP nanoparticles (NPs) zigaragaza imyitwarire yo kubora inshuro ebyiri mu gihe cy'ikura rya epitaxial. Igihe cyo kubora vuba giterwa no kwinjizwa kwa carrier mu cyiciro cya InGaAs, mu gihe igihe cyo kubora buhoro gifitanye isano no kongera kwihuza kwa carrier muri InP NPs.
4. Ibiranga ubushyuhe bwinshi: Ibikoresho by'amazi bya AlGaInAs/InP quantum bifite imikorere myiza cyane mu bushyuhe bwinshi, bishobora gukumira amazi ava mu migezi no kunoza imiterere y'ubushyuhe bwinshi bwa laser.
5. Uburyo bwo gukora: Impapuro za InP epitaxial zikunze guhingwa ku butaka hakoreshejwe ikoranabuhanga rya molekile epitaxy (MBE) cyangwa MOCVD (metal-organic chemical vapor deposition) kugira ngo haboneke filime nziza.
Izi ngingo zituma InP laser epitaxial wafers igira akamaro kanini mu itumanaho rya fibre optique, gukwirakwiza urufunguzo rwa quantum no kubona urumuri ruri kure.

Imikoreshereze y'ingenzi ya InP laser epitaxial tablets irimo

1. Fotoniki: InP lasers na detectors bikoreshwa cyane mu itumanaho ry’amajwi, mu bigo by’amakuru, mu gufata amashusho ya infrared, mu biometrike, mu gupima 3D na LiDAR.

2. Itumanaho: Ibikoresho bya InP bifite akamaro kanini mu guhuza cyane lazeri zikoresha silicon, cyane cyane mu itumanaho rya fibre optique.

3. Lazeri zo mu bwoko bwa Infrared: Imikoreshereze ya lazeri zo mu bwoko bwa InP zishingiye ku ruziga rwa quantum mu gice cyo hagati cya infrared (nk'imikoroni 4-38), harimo no kubona gaze, kumenya ibisasu no gufata amashusho ya infrared.

4. Silicon photonics: Binyuze mu ikoranabuhanga ryo guhuza ibintu bitandukanye, laser ya InP yimurirwa muri substrate ishingiye kuri silicon kugira ngo ikore platform yo guhuza ibintu ya silicon optoelectronic ifite imikorere myinshi.

5.Lazeri zikora neza cyane: Ibikoresho bya InP bikoreshwa mu gukora lazeri zikora neza cyane, nka lazeri za transistor za InGaAsP-InP zifite uburebure bwa mikoroni 1.5.

XKH itanga wafer za InP epitaxial zikozwe mu buryo bwihariye zifite imiterere n'ubugari butandukanye, zikubiyemo porogaramu zitandukanye nko gutumanaho hakoreshejwe optique, sensors, 4G/5G base stations, nibindi. Ibicuruzwa bya XKH bikorwa hakoreshejwe ibikoresho bya MOCVD bigezweho kugira ngo bigire umusaruro mwiza kandi byizewe. Mu bijyanye n'ibijyanye n'ibikoresho, XKH ifite inzira nyinshi mpuzamahanga zo gushakiramo ibicuruzwa, ishobora guhangana n'umubare w'ibicuruzwa byatumijwe mu buryo bworoshye, kandi igatanga serivisi z'agaciro nko kugabanya, gutandukanya, nibindi. Uburyo bwo gutanga ibicuruzwa neza butuma bitangwa ku gihe kandi bugahura n'ibyo abakiriya bakeneye kugira ngo babone ubuziranenge n'igihe cyo kubitanga. Nyuma yo kuhagera, abakiriya bashobora kubona ubufasha busesuye bwa tekiniki na serivisi nyuma yo kugurisha kugira ngo barebe ko ibicuruzwa bikoreshwa neza.