Ubushakashatsi ku musaruro wa Silikoni Carbide SiC Wafers 2 santimetero 50.8 na 50.8mm hamwe n'ubwoko bwa Dummy grade

Ibikoresho byo munsi y'ubutaka: 4H silicon carbide (4H-SiC)

Imiterere ya kristu: tetraheksaderi (4H)

Gukoresha imiti igabanya ubukana bw'ibiyobyabwenge: Nta miti ikoreshwa (4H-N)

Ingano: santimetero 2

Ubwoko bw'imikorere y'amashanyarazi: Ubwoko bwa N (n-doped)

Ubushobozi bwo gutwara: Semiconductor

Ishusho y'Isoko: Udupira twa SiC twa 4H-N tudakozwe mu buryo bwa dope dufite ibyiza byinshi, nko gutwara ubushyuhe bwinshi, gutakaza umuvuduko muke, kudahinduka cyane mu bushyuhe, no kudahungabana mu buryo bwa mekanike, bityo tukaba dufite icyerekezo cyagutse ku isoko mu bijyanye n'amashanyarazi n'ikoreshwa rya RF. Hamwe n'iterambere ry'ingufu zisubira, imodoka zikoresha amashanyarazi n'itumanaho, hari kwiyongera gukenerwa kw'ibikoresho bifite imikorere myiza, imikorere y'ubushyuhe bwinshi n'imbaraga zihanganira imbaraga nyinshi, ibi bitanga amahirwe menshi ku isoko rya 4H-N tudakozwe mu buryo bwa dope.

Ikoreshwa: Udupira twa SiC twa santimetero 2 twa 4H-N tudakozwemo dope dushobora gukoreshwa mu gukora ibikoresho bitandukanye by'ikoranabuhanga n'ibikoresho bya RF, harimo ariko ntibigarukira kuri ibi:

1--4H-SiC MOSFETs: Transistors za metal oxide semiconductor field effect transistors zikoreshwa mu bushyuhe bwinshi/imbaraga nyinshi. Ibi bikoresho bifite igihombo gito mu gutwara no guhinduranya ibikoresho kugira ngo bitange imikorere myiza kandi byizerwa.

2--4H-SiC JFETs: Junction FETs zo gukoresha amplifier y'amashanyarazi ya RF no guhinduranya. Ibi bikoresho bitanga imikorere yo hejuru kandi bitanga ubushyuhe bwinshi.

Diode za 3--4H-SiC Schottky: Diode zikoreshwa mu gukoresha ingufu nyinshi, ubushyuhe bwinshi, n'umuvuduko mwinshi. Ibi bikoresho bitanga imikorere myiza cyane hamwe n'igihombo gito cyo kuyobora no guhinduranya.

Ibikoresho bya Optoelectronic bya 4--4H-SiC: Ibikoresho bikoreshwa mu bice nka diode za laser zifite imbaraga nyinshi, ibyuma bipima UV na optoelectronic integrated circuits. Ibi bikoresho bifite imbaraga nyinshi n'imiterere ya frequency.

Muri make, wafer za SiC za santimetero 2 za 4H-N zidafite dope zifite ubushobozi bwo gukoreshwa mu buryo butandukanye, cyane cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu na RF. Imikorere yazo ihebuje no kudahindagurika mu bushyuhe bwinshi bituma ziba ingenzi cyane mu gusimbuza ibikoresho bisanzwe bya silikoni mu bikoresho bikoresha ingufu nyinshi, ubushyuhe bwinshi n'imbaraga nyinshi.