3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-ituka SiC wafers

Ibisobanuro bigufi:

Ubwiza bwo hejuru bwa kirisiti ya SiC wafer (Silicon Carbide) mubikorwa bya elegitoroniki na optoelectronic inganda.3inch SiC wafer ni igisekuru kizaza ibikoresho bya semiconductor, igice cya kabiri cya silicon-karbide ya wafer ya diametero 3.Wafer igenewe guhimba ingufu, RF nibikoresho bya optoelectronics.

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Ibisobanuro

3-santimetero 4H igice cya insuline ya SiC (silicon carbide) substrate wafer ni ibikoresho bikoreshwa cyane.4H yerekana tetrahexahedral imiterere ya kristu.Semi-insulation isobanura ko substrate ifite ibiranga imbaraga zo guhangana kandi irashobora gutandukana muburyo butemba.

Ibikoresho nkibi bya substrate bifite ibiranga ibi bikurikira: ubushyuhe bwinshi bwumuriro, gutakaza umuvuduko muke, kwihanganira ubushyuhe bwo hejuru cyane, hamwe nubukanishi bwiza bwimiti.Kubera ko karbide ya silicon ifite icyuho kinini kandi ishobora kwihanganira ubushyuhe bwo hejuru hamwe nubushyuhe bwo hejuru bwumuriro w'amashanyarazi, waferi ya 4H-SiC ikoreshwa mu bikoresho bya elegitoroniki ndetse n’ibikoresho bya radiyo (RF).

Porogaramu nyamukuru ya 4H-SiC igice cya kabiri cya wafers kirimo:

1 - Amashanyarazi ya elegitoronike: Wafers ya 4H-SiC irashobora gukoreshwa mugukora ibikoresho byo guhinduranya amashanyarazi nka MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Irembo rya Bipolar Transistors) hamwe na diode ya Schottky.Ibi bikoresho bifite umuvuduko muke no guhinduranya igihombo mumashanyarazi menshi hamwe nubushyuhe bwo hejuru kandi bitanga imikorere myiza kandi yizewe.

2 - Ibikoresho bya Radio Frequency (RF): Wafer ya 4H-SiC irashobora gukoreshwa muguhimba ingufu nyinshi, ibyuma byongera ingufu za RF byongera ingufu, ibyuma birwanya chip, akayunguruzo, nibindi bikoresho.Carbide ya Silicon ifite imikorere myiza yumurongo mwinshi hamwe nubushyuhe bwumuriro bitewe nigipimo kinini cya elegitoronike yuzuye hamwe nubushyuhe bwo hejuru.

3 - Ibikoresho bya Optoelectronic: 4H-SiC ya wafer ya kabiri irashobora gukoreshwa mugukora ingufu za laser diode zifite ingufu nyinshi, ibyuma byerekana urumuri rwa UV hamwe na sisitemu ya optoelectronic.

Ku bijyanye n’icyerekezo cy’isoko, icyifuzo cya 4H-SiC igice cya kabiri cyiziritse cyiyongera hamwe n’imirima ikura y’amashanyarazi, RF na optoelectronics.Ibi biterwa nuko karbide ya silicon ifite uburyo bwinshi bwo gukoresha, harimo gukoresha ingufu, ibinyabiziga byamashanyarazi, ingufu zishobora kuvugururwa n’itumanaho.Mu bihe biri imbere, isoko rya 4H-SiC ya wafers ya insulaire ikomeje gutanga icyizere kandi biteganijwe ko izasimbuza ibikoresho bya silikoni bisanzwe mubisabwa bitandukanye.