4H-N 8 santimetero SiC substrate wafer Silicon Carbide Dummy Ubushakashatsi bwo mucyiciro cya 500um

4H-N 8 cm SiC substrate wafer Silicon Carbide Dummy Ubushakashatsi urwego 500um ubugari Bwerekanwe

Ibisobanuro bigufi:

Wafer ya silicon karbide ikoreshwa mubikoresho bya elegitoronike nka diode yingufu, MOSFETs, ibikoresho bya microwave ifite ingufu nyinshi, hamwe na transistor ya RF, bigafasha guhindura ingufu no gucunga ingufu. SiC wafers hamwe na substrate isanga kandi ikoreshwa mubikoresho bya elegitoroniki, sisitemu zo mu kirere, hamwe n’ikoranabuhanga rishobora kongera ingufu.

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Ibicuruzwa birambuye

Ibicuruzwa

Nigute Uhitamo Silicon Carbide Wafers & SiC Substrates?

Iyo uhisemo silicon karbide (SiC) wafer na substrate, hari ibintu byinshi ugomba gusuzuma. Dore bimwe mu bipimo byingenzi:

Ubwoko bwibikoresho: Menya ubwoko bwibikoresho bya SiC bikwiranye na progaramu yawe, nka 4H-SiC cyangwa 6H-SiC. Imiterere ikoreshwa cyane ya kristu ni 4H-SiC.

Ubwoko bwa Doping: Hitamo niba ukeneye insimburangingo ya SiC idakabije. Ubwoko bwa doping busanzwe ni N-ubwoko (n-doped) cyangwa P-ubwoko (p-doped), bitewe nibisabwa byihariye.

Ubwiza bwa Crystal: Suzuma ubuziranenge bwa kirisiti ya wafers cyangwa insimburangingo. Ubwiza bwifuzwa bugenwa nibipimo nkumubare winenge, icyerekezo cya kristu, hamwe nubuso bukabije.

Diameter ya Wafer: Hitamo ingano ya wafer ikurikije porogaramu yawe. Ingano isanzwe irimo santimetero 2, santimetero 3, santimetero 4, na 6. Ninini ya diameter, niko umusaruro ushobora kubona kuri wafer.

Umubyimba: Reba ubunini bwifuzwa bwa waC wafers cyangwa substrate. Ubusanzwe ubunini bwamahitamo buva kuri micrometero nkeya kugeza kuri micrometero magana.

Icyerekezo: Menya icyerekezo cya kristu yerekana ibyo usabwa. Icyerekezo rusange kirimo (0001) kuri 4H-SiC na (0001) cyangwa (0001̅) kuri 6H-SiC.

Kurangiza Ubuso: Suzuma hejuru yubuso bwa waC wafers cyangwa substrate. Ubuso bugomba kuba bworoshye, busukuye, kandi butarangwamo ibishushanyo cyangwa umwanda.

Abatanga ibyamamare: Hitamo isoko ryiza kandi rifite uburambe mugukora ibicuruzwa byiza bya SiC byujuje ubuziranenge. Reba ibintu nkubushobozi bwo gukora, kugenzura ubuziranenge, no gusuzuma abakiriya.

Igiciro: Reba ingaruka zijyanye nigiciro, harimo igiciro kuri wafer cyangwa substrate hamwe nandi mafaranga yakoreshejwe.

Ni ngombwa gusuzuma witonze ibyo bintu no kugisha inama impuguke mu nganda cyangwa abatanga ibicuruzwa kugirango umenye neza ko waC wafers hamwe na substrate byujuje ibyangombwa bisabwa.