4H-N 8 santimetero SiC substrate wafer Silicon Carbide Dummy Research grade 500um ubugari

4H-N 8 santimetero SiC substrate wafer Silicon Carbide Dummy Research grade 500um uburebure Ishusho yagaragaye

Ibisobanuro bigufi:

Wafer za silicon carbide zikoreshwa mu bikoresho by'ikoranabuhanga nka diode z'amashanyarazi, MOSFET, ibikoresho bya microwave bifite ingufu nyinshi, na transistors za RF, bigatuma habaho guhindura ingufu neza no gucunga neza ingufu. Wafer za SiC na substrates nazo zikoreshwa mu bikoresho by'ikoranabuhanga by'imodoka, sisitemu z'indege, n'ikoranabuhanga ry'ingufu zishobora kuvugururwa.

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Ibiranga

Ni gute wahitamo Silicon Carbide Wafers na SiC Substrates?

Mu guhitamo wafers za silicon carbide (SiC) na substrates, hari ibintu byinshi ugomba gusuzuma. Dore bimwe mu bintu by'ingenzi:

Ubwoko bw'ibikoresho: Menya ubwoko bw'ibikoresho bya SiC bihuye n'ibyo ukoresha, nka 4H-SiC cyangwa 6H-SiC. Imiterere ya kristalo ikoreshwa cyane ni 4H-SiC.

Ubwoko bwa Doping: Hitamo niba ukeneye substrate ya SiC ya doping cyangwa idafunguye. Ubwoko busanzwe bwa doping ni N-type (n-doped) cyangwa P-type (p-doped), bitewe n'ibyo ukeneye byihariye.

Ubwiza bwa Crystal: Suzuma ubwiza bwa crystal ya SiC wafers cyangwa substrates. Ubwiza bwifuzwa bugenwa n'ibipimo nko umubare w'ibitagenda neza, icyerekezo cya crystallographic, n'ubugari bw'ubuso.

Umurambararo wa Wafer: Hitamo ingano ikwiye ya wafer ukurikije uko wabishyizeho. Ingano zisanzwe zirimo santimetero 2, santimetero 3, santimetero 4, na santimetero 6. Uko umurambararo uba munini, niko ubona umusaruro mwinshi kuri wafer.

Ubunini: Tekereza ubunini wifuza bwa wafers za SiC cyangwa substrates. Ubunini busanzwe buri hagati ya mikorometero nke na mikorometero amagana.

Icyerekezo: Menya icyerekezo cya kristalografiya gihuye n'ibyo porogaramu yawe isaba. Icyerekezo gisanzwe kirimo (0001) kuri 4H-SiC na (0001) cyangwa (0001̅) kuri 6H-SiC.

Gusoza: Suzuma uko ubuso bw'udupira twa SiC cyangwa substrates bumeze. Ubuso bugomba kuba bworoshye, busekuye, kandi budafite iminkanyari cyangwa umwanda.

Izina ry'umutanga: Hitamo umutanga w'umuhanga ufite uburambe bwinshi mu gukora wafers na substrates za SiC nziza. Tekereza ku bintu nk'ubushobozi bwo gukora, kugenzura ubuziranenge, n'isuzuma ry'abakiriya.

Ikiguzi: Tekereza ingaruka ku kiguzi, harimo igiciro kuri buri wafer cyangwa substrate hamwe n'ibindi bikoresho by'inyongera byo guhindura ibintu.

Ni ngombwa gusuzuma neza ibi bintu no kugisha inama impuguke mu nganda cyangwa abatanga ibikoresho kugira ngo urebe neza ko wafers na substrates byatoranijwe bya SiC byujuje ibisabwa mu gukoresha.