8inch 200mm Silicon Carbide SiC Wafers 4H-N ubwoko bwumusaruro urwego 500um

8inch 200mm Silicon Carbide SiC Wafers 4H-N Ubwoko Umusaruro urwego 500um ubugari Bwerekanwe

Ibisobanuro bigufi:

Shanghai Xinkehui Tech.Co, Ltd itanga amahitamo meza hamwe nigiciro cyiza cya silicon karbide ya wafers yo mu rwego rwo hejuru hamwe na substrate zigera kuri 8inch diametre hamwe nubwoko bwa N- na kimwe cya kabiri.Isosiyete ntoya nini nini ya semiconductor yamashanyarazi hamwe na laboratoire yubushakashatsi kwisi yose ikoresha kandi yishingikiriza kuri silicone carbide wafers.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

200mm 8inch SiC Substrate Ibisobanuro

Ingano: 8inch;

Diameter: 200mm ± 0.2;

Umubyimba: 500um ± 25;

Icyerekezo cy'ubuso: 4 yerekeza kuri [11-20] ± 0.5 °;

Icyerekezo cyerekana: [1-100] ± 1 ° ；

Uburebure bwimbitse: 1 ± 0.25mm ；

Micropipe: <1cm2;

Isahani ya Hex: Nta na kimwe cyemewe;

Kurwanya: 0.015 ~ 0.028Ω;

EPD: <8000cm2;

TED: <6000cm2

BPD: <2000cm2

TSD: <1000cm2

SF: agace <1%

TTV≤15um ；

Warp≤40um ；

Bow≤25um ；

Agace ka poly: ≤5%;

Igishushanyo: <5 n'uburebure bwa Cumulative <1 Diameter ya Wafer;

Chips / Yerekana: Ntanumwe wemera D> 0.5mm Ubugari n'ubujyakuzimu;

Ibice: Nta;

Ikirangantego: Ntayo

Inkombe ya Wafer: Chamfer;

Kurangiza Ubuso: Kabiri Uruhande Igipolonye, Si Isura CMP;

Gupakira: Cassette ya Multi-Wafer Cyangwa Igikoresho kimwe cya Wafer;

Ingorane zubu mugutegura 200mm 4H-SiC kristal ya mainl

1) Gutegura ubuziranenge bwo hejuru bwa 200mm 4H-SiC;

2) Ingano nini yubushyuhe umurima udahuje hamwe no kugenzura inzira ya nucleation;

3) Ubwikorezi bwubwikorezi nihindagurika ryibintu bya gaze muri sisitemu nini yo gukura kwa kristu;

4) Kumenagura kristu no gukwirakwiza inenge biterwa nubunini bunini bwumuriro wiyongera.

Kugira ngo dutsinde izo mbogamizi kandi tubone ubuziranenge bwa 200mm SiC waferssolutions:

Kubijyanye no gutegura imbuto ya 200mm ya kirisiti, umurima ukwiye wumurima wumurima, hamwe no kwagura inteko byizwe kandi bigenewe gufata ubuziranenge bwa kristu no kwagura ubunini;Uhereye kuri 150mm SiC se: d kristu, kora imbuto ya kristu itera kugirango igure buhoro buhoro kristu ya SiC kugeza igeze kuri 200mm;Binyuze mu mikurire myinshi ya kristu hamwe na processiig, buhoro buhoro uhindure ubuziranenge bwa kristu mugace kagutse, kandi utezimbere ubwiza bwa 200mm ya kristu.

Kubijyanye na 200mm itwara kristu hamwe nogutegura substrate, ubushakashatsi bwateje imbere ubushyuhe bwimiterere nubuso bwumurima wubunini bunini bwa kristalgrowth, bukora imikurire ya 200mm ya SiC ya kirisiti, no kugenzura uburinganire bwa doping.Nyuma yo gutunganya neza no gushushanya kristu, habonetse ing-8 ya inchelectricaly 4H-SiC ingot ifite diameter isanzwe.Nyuma yo gukata, gusya, gusya, gutunganya kugirango ubone SiC 200mm wafers hamwe nubunini bwa 525um cyangwa