4H / 6H-P 6inch SiC wafer Zero MPD Icyiciro cy'umusaruro Icyiciro cya Dummy

4H / 6H-P 6inch SiC wafer Zero MPD amanota Yumusaruro Icyiciro Dummy Icyiciro Cyerekanwe

Ibisobanuro bigufi:

Ubwoko bwa 4H / 6H-P bwa santimetero 6 za SiC wafer ni ibikoresho bya semiconductor bikoreshwa mu gukora ibikoresho bya elegitoroniki, bizwiho kuba bitwara neza cyane, ubushyuhe bukabije, hamwe no kurwanya ubushyuhe bwinshi no kwangirika. Urwego-rwo gukora na Zeru MPD (Micro Pipe Defect) urwego rwemeza kwizerwa no gutekana mumashanyarazi akomeye. Umusaruro wo mu rwego rwo hejuru ukoreshwa mugukora ibikoresho binini binini hamwe no kugenzura ubuziranenge bukomeye, mugihe waferi yo mu rwego rwa dummy ikoreshwa cyane cyane mugukemura ibibazo no gupima ibikoresho. Ibintu byingenzi bya SiC bituma ikoreshwa cyane mubushyuhe bwo hejuru, voltage nyinshi, hamwe nibikoresho bya elegitoroniki byihuta, nkibikoresho byamashanyarazi nibikoresho bya RF.

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Ibicuruzwa birambuye

Ibicuruzwa

4H / 6H-P Ubwoko bwa SiC Igizwe na Substrates Imbonerahamwe isanzwe

6 santimetero ya diametre Silicon Carbide (SiC) Substrate Ibisobanuro

Icyiciro			Umusaruro wa MPD ZeruIcyiciro (Z. Icyiciro)	Umusaruro usanzweIcyiciro (P. Icyiciro)	Dummy Grade (D Icyiciro)
Diameter			145.5 mm ~ 150.0 mm
Umubyimba			350 mm ± 25 mm
Icyerekezo cya Wafer			-Offumurongo: 2.0 ° -4.0 ° werekeza kuri [1120] ± 0.5 ° kuri 4H / 6H-P, Ku murongo: 〈111〉 ± 0.5 ° kuri 3C-N
Ubucucike bwa Micropipe			0 cm-2
Kurwanya	p-ubwoko bwa 4H / 6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ubwoko bwa 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Icyerekezo Cyibanze		4H / 6H-P	-1010} ± 5.0 °
		3C-N	-{110} ± 5.0 °
Uburebure bwibanze			32,5 mm ± 2,2 mm
Uburebure bwa kabiri			18.0 mm ± 2,2 mm
Icyerekezo cya kabiri cya Flat			Silicon ireba hejuru: 90 ° CW. kuva hasi ya mbere ± 5.0 °
Guhezwa			Mm 3		Mm 6
LTV / TTV / Umuheto / Intambara			≤2.5 μ m / ≤5 μ m / ≤15 μ m / ≤30 mm		≤10 μ m / ≤15 μ m / ≤25 μ m / ≤40 mm
Ubugome			Igipolonye Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi			Nta na kimwe		Uburebure bwa mm 10 mm, uburebure bumwe mm2 mm
Isahani ya Hex Kumucyo mwinshi			Agace kegeranye ≤0.05%		Agace kegeranye ≤0.1%
Uturere twa Polytype Kumucyo mwinshi			Nta na kimwe		Agace kegeranye ≤3%
Amashusho ya Carbone			Agace kegeranye ≤0.05%		Agace kegeranye ≤3%
Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo			Nta na kimwe		Uburebure bwuzuye≤1 × wafer diameter
Imipira yo ku mpande hejuru yumucyo mwinshi			Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure		5 byemewe, mm1 mm imwe imwe
Ubuso bwa Silicon Yanduye Kubwinshi			Nta na kimwe
Gupakira			Multi-wafer Cassette cyangwa Igikoresho kimwe cya Wafer

Inyandiko:

Limits Imipaka ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. # Igishushanyo kigomba kugenzurwa kuri Si face o

Ubwoko bwa 4H / 6H-P bwa 6-santimetero ya SiC wafer hamwe na Zero MPD amanota kandi umusaruro cyangwa dummy urwego rukoreshwa cyane mubikoresho bya elegitoroniki bigezweho. Ubwiza buhebuje bwumuriro, imbaraga zo kumeneka cyane, hamwe no kurwanya ibidukikije bikaze bituma biba byiza kuri electronics power, nka voltage nini na inverter. Urwego MPD ya Zeru itanga inenge nkeya, ingenzi kubikoresho byizewe cyane. Umusaruro wo mu rwego rwa waferi ukoreshwa mubikorwa binini byo gukora ibikoresho byamashanyarazi hamwe na RF, aho imikorere nibisobanuro ari ngombwa. Ku rundi ruhande, waferi yo mu rwego rwa Dummy, ikoreshwa muguhindura gahunda, kugerageza ibikoresho, hamwe na prototyping, bigafasha kugenzura ubuziranenge buhoraho mubicuruzwa bitanga umusaruro.

Ibyiza bya N-bwoko bwa SiC igizwe na substrate zirimo

Ubushyuhe bwo hejuru: Wafer ya 4H / 6H-P SiC ikwirakwiza neza ubushyuhe, bigatuma ikwiranye nubushyuhe bwo hejuru hamwe nimbaraga zikoresha ibikoresho bya elegitoroniki.
Umuvuduko mwinshi wo kumeneka: Ubushobozi bwayo bwo gukoresha voltage ndende nta gutsindwa bituma biba byiza kuri electronics power na voltage ihinduranya porogaramu.
Zero MPD (Micro Pipe Defect) Icyiciro: Ubucucike buke butuma kwizerwa no gukora cyane, bikenewe kubikoresho bya elegitoroniki.
Umusaruro-Urwego rwo Gukora Misa: Birakwiriye kubyara umusaruro munini wibikoresho byifashishwa bya semiconductor hamwe nubuziranenge bukomeye.
Dummy-Grade yo Kwipimisha no Guhindura: Gushoboza uburyo bwiza bwo gukora, kugerageza ibikoresho, hamwe na prototyping udakoresheje ibicuruzwa bihenze cyane.

Muri rusange, 4H / 6H-P ya santimetero 6 za SiC wafers hamwe na Zero MPD ya Zero, icyiciro cy’umusaruro, hamwe na dummy urwego rutanga inyungu zikomeye zo guteza imbere ibikoresho bya elegitoroniki bikora cyane. Iyi wafer ifite akamaro kanini mubisabwa bisaba gukora ubushyuhe bwo hejuru, ingufu nyinshi, hamwe no guhindura imbaraga. Urwego rwa Zeru MPD rutanga inenge nkeya kubikorwa byizewe kandi bihamye, mugihe waferi yo mu rwego rwo hejuru ishyigikira inganda nini nini igenzura ubuziranenge. Wafers yo mu rwego rwa Dummy itanga igisubizo cyigiciro cyogutezimbere uburyo bwogutezimbere hamwe nibikoresho bya kalibrasi, bigatuma biba ngombwa muguhimba semiconductor yuzuye neza.