Wafer ya P-type SiC 4H/6H-P 3C-N ifite ubugari bwa santimetero 6 na 350 μm ifite icyerekezo cy'ibanze
Ibisobanuro4H/6H-P Ubwoko SiC Composite Substrates Imbonerahamwe isanzwe y'ibipimo
6 Isntimetero 100 z'umurambararo wa Silicon Carbide (SiC) Substrate Ibisobanuro
| Icyiciro | Nta musaruro wa MPDIcyiciro (Z) Icyiciro) | Umusaruro UsanzweIcyiciro (P) Icyiciro) | Impamyabumenyi y'ikinyoma (D Icyiciro) | ||
| Ingano | 145.5 mm ~ 150.0 mm | ||||
| Ubunini | 350 μm ± 25 μm | ||||
| Icyerekezo cya Wafer | -OffUmurongo: 2.0°-4.0°ugana [1120] ± 0.5° kuri 4H/6H-P, Kuri umurongo:〈111〉± 0.5° kuri 3C-N | ||||
| Ubucucike bw'imiyoboro mito | 0 cm-2 | ||||
| Ubushobozi bwo kwirinda | ubwoko bwa p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| ubwoko bwa n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Icyerekezo cy'ibanze cy'ubugari | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Uburebure bw'ibanze bw'ikiraro | mm 32.5 ± mm 2.0 | ||||
| Uburebure bwa kabiri bw'ikiraro | 18.0 mm ± 2.0 mm | ||||
| Icyerekezo cya kabiri cy'icyitegererezo | Silicon ireba hejuru: 90° CW. uvuye kuri Prime flat ± 5.0° | ||||
| Kutagaragaza Edge | mm 3 | mm 6 | |||
| LTV/TTV/Umuheto /Umupfundo | ≤2.5 μ m / ≤5 μ m / ≤15 μ m / ≤30 mm | ≤10 μ m / ≤15 μ m / ≤25 μ m / ≤40 mm | |||
| Ubukana | Igiporuniya Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Imyanya y'inkombe iterwa n'urumuri rwinshi | Nta na kimwe | Uburebure buhuriweho ≤ mm 10, uburebure bumwe ≤ mm 2 | |||
| Amasahani ya Hex ashingiye ku rumuri rwinshi | Agace k'ikusanyirizo ≤0.05% | Agace k'ikusanyirizo ≤0.1% | |||
| Uduce twa Polytype dukoresheje urumuri rwinshi | Nta na kimwe | Agace k'ikusanyirizo ≤3% | |||
| Ibikubiye muri karuboni igaragara | Agace k'ikusanyirizo ≤0.05% | Agace k'ikusanyirizo ≤3% | |||
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | Nta na kimwe | Uburebure buhuriweho ≤1 × umurambararo wa wafer | |||
| Umucyo w'ubushyuhe bwinshi n'ubukana | Nta na kimwe cyemewe gifite ubugari n'ubujyakuzimu bwa ≥0.2mm | 5 byemewe, ≤1 mm buri kimwe | |||
| Kwanduzwa n'ubuso bwa silicon bitewe n'ubukana bwinshi | Nta na kimwe | ||||
| Gupfunyika | Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari | ||||
Inyandiko:
※ Imipaka y'ubusembwa ikoreshwa ku buso bwose bwa wafer uretse aho inkombe zishyiramo. # Imivuno igomba kugenzurwa ku buso bwa Si o
Wafer ya P-type SiC, 4H/6H-P 3C-N, ifite ingano ya santimetero 6 n'ubugari bwa μm 350, igira uruhare runini mu gukora ibikoresho by'ikoranabuhanga bikoresha ingufu nyinshi. Uburyo bwayo bwiza bwo gutwara ubushyuhe n'amashanyarazi menshi bituma iba nziza cyane mu gukora ibikoresho nk'amashanyarazi, diode, na transistors bikoreshwa mu bushyuhe bwinshi nko mu modoka zikoresha amashanyarazi, imiyoboro y'amashanyarazi, na sisitemu z'ingufu zishobora kongera gukoreshwa. Ubushobozi bw'iyi wafer bwo gukora neza mu bihe bikomeye butuma ikora neza mu nganda zisaba imbaraga nyinshi n'ubushobozi bw'ingufu. Byongeye kandi, icyerekezo cyayo cy'ibanze gifasha mu guhuza neza mu gihe cyo gukora ibikoresho, kongera ubushobozi bw'umusaruro no guhuza ibicuruzwa.
Ibyiza by'ibice bya N-type SiC bivanze birimo
- Ubushobozi bwo gutwara ubushyuhe bwinshi: Wafer za SiC zo mu bwoko bwa P zikuraho ubushyuhe neza, bigatuma ziba nziza cyane mu kuzikoresha mu bushyuhe bwinshi.
- Umuvuduko mwinshi w'amashanyarazi: Ishobora kwihanganira voltage nyinshi, ikerekana ko ikoranabuhanga rikoresha ingufu nyinshi n'ibikoresho bifite voltage nyinshi ari ingirakamaro.
- Kurwanya ibidukikije bibi: Iramba neza cyane mu bihe bikomeye, nko mu bushyuhe bwinshi no mu bidukikije byangiza.
- Guhindura Ingufu mu buryo Bunoze: Uburyo bwo gukoresha P-type butuma amashanyarazi akoreshwa neza, bigatuma wafer ikoreshwa neza mu guhindura ingufu.
- Icyerekezo cy'ibanze cy'ubugari: Igenzura neza uburyo ibikoresho bihuzwa mu gihe cyo kubitunganya, inoza imiterere y'ibikoresho no kubikoresha neza.
- Imiterere y'umubyimba muto (350 μm): Ubunini bwiza bwa wafer bufasha kwinjizwa mu bikoresho by'ikoranabuhanga bigezweho kandi bifite umwanya muto.
Muri rusange, wafer ya P-type SiC, 4H/6H-P 3C-N, itanga ibyiza byinshi bituma ikoreshwa cyane mu nganda no mu by'ikoranabuhanga. Ingufu zayo zitwara ubushyuhe bwinshi n'amashanyarazi ahindagurika bituma ikora neza mu bidukikije birimo ubushyuhe bwinshi n'amashanyarazi menshi, mu gihe guhangana kwayo n'ikirere kibi bituma iramba. Gukoresha P-type doping bituma ihinduka neza, bigatuma iba nziza ku bikoresho by'ikoranabuhanga n'ingufu. Byongeye kandi, icyerekezo cy'ibanze cya wafer gitanga uburyo bwo guhuza neza mu gihe cyo kuyikora, bikongera imiterere y'umusaruro. Ifite ubugari bwa 350 μm, ikwiriye cyane guhuzwa n'ibikoresho bigezweho kandi bito.
Ishusho irambuye
