SiC substrate P-type 4H/6H-P 3C-N 4inch withe ubugari bwa 350um grade grade Dummy grade
Imbonerahamwe y'ibipimo bya 4inch SiC substrate P-type 4H/6H-P 3C-N
4 Silikoni y'umurambararo wa santimeteroKarubide (SiC) Substrate Ibisobanuro
| Icyiciro | Nta musaruro wa MPD Icyiciro (Z) Icyiciro) | Umusaruro Usanzwe Icyiciro (P) Icyiciro) | Impamyabumenyi y'ikinyoma (D Icyiciro) | ||
| Ingano | 99.5 mm ~ 100.0 mm | ||||
| Ubunini | 350 μm ± 25 μm | ||||
| Icyerekezo cya Wafer | Umurongo utari hagati: 2.0°-4.0° werekeza [11]20] ± 0.5° kuri 4H/6H-P, Oumurongo wa n:〈111〉± 0.5° kuri 3C-N | ||||
| Ubucucike bw'imiyoboro mito | 0 cm-2 | ||||
| Ubushobozi bwo kwirinda | ubwoko bwa p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| ubwoko bwa n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Icyerekezo cy'ibanze cy'ubugari | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Uburebure bw'ibanze bw'ikiraro | mm 32.5 ± mm 2.0 | ||||
| Uburebure bwa kabiri bw'ikiraro | 18.0 mm ± 2.0 mm | ||||
| Icyerekezo cya kabiri cy'icyitegererezo | Silicon ireba hejuru: 90° CW. uvuye kuri Prime flat±5.0° | ||||
| Kutagaragaza Edge | mm 3 | mm 6 | |||
| LTV/TTV/Umuheto /Umupfundo | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Ubukana | Igiporuniya Ra≤1 nm | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Imyanya y'inkombe iterwa n'urumuri rwinshi | Nta na kimwe | Uburebure buhuriweho ≤ mm 10, uburebure bumwe ≤ mm 2 | |||
| Amasahani ya Hex ashingiye ku rumuri rwinshi | Agace k'ikusanyirizo ≤0.05% | Agace k'ikusanyirizo ≤0.1% | |||
| Uduce twa Polytype dukoresheje urumuri rwinshi | Nta na kimwe | Agace k'ikusanyirizo ≤3% | |||
| Ibikubiye muri karuboni igaragara | Agace k'ikusanyirizo ≤0.05% | Agace k'ikusanyirizo ≤3% | |||
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | Nta na kimwe | Uburebure buhuriweho ≤1 × umurambararo wa wafer | |||
| Umucyo w'ubushyuhe bwinshi n'ubukana | Nta na kimwe cyemewe gifite ubugari n'ubujyakuzimu bwa ≥0.2mm | 5 byemewe, ≤1 mm buri kimwe | |||
| Kwanduzwa n'ubuso bwa silicon bitewe n'ubukana bwinshi | Nta na kimwe | ||||
| Gupfunyika | Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari | ||||
Inyandiko:
※Imipaka y'ubusembwa ikoreshwa ku buso bwose bwa wafer uretse ahantu hadakoreshejwe inkombe. # Imivuno igomba kugenzurwa ku buso bwa Si gusa.
Substrate ya P-type 4H/6H-P 3C-N SiC ya santimetero 4 ifite ubugari bwa 350 μm ikoreshwa cyane mu nganda zigezweho z'ikoranabuhanga n'ingufu. Ifite ubushobozi bwo gutwara ubushyuhe bwinshi, ingufu nyinshi zo kwangirika, kandi irwanya cyane ibidukikije bikomeye, iyi substrate ni nziza cyane ku bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi nka switch zifite ingufu nyinshi, inverters, n'ibikoresho bya RF. Substrate zikoreshwa mu nganda nini, zituma ibikoresho bikora neza kandi neza, ibi bikaba ari ingenzi cyane ku bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi no gukoresha inshuro nyinshi. Substrate zikoreshwa mu buryo bwa dummy-grade, ku rundi ruhande, zikoreshwa cyane cyane mu gupima imikorere, gupima ibikoresho, no guteza imbere prototype, bifasha mu kugenzura ubuziranenge no guhuza imikorere mu gukora semiconductor.
IbisobanuroIbyiza bya substrates za N-type SiC zigizwe na
- Ubushobozi bwo gutwara ubushyuhe bwinshi: Gukoresha ubushyuhe neza bituma substrate iba nziza cyane mu gukoresha ubushyuhe bwinshi n'imbaraga nyinshi.
- Umuvuduko mwinshi w'amashanyarazi: Ishyigikira imikorere ya voltage nyinshi, igenzura ko ibikoresho by'ikoranabuhanga n'ibikoresho bya RF byizerwa.
- Kurwanya ibidukikije bibi: Iramba mu bihe bikomeye cyane nko mu bushyuhe bwinshi n'ahantu hangirika, bigatuma ikora neza igihe kirekire.
- Uburyo bwo gukora neza mu rwego rw'umusaruro: Itanga umusaruro mwiza kandi wizewe mu nganda nini, ikwiriye ingufu zigezweho na porogaramu za RF.
- Isuzuma ry'impimbano ry'icyitegererezo: Ifasha mu gupima neza inzira, gupima ibikoresho, no gukora ibishushanyo mbonera bitabangamiye uburyo bwo gukora wafers.
Muri rusange, substrate ya P-type 4H/6H-P 3C-N ya SiC ya santimetero 4 ifite ubugari bwa 350 μm itanga inyungu zikomeye ku mikoreshereze ya elegitoroniki ikora neza. Ingufu zayo zishyushye cyane hamwe n'amashanyarazi ahindagurika bituma iba nziza ku bidukikije bifite ingufu nyinshi n'ubushyuhe bwinshi, mu gihe guhangana n'ibihe bikomeye bituma iramba kandi yizewe. Substrate ikora neza kandi ihoraho mu gukora ibikoresho binini by'amashanyarazi n'ibikoresho bya RF. Hagati aho, substrate ikora neza ni ingenzi mu gupima imikorere, gupima ibikoresho, no gukora ibishushanyo, bishyigikira kugenzura ubuziranenge no guhuza imikorere ya semiconductor. Ibi bituma substrate za SiC zishobora gukoreshwa mu buryo bugezweho.
Ishusho irambuye
