6 muri Silicon Carbide 4H-SiC Semi-Ihindura Ingot, Icyiciro cya Dummy

6 muri Silicon Carbide 4H-SiC Semi-Ihindura Ingot, Dummy Grade Ikiranga

Ibisobanuro bigufi:

Silicon Carbide (SiC) ihindura inganda za semiconductor, cyane cyane mumashanyarazi menshi, inshuro nyinshi, hamwe nimirasire irwanya imirasire. Ingano ya 6-cm 4H-SiC igice cya insuline, gitangwa mubyiciro bya dummy, nibikoresho byingenzi byo gukora prototyping, ubushakashatsi, hamwe na kalibrasi. Hamwe na bande yagutse, itwara neza yubushyuhe, hamwe nubukanishi bukomeye, iyi ingot ikora nkigiciro cyiza cyo kugerageza no gutezimbere uburyo butabangamiye ubuziranenge bwibanze busabwa kugirango iterambere ryiyongere. Iki gicuruzwa gikoresha porogaramu zitandukanye, zirimo amashanyarazi ya elegitoroniki, ibikoresho bya radiyo-radiyo (RF), hamwe na optoelectronics, bigatuma iba igikoresho ntagereranywa ku nganda n’ibigo by’ubushakashatsi.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

1. Ibyiza byumubiri nuburyo
Type Ubwoko bwibikoresho: Carbide ya Silicon (SiC)
Y Polytype: 4H-SiC, imiterere ya kristu ya mpandeshatu
● Diameter: santimetero 6 (150 mm)
Umubyimba: Kugereranya (5-15 mm bisanzwe kurwego rwa dummy)
Icyerekezo cya Crystal:
o Intangiriro: [0001] (C-indege)
oIcyiciro cya kabiri: Off-axis 4 ° kugirango ikure neza epitaxial
Icyerekezo cyibanze cya Flat: (10-10) ± 5 °
Icyerekezo cya kabiri cya Flat Icyerekezo: 90 ° isaha yo kugana kuva kumirongo ibanza ± 5 °

2. Ibyiza byamashanyarazi
Kurwanya:
oSemi-irinda (> 106 ^ 66 Ω · cm), byiza kugabanya ubushobozi bwa parasitike.
Type Ubwoko bwa Doping:
oKutabigambiriye, bivamo imbaraga nyinshi zo kurwanya amashanyarazi no guhagarara neza mubikorwa bitandukanye.

3. Ibyiza byubushyuhe
Conduc Ubushuhe bw'ubushuhe: 3.5-4.9 W / cm · K, butuma ubushyuhe bukwirakwira muri sisitemu zikomeye.
Co Coefficient yo Kwagura Ubushyuhe: 4.2 × 10−64.2 \ inshuro 10 ^ {- 6} 4.2 × 10−6 / K, byemeza ko umutekano uhagaze mugihe cyo gutunganya ubushyuhe bwinshi.

4. Ibyiza byiza
● Bandgap: Umuyoboro mugari wa 3.26 eV, utuma ukora munsi yumuvuduko mwinshi nubushyuhe.
Gukorera mu mucyo: Ubucucike bukabije kuri UV n'uburebure bugaragara, bifasha mugupima optoelectronic.

5. Ibikoresho bya mashini
● Gukomera: Mohs igipimo cya 9, icya kabiri nyuma ya diyama, ikomeza kuramba mugihe cyo kuyitunganya.
Ens Ubucucike bwuzuye:
o Kugenzura kubintu bike bya macro, byemeza ubuziranenge buhagije bwa dummy-progaramu.
Flatness: Guhuza hamwe no gutandukana

Parameter	Ibisobanuro	Igice
Icyiciro	Dummy Grade
Diameter	150.0 ± 0.5	mm
Icyerekezo cya Wafer	Kuri axis: <0001> ± 0.5 °	impamyabumenyi
Kurwanya amashanyarazi	> 1E5	Ω · cm
Icyerekezo Cyibanze	{10-10} ± 5.0 °	impamyabumenyi
Uburebure bwibanze	Ikimenyetso
Ibice (Kugenzura Umucyo mwinshi)	<3 mm muri radiyo	mm
Isahani ya Hex (Kugenzura Umucyo mwinshi)	Agace kegeranye ≤ 5%	%
Uturere twa Polytype (Kugenzura Umucyo mwinshi)	Agace kegeranye ≤ 10%	%
Ubucucike bwa Micropipe	<50	cm - 2 ^ -2−2
Gukata Impande	3 byemewe, buri ≤ 3 mm	mm
Icyitonderwa	Gukata wafer uburebure <1 mm,> 70% (ukuyemo impera ebyiri) byujuje ibisabwa haruguru

Porogaramu

1. Kwandika no gukora ubushakashatsi
Dummy-urwego rwa 6-inch 4H-SiC ingot nigikoresho cyiza cyo gukora prototyping nubushakashatsi, kwemerera ababikora na laboratoire:
Ibipimo byerekana ibizamini muburyo bwo kubika imyuka (CVD) cyangwa kubitsa kumubiri (PVD).
Gutezimbere no kunonosora uburyo bwo gutema, gusiga, na wafer yo gukata.
Shakisha ibikoresho bishya bishushanya mbere yo kwimura ibikoresho-byo mu rwego rwo hejuru.

2. Kugenzura ibikoresho no kugerageza
Igice cya-insulitingi ituma iyi ingot itagereranywa kuri:
Gusuzuma no guhinduranya imiterere y'amashanyarazi y'ibikoresho bifite ingufu nyinshi kandi byihuta cyane.
Kwigana imikorere yimikorere ya MOSFETs, IGBTs, cyangwa diode mubidukikije.
Gukora nk'igiciro cyiza gisimbuza isuku-isukuye mugihe cyambere cyiterambere.

3. Amashanyarazi
Ubushyuhe bwo hejuru bwumuriro hamwe nubunini bwagutse buranga 4H-SiC butuma imikorere ikora neza muri electronics power, harimo:
Power Amashanyarazi menshi.
Vever Imashini zikoresha amashanyarazi (EV).
Systems Sisitemu y'ingufu zishobora kuvugururwa, nka inverter izuba hamwe na turbine z'umuyaga.

4. Porogaramu ya Radio Frequency (RF)
4H-SiC igihombo gito cya dielectric hamwe na moteri ya elegitoronike ikora neza:
● RF amplifier na transistors mubikorwa remezo byitumanaho.
Sisitemu ya radar yihuta ya sisitemu yo mu kirere no kurinda porogaramu.
Network Ibikoresho bitagira umurongo wa tekinoroji ya 5G igaragara.

5. Imirasire-irwanya ibikoresho
Bitewe nuko irwanya inenge ziterwa nimirasire, igice cya insuline 4H-SiC nibyiza kuri:
Equipment Ibikoresho byo gushakisha mu kirere, harimo ibikoresho bya elegitoroniki na sisitemu y'amashanyarazi.
Ibyuma bya elegitoroniki bikomye kugirango bikurikirane kandi bigenzurwe.
Application Porogaramu zo kwirwanaho zisaba imbaraga mu bidukikije bikabije.

6. Amashanyarazi
Amahitamo ya optique hamwe na bande ya 4H-SiC ituma ikoreshwa muri:
Phot UV ifotora hamwe na LED zifite ingufu nyinshi.
● Kugerageza ibifuniko bya optique hamwe no kuvura hejuru.
● Prototyping optique yibikoresho bya sensor igezweho.

Ibyiza bya Dummy-Grade Ibikoresho

Gukora neza:
Urwego rwa dummy nubundi buryo buhendutse bwubushakashatsi cyangwa ibikoresho-byo mu rwego rwo hejuru, bigatuma biba byiza mugupima bisanzwe no gutunganya neza.

Guhitamo:
Ibipimo byagenwe hamwe na kristu yerekanwe byerekana guhuza hamwe nurwego runini rwa porogaramu.

Ubunini:
Diameter ya santimetero 6 ihuza ibipimo ngenderwaho byinganda, bituma ibipimo bitagira ingano kubikorwa-byo murwego rwo hejuru.

Gukomera:
Imbaraga zubukanishi hamwe nubushyuhe bwumuriro bituma ingot iramba kandi yizewe mubihe bitandukanye byubushakashatsi.

Guhindura:
Birakwiriye inganda nyinshi, kuva sisitemu yingufu kugeza itumanaho na optoelectronics.

Umwanzuro

Imyenda ya santimetero 6 ya Silicon Carbide (4H-SiC) igice cya insulinging ingot, icyiciro cya dummy, itanga urubuga rwizewe kandi runyuranye rwo gukora ubushakashatsi, prototyping, no kugerageza mubice byikoranabuhanga bigezweho. Ibikoresho bidasanzwe byubushyuhe, amashanyarazi, nubukanishi, bifatanije nuburyo buhendutse kandi bwihariye, bituma biba ibikoresho byingirakamaro haba muri za kaminuza ninganda. Kuva kuri electronics power kugeza kuri sisitemu ya RF hamwe nibikoresho bikomeretsa imirasire, iyi ingot ishyigikira udushya muri buri cyiciro cyiterambere.
Kubindi bisobanuro birambuye cyangwa gusaba ibisobanuro, nyamuneka twandikire. Itsinda ryacu rya tekinike ryiteguye gufasha mubisubizo byujuje ibisabwa.