6inch GaN-Kuri-safiro

Ibisobanuro bigufi:

150mm 6inch GaN kuri Silicon / Sapphire / SiC Epi-layer wafer Gallium nitride epitaxial wafer

Wafer ya santimetero 6 ya safiro ni ibikoresho byiza byo mu rwego rwo hejuru bigizwe na nitride ya gallium (GaN) ikura kuri substrate. Ibikoresho bifite ibikoresho byiza byo gutwara ibintu bya elegitoronike kandi nibyiza mugukora ibikoresho byimbaraga nyinshi kandi byihuta cyane.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

150mm 6inch GaN kuri Silicon / Sapphire / SiC Epi-layer wafer Gallium nitride epitaxial wafer

Uburyo bwo gukora: Igikorwa cyo gukora gikubiyemo gukura kwa GaN kumurongo wa safiro ukoresheje tekinoroji igezweho nko kubika ibyuma biva mu bimera (MOCVD) cyangwa epitaxy ya molekulari (MBE). Uburyo bwo kubitsa bukorwa mugihe cyagenzuwe kugirango harebwe ubuziranenge bwa kirisiti hamwe na firime imwe.

6inch GaN-Kuri-safiro: chip-6 ya santimetero ya siphire ikoreshwa cyane mugutumanaho kwa microwave, sisitemu ya radar, tekinoroji idafite na optoelectronics.

Porogaramu zimwe zisanzwe zirimo

1. Rf imbaraga zongera imbaraga

Inganda zimurika

3. Ibikoresho byitumanaho bidafite insinga

4. Ibikoresho bya elegitoronike mubushyuhe bwo hejuru

5. Ibikoresho bya optoelectronic

Ibisobanuro ku bicuruzwa

- Ingano: Diameter ya substrate ni santimetero 6 (hafi mm 150).

- Ubwiza bwubuso: Ubuso bwarakozwe neza kugirango butange ubwiza bwindorerwamo.

- Ubunini: Ubunini bwurwego rwa GaN burashobora gutegurwa ukurikije ibisabwa byihariye.

- Gupakira: Substrate yuzuye neza ibikoresho birwanya anti-static kugirango wirinde kwangirika mugihe cyo gutwara.

- Imyanya yimyanya: Substrate ifite impande zihariye zorohereza guhuza no gukora mugihe cyo gutegura ibikoresho.

- Ibindi bipimo: Ibipimo byihariye nko kunanuka, kurwanya no kwibanda kuri doping birashobora guhinduka ukurikije ibyo abakiriya bakeneye.

Hamwe nibikoresho byabo byiza hamwe nibisabwa bitandukanye, waferi ya santimetero 6 ya safiro ni amahitamo yizewe mugutezimbere ibikoresho bya semiconductor ikora cyane mubikorwa bitandukanye.

Substrate	6 ”1mm <111> p-ubwoko bwa Si	6 ”1mm <111> p-ubwoko bwa Si
Epi Kumari	~ 5um	~ 7um
Epi Kumari	<2%	<2%
Umuheto	+/- 45um	+/- 45um
Kumena	<5mm	<5mm
BV	> 1000V	> 1400V
HEMT Al%	25-35%	25-35%
HEMT ThickAvg	20-30nm	20-30nm
Insitu SiN Cap	5-60nm	5-60nm
2DEG inc.	~ 10¹³cm^-2	~ 10¹³cm^-2
Kugenda	~ 2000cm²/ Vs (<2%)	~ 2000cm²/ Vs (<2%)
Rsh	<330ohm / sq (<2%)	<330ohm / sq (<2%)