GaN-On-Sapphire ya santimetero 6
150mm 6inch GaN kuri Silicon/Sapphire/SiC Epi-layer wafer Gallium nitride epitaxial wafer
Iyi wafer ya santimetero 6 ni ibikoresho bya semiconductor byiza cyane bigizwe n'ibice bya gallium nitride (GaN) bihingwa kuri santimetero. Ibi bikoresho bifite ubushobozi bwiza bwo gutwara ibintu hakoreshejwe ikoranabuhanga kandi ni byiza cyane mu gukora ibikoresho bya semiconductor bifite imbaraga nyinshi kandi bikoresha frequency nyinshi.
Uburyo bwo gukora: Uburyo bwo gukora bukubiyemo gukura ibice bya GaN ku butaka bwa safiro hakoreshejwe tekiniki zigezweho nka metal-organic chemical vapor deposition (MOCVD) cyangwa molekile beam epitaxy (MBE). Uburyo bwo gushyiramo ibintu bikorwa mu buryo bugenzurwa kugira ngo harebwe ko kristale ifite ubuziranenge buri hejuru kandi ko filime imwe.
Porogaramu za GaN-On-Sapphire za santimetero 6: Uduce twa safiro twa santimetero 6 dukoreshwa cyane mu itumanaho rya mikoroonde, sisitemu za radar, ikoranabuhanga ritagira insinga na optoelectronics.
Zimwe mu porogaramu zisanzwe zirimo
1. Amplifier y'ingufu za Rf
2. Inganda zikora amatara ya LED
3. Ibikoresho by'itumanaho ridafite umugozi
4. Ibikoresho by'ikoranabuhanga biri ahantu hashyushye cyane
5. Ibikoresho by'ikoranabuhanga bya optoelectronic
Ibipimo by'ibicuruzwa
- Ingano: Umurambararo w'ubutaka ni santimetero 150 (hafi mm 150).
- Ubwiza bw'ubuso: Ubuso bwaratunganyijwe neza kugira ngo butange indorerwamo nziza cyane.
- Ubunini: Ubunini bw'urwego rwa GaN bushobora guhindurwa hakurikijwe ibisabwa byihariye.
- Gupfunyika: Icyuma gipfunyitse neza ibikoresho birwanya imihindagurikire y'ikirere kugira ngo hirindwe kwangirika mu gihe cyo gutwara.
- Impande zo gushyiramo: Imbuga ifite impande zihariye zo gushyiramo zifasha mu gutunganya no gukora neza mu gihe cyo gutegura igikoresho.
- Izindi parametre: Ibipimo byihariye nko kugabanya ubukana, kugabanya imbaraga no gupima doping bishobora guhindurwa hakurikijwe ibyo umukiriya akeneye.
Bitewe n’imiterere yazo ihebuje y’ibikoresho n’ikoreshwa ryayo ritandukanye, wafers za santimetero 6 za safiro ni amahitamo yizewe mu guteza imbere ibikoresho bya semiconductor bikora neza mu nganda zitandukanye.
| Inzu ntoya | 6” 1mm <111> p-type Si | 6” 1mm <111> p-type Si |
| Epi ThickAvg | ~5um | ~7um |
| Epi ThickUnif | <2% | <2% |
| Umuheto | +/-45um | +/-45um |
| Gucikagurika | <5mm | <5mm |
| BV ihagaze | >1000V | >1400V |
| HEMT Al% | 25-35% | 25-35% |
| HEMT ThickAvg | 20-30nm | 20-30nm |
| Insitu SiN Cap | 5-60nm | 5-60nm |
| 2DEG conc. | ~1013cm-2 | ~1013cm-2 |
| Gutembera | ~ 2000cm2/Vs (<2%) | ~ 2000cm2/Vs (<2%) |
| Rsh | <330ohm/kare (<2%) | <330ohm/kare (<2%) |
Ishusho irambuye
