6inch GaN-Kuri-safiro
150mm 6inch GaN kuri Silicon / Sapphire / SiC Epi-layer wafer Gallium nitride epitaxial wafer
Wafer ya santimetero 6 ya safiro ni ibikoresho byiza byo mu rwego rwo hejuru bigizwe na nitride ya gallium (GaN) ikura kuri substrate.Ibikoresho bifite ibikoresho byiza byo gutwara ibintu bya elegitoronike kandi nibyiza mugukora ibikoresho byimbaraga nyinshi kandi byihuta cyane.
Uburyo bwo gukora: Igikorwa cyo gukora gikubiyemo gukura kwa GaN kumurongo wa safiro ukoresheje tekinoroji igezweho nko kubika ibyuma biva mu bimera (MOCVD) cyangwa epitaxy ya molekulari (MBE).Uburyo bwo kubitsa bukorwa mugihe cyagenzuwe kugirango harebwe ubuziranenge bwa kirisiti hamwe na firime imwe.
6inch GaN-Kuri-safiro: chip-6 ya santimetero ya safiro ikoreshwa cyane mugutumanaho kwa microwave, sisitemu ya radar, tekinoroji idafite na optoelectronics.
Porogaramu zimwe zisanzwe zirimo
1. Rf imbaraga zongera imbaraga
Inganda zimurika
3. Ibikoresho byitumanaho bidafite insinga
4. Ibikoresho bya elegitoronike mubushyuhe bwo hejuru
5. Ibikoresho bya optoelectronic
Ibisobanuro ku bicuruzwa
- Ingano: Diameter ya substrate ni santimetero 6 (hafi mm 150).
- Ubwiza bwubuso: Ubuso bwarakozwe neza kugirango butange indorerwamo nziza.
- Ubunini: Ubunini bwurwego rwa GaN burashobora gutegurwa ukurikije ibisabwa byihariye.
- Gupakira: Substrate yuzuye neza ibikoresho birwanya static kugirango wirinde kwangirika mugihe cyo gutwara.
- Impande zumwanya: Substrate ifite impande zihariye zorohereza guhuza no gukora mugihe cyo gutegura ibikoresho.
- Ibindi bipimo: Ibipimo byihariye nko kunanuka, kurwanya no kwibanda kuri doping birashobora guhinduka ukurikije ibyo abakiriya bakeneye.
Hamwe nibintu byabo byiza cyane hamwe nibisabwa bitandukanye, waferi ya santimetero 6 za safiro substrate wafers ni amahitamo yizewe mugutezimbere ibikoresho byifashishwa bya semiconductor bikora cyane mubikorwa bitandukanye.
Substrate | 6 ”1mm <111> p-ubwoko bwa Si | 6 ”1mm <111> p-ubwoko bwa Si |
Epi Kumari | ~ 5um | ~ 7um |
Epi Kumari | <2% | <2% |
Umuheto | +/- 45um | +/- 45um |
Kumena | <5mm | <5mm |
BV | > 1000V | > 1400V |
HEMT Al% | 25-35% | 25-35% |
HEMT ThickAvg | 20-30nm | 20-30nm |
Insitu SiN Cap | 5-60nm | 5-60nm |
2DEG inc. | ~ 1013cm-2 | ~ 1013cm-2 |
Kugenda | ~ 2000cm2/ Vs (<2%) | ~ 2000cm2/ Vs (<2%) |
Rsh | <330ohm / sq (<2%) | <330ohm / sq (<2%) |