8Mu 200mm 4H-N SiC Wafer Ikora dummy icyiciro cyubushakashatsi

Ibisobanuro bigufi:

Uko ubwikorezi, ingufu n’amasoko yinganda bigenda byiyongera, ibyifuzo bya elegitoroniki yizewe kandi ikora neza bikomeje kwiyongera. Kugirango uhuze ibikenewe kugirango imikorere ya semiconductor itezimbere, abakora ibikoresho bareba ibikoresho bigari bya semiconductor, nka 4H SiC Prime Grade portfolio ya 4H n -ubwoko bwa silicon karbide (SiC).

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Ibicuruzwa birambuye

Ibicuruzwa

Bitewe nimiterere yihariye yumubiri na elegitoronike, ibikoresho bya 200mm ya SiC wafer ya semiconductor ikoreshwa mugukora ibintu byinshi, ubushyuhe bwinshi, birwanya imirasire, hamwe nibikoresho bya elegitoroniki byihuta. 8inch SiC substrate igiciro kigenda kigabanuka buhoro buhoro uko ikoranabuhanga rigenda ritera imbere kandi ibyifuzo biriyongera. Iterambere rya tekinoloji ya vuba riganisha ku musaruro wakozwe na 200mm ya SiC wafers. Ibyiza byingenzi byibikoresho bya SiC wafer ugereranije na wafers ya Si na GaAs: Imbaraga zumuriro wamashanyarazi wa 4H-SiC mugihe cyo gusenyuka kwa avalanche birenze gahunda yubunini burenze agaciro kangana na Si na GaAs. Ibi biganisha ku kugabanuka gukabije kuri leta irwanya Ron. Ubushobozi buke kuri leta, bufatanije nubucucike buri hejuru hamwe nubushyuhe bwumuriro, butuma ikoreshwa ryurupfu ruto cyane kubikoresho byamashanyarazi. Ubushyuhe bwo hejuru bwa SiC bugabanya ubukana bwumuriro wa chip. Ibikoresho bya elegitoroniki yibikoresho bishingiye kuri waferi ya SiC birahagaze neza mugihe ndetse no ku bushyuhe buhamye, ibyo bigatuma ibicuruzwa byizerwa cyane. Carbide ya Silicon irwanya cyane imirasire ikomeye, idatesha agaciro ibikoresho bya elegitoroniki ya chip. Ubushyuhe buke bugabanya ubushyuhe bwa kristu (irenga 6000C) igufasha gukora ibikoresho byizewe cyane kubikorwa bikarishye hamwe nibisabwa bidasanzwe. Kugeza ubu, turashobora gutanga ibyiciro bito 200mmSiC wafer ihamye kandi ubudahwema kandi dufite ububiko mububiko.

Ibisobanuro

Umubare	Ingingo	Igice	Umusaruro	Ubushakashatsi	Dummy
1. Ibipimo
1.1	polytype	--	4H	4H	4H
1.2	Icyerekezo	°	<11-20> 4 ± 0.5	<11-20> 4 ± 0.5	<11-20> 4 ± 0.5
2. Ibikoresho by'amashanyarazi
2.1	dopant	--	Ubwoko bwa Azote	Ubwoko bwa Azote	Ubwoko bwa Azote
2.2	Kurwanya	ohm · cm	0.015 ~ 0.025	0.01 ~ 0.03	NA
3. Ibikoresho bya mashini
3.1	diameter	mm	200 ± 0.2	200 ± 0.2	200 ± 0.2
3.2	ubunini	μm	500 ± 25	500 ± 25	500 ± 25
3.3	Icyerekezo	°	[1- 100] ± 5	[1- 100] ± 5	[1- 100] ± 5
3.4	Uburebure bwimbitse	mm	1 ~ 1.5	1 ~ 1.5	1 ~ 1.5
3.5	LTV	μm	≤5 (10mm * 10mm)	≤5 (10mm * 10mm)	≤10 (10mm * 10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Umuheto	μm	-25 ~ 25	-45 ~ 45	-65 ~ 65
3.8	Intambara	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4. Imiterere
4.1	Ubucucike bwa micropipe	ea / cm2	≤2	≤10	≤50
4.2	ibyuma	atom / cm2	≤1E11	≤1E11	NA
4.3	TSD	ea / cm2	00500	0001000	NA
4.4	BPD	ea / cm2	0002000	0005000	NA
4.5	TED	ea / cm2	0007000	0010000	NA
5. Ubwiza bwiza
5.1	imbere	--	Si	Si	Si
5.2	Kurangiza	--	Si-face CMP	Si-face CMP	Si-face CMP
5.3	agace	ea / wafer	≤100 (ubunini≥0.3μm)	NA	NA
5.4	gushushanya	ea / wafer	≤5, Uburebure bwose≤200mm	NA	NA
5.5	Impande chips / indents / ibice / irangi / kwanduza	--	Nta na kimwe	Nta na kimwe	NA
5.6	Agace ka polytype	--	Nta na kimwe	Ubuso ≤10%	Ubuso ≤30%
5.7	Ikimenyetso cy'imbere	--	Nta na kimwe	Nta na kimwe	Nta na kimwe
6. Ubwiza bwinyuma
6.1	inyuma kurangiza	--	Umudepite	Umudepite	Umudepite
6.2	gushushanya	mm	NA	NA	NA
6.3	Inyuma yinyuma chip / indents	--	Nta na kimwe	Nta na kimwe	NA
6.4	Inyuma yinyuma	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Ikimenyetso cyinyuma	--	Ikimenyetso	Ikimenyetso	Ikimenyetso
7. Impande
7.1	inkombe	--	Chamfer	Chamfer	Chamfer
8. Ipaki
8.1	gupakira	--	Epi-yiteguye hamwe na vacuum gupakira	Epi-yiteguye hamwe na vacuum gupakira	Epi-yiteguye hamwe na vacuum gupakira
8.2	gupakira	--	Multi-wafer gupakira	Multi-wafer gupakira	Multi-wafer gupakira