8inch Silicon wafer P / N-ubwoko (100) 1-100Ω dummy reclaim substrate

Ibisobanuro bigufi:

Ibarura rinini rya waferi ebyiri zometseho, wafer zose kuva kuri 50 kugeza 400mm z'umurambararo Niba ibisobanuro byawe bitabonetse mubitabo byacu, twashizeho umubano muremure hamwe nabaguzi benshi bashoboye guhitamo wafer kugirango bahuze nibisobanuro byihariye.Waferi ebyiri zogoshywe zirashobora gukoreshwa kuri silicon, ikirahure nibindi bikoresho bikunze gukoreshwa munganda za semiconductor.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Kumenyekanisha agasanduku ka wafer

Wafer ya santimetero 8 ni ibikoresho bisanzwe bikoreshwa muri silicon substrate kandi bikoreshwa cyane mubikorwa byo gukora imiyoboro ihuriweho.Wafer ya silicon isanzwe ikoreshwa mugukora ubwoko butandukanye bwumuzunguruko uhuriweho, harimo microprocessor, chip yo kwibuka, sensor nibindi bikoresho bya elegitoroniki.Wafers ya santimetero 8 ikoreshwa mugukora chip zingana nini, hamwe nibyiza birimo ubuso bunini hamwe nubushobozi bwo gukora chip nyinshi kuri wafer imwe ya silicon, bigatuma umusaruro wiyongera.Wafer ya 8-silicon wafer nayo ifite imiterere yubukanishi nubumashini, ikwiranye n’umusaruro munini w’umuzunguruko.

Ibiranga ibicuruzwa

8 "Ubwoko bwa P / N, Wafer ya silicon (25 pc)

Icyerekezo: 200

Kurwanya: 0.1 - 40 ohm • cm (Birashobora gutandukana mubyiciro)

Umubyimba: 725 +/- 20um

Icyiciro / Ikurikirana / Icyiciro Cyizamini

UMUTUNGO W'INGENZI

Parameter	Ibiranga
Ubwoko / Dopant	P, Boron N, Fosifore N, Antimony N, Arsenic
Icyerekezo	<100>, <111> gabanya icyerekezo kuri buri mukiriya
Ibirimo Oxygene	10¹⁹ppmA Kwihanganira abakiriya kugisobanuro cyabakiriya
Ibirimwo	<0,6 ppmA

UMUTUNGO W'IKORANABUHANGA

Parameter	Prime	Gukurikirana / Ikizamini A.	Ikizamini
Diameter	200 ± 0.2mm	200 ± 0.2mm	200 ± 0.5 mm
Umubyimba	725 ± 20µm (bisanzwe)	725 ± 25µm (bisanzwe) 450 ± 25µm 625 ± 25µm 1000 ± 25µm 1300 ± 25µm 1500 ± 25 µm	725 ± 50µm (bisanzwe)
TTV	<5 µm	<10 µm	<15 µm
Umuheto	<30 µm	<30 µm	<50 µm
Gupfunyika	<30 µm	<30 µm	<50 µm
Uruziga	SEMI-STD
Ikimenyetso	Ibanze rya SEMI-Flat gusa, Inzu ya SEMI-STD Jeida Flat, Notch

Parameter	Prime	Gukurikirana / Ikizamini A.	Ikizamini
Ibipimo by'uruhande rw'imbere
Imiterere y'ubuso	Imashini ya Shimi	Imashini ya Shimi	Imashini ya Shimi
Ubuso	<2 A °	<2 A °	<2 A °
Kwanduza Ibice @> 0.3 µm	= 20	= 20	= 30
Haze, ibyobo Igishishwa cya orange	Nta na kimwe	Nta na kimwe	Nta na kimwe
Yabonye, Ibimenyetso Imirongo	Nta na kimwe	Nta na kimwe	Nta na kimwe
Ibipimo by'inyuma
Kuvunika, igikona, kubona ibimenyetso, ikizinga	Nta na kimwe	Nta na kimwe	Nta na kimwe
Imiterere y'ubuso	Caustic etched