Ubwoko bwa SiC Imbuto Crystal Substrates Dia 205/203/208 4H-N Ubwoko bwitumanaho ryiza

Ubwoko bwa SiC Imbuto Crystal Substrates Dia 205/203/208 4H-N Ubwoko bwa Optical Itumanaho Ryerekanwe

Ibisobanuro bigufi:

SiC (silicon carbide) imbuto ya kristu yubutaka, nkibintu nyamukuru bitwara ibikoresho bya semiconductor yo mu gisekuru cya gatatu, ikoresha imbaraga zabo nyinshi (4.9 W / cm · K), imbaraga zo kumeneka cyane (2-4 MV / cm), hamwe na bande yagutse (3.2 eV) kugirango ibe ibikoresho fatizo bya optoelectronics, ibinyabiziga bitanga ingufu, 5G itumanaho. Binyuze mu buhanga buhanitse bwo gutwara ibintu nko gutwara imyuka yumubiri (PVT) hamwe na epitaxy ya epitexy (LPE), XKH itanga ubwoko bwa 4H / 6H-N, igice kimwe, hamwe na 3C-SiC imbuto ya polytype ya substrate muburyo bwa wafer ya santimetero 2-12, hamwe na micropipe yuzuye munsi ya cm 0.3, hamwe nuburinganire buri hagati ya 20-23 m2. Serivisi zacu zirimo gukura kwa heteroepitaxial (urugero, SiC-kuri-Si), gutunganya nanoscale neza (± 0.1 μm kwihanganira), no gutanga byihuse kwisi, guha abakiriya gutsinda inzitizi za tekiniki no kwihutisha kutabogama kwa karubone no guhindura ubwenge.

Ohereza imeri kuri twe

Ibiranga

Ibipimo bya tekiniki

Silicon karbide imbuto wafer
Polytype	4H
Ikosa ryerekana icyerekezo	4 ° yerekeza kuri <11-20> ± 0.5º
Kurwanya	Kumenyekanisha
Diameter	205 ± 0.5mm
Umubyimba	600 ± 50μm
Ubugome	CMP, Ra≤0.2nm
Ubucucike bwa Micropipe	≤1 ea / cm2
Igishushanyo	≤5, Uburebure bwose≤2 * Diameter
Imipira / impande	Nta na kimwe
Ikimenyetso cya laser imbere	Nta na kimwe
Igishushanyo	≤2, Uburebure bwose≤Ibipimo
Imipira / impande	Nta na kimwe
Agace ka polytype	Nta na kimwe
Ikimenyetso cya laser inyuma	1mm (uhereye hejuru)
Impande	Chamfer
Gupakira	Cassette ya Multi-Wafer

Ibintu by'ingenzi biranga

1. Imiterere ya Crystal nuburyo bwo gukora amashanyarazi

· Crystallographic Stabilite: 100% 4H-SiC polytype yiganje, zeru zeru nyinshi (urugero, 6H / 15R), hamwe na XRD itigisa umurongo wuzuye ubugari kuri kimwe cya kabiri ntarengwa (FWHM) ≤32.7 arcsec.

· Umuvuduko mwinshi wa Carrier: Imashini ya elegitoronike ya cm 5.400 / V · s (4H-SiC) hamwe nu mwobo wa cm 380 cm / V · s, ituma ibishushanyo mbonera byihuta.

· Gukomera kw'imirasire: Ihanganira imirasire ya 1 ya MeV ya neutron hamwe no kwangirika kwimuka ya 1 × 10¹⁵ n / cm², nibyiza mu kirere no mu kirere.

2. Ibyiza byubushyuhe nubukanishi

· Ubushuhe budasanzwe bwubushyuhe: 4.9 W / cm · K (4H-SiC), inshuro eshatu za silikoni, ibikorwa bifasha hejuru ya 200 ° C.

· Coefficient yo Kwagura Ubushyuhe Buke: CTE ya 4.0 × 10⁻⁶ / K (25-1000 ° C), igahuza neza nububiko bushingiye kuri silikoni no kugabanya imihangayiko yubushyuhe.

3. Kugenzura neza no gutunganya neza

· Ubucucike bwa Micropipe: <0,3 cm⁻² (waferi ya santimetero 8), ubucucike bwa dislokisiyo <1000 cm⁻² (byagenzuwe hakoreshejwe KOH).

· Ubwiza bwubuso: CMP isizwe na Ra <0.2 nm, yujuje ibyangombwa bya EUV lithographie-ibyangombwa bisabwa.

Ibyingenzi

Indanganturo	Gusaba	Ibyiza bya tekiniki
Itumanaho ryiza	Lazeri 100G / 400G, moderi ya silicon Photonics	InP imbuto yimbuto ituma bandgap itaziguye (1.34 eV) hamwe na Si-ishingiye kuri heteroepitaxy, bigabanya igihombo cyo guhuza optique.
Imodoka nshya	800V ihinduranya ingufu za inverteri, charger zo mu bwato (OBC)	4H-SiC substrates ihangane> 1,200 V, igabanya igihombo cyogutwara 50% nubunini bwa sisitemu 40%.
5G Itumanaho	Ibikoresho bya milimetero-RF RF (PA / LNA), ibyuma byongera ingufu za sitasiyo	Semi-insuline ya SiC substrates (résistivivite> 10⁵ Ω · cm) ituma imirongo myinshi (60 GHz +) ihuza pasiporo.
Ibikoresho byo mu nganda	Ibyuma byubushyuhe bwo hejuru, impinduka zubu, monitor ya reaction ya nucleaire	InSb imbuto yimbuto (0.17 eV bandgap) itanga sensitivite igera kuri 300% @ 10 T.

Ibyiza by'ingenzi

SiC (silicon carbide) imbuto ya kristal substrate itanga imikorere ntagereranywa hamwe na 4.9 W / cm · K itwara ubushyuhe bwumuriro, imbaraga zumuriro wa 2-4 MV / cm, hamwe na 3.2 eV mugari, bigatanga imbaraga nyinshi, inshuro nyinshi, hamwe nubushyuhe bwo hejuru. Kugaragaza ubucucike bwa micropipe zero na <1.000 cm⁻² ubwinshi bwa dislocation, izi substrate zemeza ko kwizerwa mubihe bikabije. Ubusembure bwimiti hamwe nubuso bwa CVD (Ra <0.2 nm) bishyigikira iterambere ryiterambere rya heteroepitaxial (urugero, SiC-kuri-Si) kuri optoelectronics na sisitemu ya power.

Serivisi za XKH:

1. Umusaruro wihariye

· Imiterere ya Wafer ihindagurika: waferi ya santimetero 2-12 zifite uruziga, urukiramende, cyangwa imiterere-karemano (± 0.01 mm kwihanganira).

Kugenzura Doping: Azote (N) na aluminiyumu (Al) ikoreshwa neza na CVD, igera kuri 10ivity kugeza 10⁶ Ω · cm.

2. Ikoranabuhanga rigezweho?

· Heteroepitaxy: SiC-kuri-Si (ihujwe n'imirongo ya silikoni 8 ya silicon) na SiC-kuri-Diamond (imiyoboro y'amashanyarazi> 2000 W / m · K).

· Kugabanya ubukana: Gutera hydrogène hamwe na annealing kugirango ugabanye micropipe / ubucucike, kuzamura umusaruro wafer kuri> 95%.

3. Sisitemu yo gucunga neza?

· Kwipimisha kurangira-kurangira: Raman spectroscopy (verisiyo ya polytype), XRD (kristu), na SEM (gusesengura inenge).

· Impamyabumenyi: Yubahiriza AEC-Q101 (imodoka), JEDEC (JEDEC-033), na MIL-PRF-38534 (urwego rwa gisirikare).

4. Inkunga yo gutanga amasoko ku isi yose?

· Ubushobozi bw'umusaruro: Ibisohoka buri kwezi> 10,000 wafer (60% 8-santimetero), hamwe no gutanga amasaha 48 byihutirwa.

· Logistique Network: Igipfukisho mu Burayi, Amerika y'Amajyaruguru, na Aziya-Pasifika ukoresheje ibicuruzwa byo mu kirere / inyanja hamwe n'ububiko bugenzurwa n'ubushyuhe.

5. Gutezimbere Tekinike?

· Laboratwari ihuriweho na R&D: Gufatanya kuri SiC power module ipakira neza (urugero, guhuza DBC substrate).

· Uruhushya rwa IP: Tanga GaN-kuri-SiC RF ikorana buhanga rya tekinoroji yo kugabanya ibiciro byabakiriya R&D.

Incamake

SiC (silicon carbide) imbuto ya kristal substrate, nkibikoresho byingenzi, irimo kuvugurura urunigi rw’inganda ku isi binyuze mu iterambere mu mikurire ya kristu, kugenzura inenge, no kwishyira hamwe. Mugukomeza guteza imbere kugabanya inenge ya wafer, kugabanya umusaruro wa santimetero 8, no kwagura urubuga rwa heteroepitaxial (urugero, SiC-kuri-Diamond), XKH itanga ibisubizo byizewe cyane, bidahenze kubisubizo bya optoelectronics, ingufu nshya, ninganda zateye imbere. Ibyo twiyemeje guhanga udushya bituma abakiriya bayobora kutabogama kwa karubone hamwe na sisitemu yubwenge, gutwara ibihe bizakurikiraho bigari-biggap semiconductor ecosystems.