200mm 8inch GaN kuri safiro Epi-layer wafer substrate
Kumenyekanisha ibicuruzwa
Ubuso bwa santimetero 8 GaN-kuri-safiro ni ibikoresho byujuje ubuziranenge bwo mu rwego rwo hejuru bigizwe na Gallium Nitride (GaN) igizwe na safiro.Ibi bikoresho bitanga ibikoresho byiza bya elegitoroniki kandi nibyiza muguhimba amashanyarazi menshi-yumurongo wa semiconductor ibikoresho.
Uburyo bwo gukora
Igikorwa cyo gukora kirimo gukura kwa epitaxial ya gati ya GaN kumurongo wa safiro ukoresheje tekiniki zigezweho suchas ibyuma-nganda biva mu bicu biva mu kirere (MOCVD) cyangwa epitaxy ya molekulari (MBE).Kubitsa bikorwa mubihe byagenzuwe kugirango harebwe ubuziranenge bwa kirisiti hamwe na firime.
Porogaramu
Ubuso bwa santimetero 8 GaN-kuri-Sapphire isanga porogaramu nini mubice bitandukanye birimo itumanaho rya microwave, radarsystems, tekinoroji idafite umugozi, na optoelectronics.Bimwe mubisabwa bisanzwe birimo:
1. Amashanyarazi ya RF
Inganda zimurika
3. Ibikoresho byitumanaho bitagira umurongo
4. Ibikoresho bya elegitoronike kubushyuhe bwo hejuru
5. Oibikoresho bya ptoelectronic
Ibicuruzwa byihariye
-Igipimo: Ingano ya substrate ni santimetero 8 (200 mm) z'umurambararo.
- Ubwiza bwubuso: Ubuso busizwe neza kurwego rwo hejuru rworoshye kandi bugaragaza ubwiza bwindorerwamo.
- Ubunini: Ubunini bwa GaN burashobora gutegurwa hashingiwe kubisabwa byihariye.
- Gupakira: Substrate yapakiwe neza mubikoresho birwanya static kugirango wirinde kwangirika mugihe cyo gutambuka.
- Icyerekezo cya Flat: Substrate ifite icyerekezo cyihariye cyo gufasha muguhuza wafer no gutunganya mugihe cyo guhimba ibikoresho.
- Ibindi bipimo: Umwihariko wubugari, kurwanya, hamwe na dopant yibanze birashobora guhuzwa nkuko abakiriya babisabwa.
Hamwe nibikoresho byayo byiza hamwe nibisabwa byinshi, 8-cm ya GaN-kuri-safiro substrate ni amahitamo yizewe yo guteza imbere ibikoresho bya semiconductor ikora cyane mubikorwa bitandukanye.
Usibye GaN-Kuri-Sapphire, dushobora kandi gutanga mubijyanye no gukoresha ibikoresho byamashanyarazi, umuryango wibicuruzwa urimo waferi ya santimetero 8 za AlGaN / GaN-kuri-Si na epitaxial 8-P-cap AlGaN / GaN-kuri-Si wafers.Muri icyo gihe, twahinduye udushya twifashishije tekinoroji yacyo ya 8 ya GaN epitaxy ya tekinoroji mu murima wa microwave, tunateza imbere wafer ya santimetero 8 AlGaN / GAN-kuri-HR Si epitaxy wafer ihuza imikorere nini nubunini bunini, igiciro gito kandi bihujwe no gutunganya ibikoresho bya santimetero 8.Usibye nitride ya silikoni ishingiye kuri silikoni, dufite n'umurongo wibicuruzwa bya AlGaN / GaN-kuri-SiC epitaxial wafers kugirango tubone ibyo abakiriya bakeneye kuri silicon ishingiye kuri gallium nitride ibikoresho bya epitaxial.
Igishushanyo kirambuye
