50.8mm 2inch GaN kuri safiro Epi-layer wafer

Ibisobanuro bigufi:

Nkibisekuru bya gatatu ibikoresho bya semiconductor, nitride ya gallium ifite ibyiza byo guhangana nubushyuhe bwo hejuru, guhuza cyane, ubushyuhe bwinshi nubushyuhe buke.Ukurikije ibikoresho bya substrate bitandukanye, impapuro za epiteli ya gallium irashobora kugabanywamo ibyiciro bine: nitride ya gallium ishingiye kuri gallium nitride, silikoni karbide ishingiye kuri gallium nitride, safiro ishingiye kuri gallium nitride na nitride ya silikoni.Urupapuro rushingiye kuri silicon nitride epitaxial urupapuro nigicuruzwa gikoreshwa cyane hamwe nigiciro gito cyumusaruro hamwe nikoranabuhanga rikuze.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Gukoresha gallium nitride GaN urupapuro rwibanze

Ukurikije imikorere ya nitride ya gallium, chipi ya gallium nitride epitaxial chip irakenewe cyane cyane kumashanyarazi menshi, inshuro nyinshi, hamwe na voltage nkeya.

Bigaragarira muri:

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3) Ubushyuhe bukabije bwumuriro: ubushyuhe bwinshi bwa nitride ya gallium ituma igira imikorere myiza yo gukwirakwiza ubushyuhe, ibereye kubyara ingufu nyinshi, ubushyuhe bwinshi nubundi buryo bwibikoresho;

4. gukoresha neza voltage mubisanzwe biri munsi ya 650V.

Ingingo	GaN-TCU-C50	GaN-TCN-C50	GaN-TCP-C50
Ibipimo	e 50.8mm ± 0.1mm
Umubyimba	4.5 ± 0.5 um		4.5 ± 0.5um
Icyerekezo	C-indege (0001) ± 0.5 °
Ubwoko bw'imyitwarire	N-Ubwoko (Undoped)	N-ubwoko (Si-doped)	Ubwoko bwa P (Mg-Dope)
Kurwanya (3O0K)	<0.5 Q ・ cm	<0.05 Q ・ cm	~ 10 Q ・ cm
Kwitonda	<5x10¹⁷cm^-3	> 1x10¹⁸cm^-3	> 6x1016 cm^-3
Kugenda	~ 300 cm²/ V.	~ 200 cm²/ V.	~ 10 cm²/ V.
Ubucucike	Munsi ya 5x10⁸cm^-2(ubarwa na FWHMs ya XRD)
Imiterere	GaN kuri safiro (Bisanzwe: SSP Ihitamo: DSP)
Ubuso bushobora gukoreshwa	> 90%
Amapaki	Gipakirwa mubyiciro 100 byicyumba gisukuye, muri cassettes za 25pcs cyangwa ibikoresho bya wafer imwe, munsi yikirere cya azote.