150mm 200mm 6inch 8inch GaN kuri Silicon Epi-layer wafer Gallium nitride epitaxial wafer
Uburyo bwo gukora
Igikorwa cyo gukora kirimo gukura kwa GaN kumurongo wa safiro ukoresheje tekinoroji igezweho nko kubika ibyuma biva mu bimera (MOCVD) cyangwa epitaxy ya molekulari (MBE).Uburyo bwo kubitsa bukorwa mugihe cyagenzuwe kugirango harebwe ubuziranenge bwa kirisiti hamwe na firime imwe.
6inch GaN-Kuri-safiro: chip-6 ya santimetero ya safiro ikoreshwa cyane mugutumanaho kwa microwave, sisitemu ya radar, tekinoroji idafite na optoelectronics.
Porogaramu zimwe zisanzwe zirimo
1. Rf imbaraga zongera imbaraga
Inganda zimurika
3. Ibikoresho byitumanaho bidafite insinga
4. Ibikoresho bya elegitoronike mubushyuhe bwo hejuru
5. Ibikoresho bya optoelectronic
Ibisobanuro ku bicuruzwa
- Ingano: Diameter ya substrate ni santimetero 6 (hafi mm 150).
- Ubwiza bwubuso: Ubuso bwarakozwe neza kugirango butange indorerwamo nziza.
- Ubunini: Ubunini bwurwego rwa GaN burashobora gutegurwa ukurikije ibisabwa byihariye.
- Gupakira: Substrate yuzuye neza ibikoresho birwanya static kugirango wirinde kwangirika mugihe cyo gutwara.
- Impande zumwanya: Substrate ifite impande zihariye zorohereza guhuza no gukora mugihe cyo gutegura ibikoresho.
- Ibindi bipimo: Ibipimo byihariye nko kunanuka, kurwanya no kwibanda kuri doping birashobora guhinduka ukurikije ibyo abakiriya bakeneye.
Hamwe nibintu byabo byiza cyane hamwe nibisabwa bitandukanye, waferi ya santimetero 6 za safiro substrate wafers ni amahitamo yizewe mugutezimbere ibikoresho byifashishwa bya semiconductor bikora cyane mubikorwa bitandukanye.
Substrate | 6 ”1mm <111> p-ubwoko bwa Si | 6 ”1mm <111> p-ubwoko bwa Si |
Epi Kumari | ~ 5um | ~ 7um |
Epi Kumari | <2% | <2% |
Umuheto | +/- 45um | +/- 45um |
Kumena | <5mm | <5mm |
BV | > 1000V | > 1400V |
HEMT Al% | 25-35% | 25-35% |
HEMT ThickAvg | 20-30nm | 20-30nm |
Insitu SiN Cap | 5-60nm | 5-60nm |
2DEG inc. | ~ 1013cm-2 | ~ 1013cm-2 |
Kugenda | ~ 2000cm2/ Vs (<2%) | ~ 2000cm2/ Vs (<2%) |
Rsh | <330ohm / sq (<2%) | <330ohm / sq (<2%) |