Uburyo bwa CVD bwo kubyaza umusaruro mwinshi SiC ibikoresho fatizo bya silicon carbide synthesis itanura kuri 1600 ℃

Uburyo bwa CVD bwo gutanga umusaruro mwinshi SiC ibikoresho fatizo bya silicon karbide synthesis itanura kuri 1600 Image Ishusho Yerekanwe

Ibisobanuro bigufi:

Carbide ya Silicon (SiC) itanura (CVD). Ikoresha tekinoroji ya Vapor Deposition (CVD) kugirango sources amasoko ya silikoni ya gaze (urugero: SiH₄, SiCl₄) ahantu h’ubushyuhe bwo hejuru aho bakira amasoko ya karubone (urugero C₃H₈, CH₄). Igikoresho cyingenzi cyo gukura cyane-silicon karbide kristal kuri substrate (grafite cyangwa imbuto ya SiC). Ikoranabuhanga rikoreshwa cyane cyane mugutegura SiC imwe ya kristal substrate (4H / 6H-SiC), nicyo gikoresho cyibanze cyo gutunganya ingufu za semiconductor (nka MOSFET, SBD).

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ihame ry'akazi ：

1. Ibikoresho byabanjirije. Inkomoko ya Silicon (urugero: SiH₄) hamwe na karubone (urugero C₃H₈) imyuka ivangwa mukigereranyo kandi igaburirwa mubyumba byabigenewe.

2. Ubushyuhe bwo hejuru bubora: Ku bushyuhe bwo hejuru bwa 1500 ~ 2300 ℃, kubora gaze kubyara atome ikora Si na C.

3. Ibisubizo byubuso: Atome ya Si na C zishyirwa hejuru yubutaka kugirango habeho urwego rwa kirisiti ya SiC.

Ibipimo by'ingenzi:

· Ubushyuhe: 1600 ~ 2200 ℃ (> 2000 ℃ kuri 4H-SiC)

· Umuvuduko: 50 ~ 200mbar (umuvuduko muke wo kugabanya nucleation)

Ikigereranyo cya gaze: Si / C≈1.0 ~ 1.2 (kugirango wirinde inenge ya Si cyangwa C)

Ibyingenzi byingenzi:

(1) Ubwiza bwa Crystal
Ubucucike buke: Ubucucike bwa microtubule <0.5cm ⁻², ubucucike bwa dislocation <10⁴ cm⁻².

Ubwoko bwa polycrystalline igenzura: irashobora gukura 4H-SiC (nyamukuru), 6H-SiC, 3C-SiC nubundi bwoko bwa kristu.

(2) Imikorere y'ibikoresho
Ubushyuhe bwo hejuru: ubushyuhe bwa grafite cyangwa gushyushya ubushyuhe, ubushyuhe> 2300 ℃.

Kugenzura uburinganire: ihindagurika ry'ubushyuhe ± 5 ℃, umuvuduko wo gukura 10 ~ 50μm / h.

Sisitemu ya gazi: Imiyoboro yuzuye yuzuye (MFC), ubuziranenge bwa gaze ≥99.999%.

(3) Ibyiza byikoranabuhanga
Isuku ryinshi: Kwibanda kumyanda yibanze <10¹⁶ cm⁻³ (N, B, nibindi).

Ingano nini: Shyigikira 6 "/ 8" SiC gukura.

(4) Gukoresha ingufu nigiciro
Gukoresha ingufu nyinshi (200 ~ 500kW · h ku itanura), bingana na 30% ~ 50% byumusaruro wa SiC substrate.

Porogaramu nyamukuru:

2. Igikoresho cya Rf: 5G ishingiro rya GaN-kuri-SiC epitaxial substrate.

3.Ibikoresho by’ibidukikije bikabije: ibyuma byubushyuhe bwo hejuru mu kirere n’inganda zikoresha ingufu za kirimbuzi.

Ibisobanuro bya tekiniki ：

Ibisobanuro	Ibisobanuro
Ibipimo (L × W × H)	4000 x 3400 x 4300 mm cyangwa guhitamo
Itanura ryumuriro	1100mm
Ubushobozi bwo gupakira	50kg
Urwego ntarengwa	10-2Pa (2h nyuma ya pompe ya molekile itangiye)
Igipimo cy’izamuka ry’Urugereko	≤10Pa / h (nyuma yo kubara)
Itanura ryo hepfo itwikiriye	1500mm
Uburyo bwo gushyushya	Gushyushya induction
Ubushyuhe ntarengwa mu itanura	2400 ° C.
Amashanyarazi	2X40kW
Ibipimo by'ubushyuhe	Ibipimo by'amabara abiri ya infragre
Ubushyuhe	900 ~ 3000 ℃
Kugenzura ubushyuhe neza	± 1 ° C.
Kugenzura urwego rwumuvuduko	1 ~ 700mbar
Kugenzura Imyuka	1 ~ 5mbar ± 0.1mbar; 5 ~ 100mbar ± 0.2mbar; 100 ~ 700mbar ± 0.5mbar
Uburyo bwo gupakira	Umutwaro wo hasi;
Iboneza	Ikigereranyo cyubushyuhe bubiri, gupakurura forklift.