HPSI SiC Wafer ≥90% Ingano y'Ikoranabuhanga ryo Gutuma Indorerwamo za AI/AR zitangwa
Intangiriro y'ingenzi: Uruhare rwa HPSI SiC Wafers mu birahuri bya AI/AR
HPSI (High-Purity Semi-Insulating Wafers) Silicon Carbide wafers ni wafers zihariye zirangwa no gukomera cyane (>10⁹ Ω·cm) no kuba nke cyane. Mu ndorerwamo za AI/AR, zikoreshwa cyane cyane nk'ibikoresho by'ingenzi bya lens optical waveguide, zikemura ibibazo bifitanye isano n'ibikoresho gakondo bya optique mu bijyanye n'imiterere yoroheje n'urumuri, gushonga k'ubushyuhe, n'imikorere y'urumuri. Urugero, indorerwamo za AR zikoresha lens SiC waveguide zishobora kugera ku bugari bwa 70°–80°, mu gihe zigabanya ubunini bw'urwego rumwe rwa lens kugeza kuri 0.55mm gusa n'uburemere bukagera kuri 2.7g gusa, bikongera cyane uburyohe bwo kwambara no kwinjizwa mu maso.
Ibiranga by'ingenzi: Uburyo ibikoresho bya SiC byongera imbaraga mu gushushanya indorerwamo za AI/AR
Icyitegererezo cyo hejuru cya Refractive Index na Optimization Optimization
- Igipimo cyo kugarura urumuri cya SiC (2.6–2.7) kiri hejuru ya 50% ugereranyije n’ikirahure gisanzwe (1.8–2.0). Ibi bituma imiterere y’igenzura ry’imiraba irushaho kuba mito kandi ikora neza, bikongera cyane FOV. Igipimo cyo kugarura urumuri kinini gifasha kandi gukumira "ingaruka z'umukororombya" zikunze kugaragara mu igenzura ry’imiraba ikwirakwiza amazi, bikongera ubuziranenge bw'ishusho.
Ubushobozi budasanzwe bwo gucunga ubushyuhe
- Iyo ifite ubushobozi bwo gutwara ubushyuhe bugera kuri 490 W/m·K (hafi y’umuringa), SiC ishobora gusibanganya vuba ubushyuhe buturuka kuri module za Micro-LED display. Ibi birinda kwangirika k’imikorere cyangwa gusaza kw’igikoresho bitewe n’ubushyuhe bwinshi, bigatuma bateri imara igihe kirekire kandi ikaba ihamye cyane.
Imbaraga za mekanike n'uburambe
- SiC ifite ubukana bwa Mohs bwa 9.5 (iya kabiri nyuma ya diyama), itanga ubushobozi bwo kudakubita cyane, bigatuma iba nziza cyane ku birahuri bikoreshwa kenshi. Ubukana bwayo bwo hejuru bushobora kugenzurwa na Ra < 0.5 nm, bigatuma urumuri rugabanuka cyane kandi rukwirakwira mu buryo bumwe mu buryo bw'amajwi.
Ubushobozi bw'amashanyarazi
- Uburyo bwo kurwanya amashanyarazi bwa HPSI SiC (>10⁹ Ω·cm) bufasha gukumira ikibazo cy’ibimenyetso. Bushobora kandi gukoreshwa nk'igikoresho cy'amashanyarazi cyiza, bugatuma habaho uburyo bwo gucunga amashanyarazi mu birahuri bya AR.
Amabwiriza y'ibanze yo Gukoresha
Ibice by'ibanze bya Optical kuri AI/AR Glasses
- Lenses za Diffractive Waveguide: Substrates za SiC zikoreshwa mu gukora waveguide z’urumuri ziciriritse cyane zishyigikira FOV nini no gukuraho ingaruka z’umukororombya.
- Amadirishya n'ama-Prism: Binyuze mu gukata no gusiga irangi byihariye, SiC ishobora gutunganywa mu madirishya akingira cyangwa ama-prism y'amatara yo mu bwoko bwa AR, bikongera uburyo bwo kohereza urumuri no kudashira.
Porogaramu zagutse mu zindi nzego
- Ibyuma by'amashanyarazi: Bikoreshwa mu buryo bukoresha ingufu nyinshi nka inverters nshya z'ibinyabiziga bikoresha ingufu ndetse n'ibikoresho bigenzura moteri z'inganda.
- Quantum Optics: Ikora nk'aho ishyira amabara mu bice by'amabara, ikoreshwa mu bikoresho by'itumanaho rya quantum n'ibikoresho byo kumenya.
Igereranya ry'ibipimo bya HPSI SiC Substrate ya santimetero 4 na santimetero 6
| Igipimo | Icyiciro | Igice cya santimetero 4 | Igice cy'ubutaka cya santimetero 6 |
| Diameter | Icyiciro cya Z / Icyiciro cya D | mm 99.5 - mm 100.0 | mm 149.5 - mm 150.0 |
| Ubwoko bwa poly | Icyiciro cya Z / Icyiciro cya D | 4H | 4H |
| Ubunini | Icyiciro cya Z | 500 μm ± 15 μm | 500 μm ± 15 μm |
| Icyiciro cya D | 500 μm ± 25 μm | 500 μm ± 25 μm | |
| Icyerekezo cya Wafer | Icyiciro cya Z / Icyiciro cya D | Ku murongo: <0001> ± 0.5° | Ku murongo: <0001> ± 0.5° |
| Ubucucike bwa mikoropipe | Icyiciro cya Z | ≤ cm² 1 | ≤ cm² 1 |
| Icyiciro cya D | ≤ cm² 15 | ≤ cm² 15 | |
| Ubushobozi bwo guhangana n'ingaruka | Icyiciro cya Z | ≥ 1E10 Ω·cm | ≥ 1E10 Ω·cm |
| Icyiciro cya D | ≥ 1E5 Ω·cm | ≥ 1E5 Ω·cm | |
| Icyerekezo cy'ibanze cy'igorofa | Icyiciro cya Z / Icyiciro cya D | (10-10) ± 5.0° | (10-10) ± 5.0° |
| Uburebure bw'ibanze bw'uburebure | Icyiciro cya Z / Icyiciro cya D | mm 32.5 ± mm 2.0 | Notch |
| Uburebure bw'Ubugari bw'Ubugari | Icyiciro cya Z / Icyiciro cya D | 18.0 mm ± 2.0 mm | - |
| Kutagaragaza Edge | Icyiciro cya Z / Icyiciro cya D | mm 3 | mm 3 |
| Ishusho ya LTV / TTV / Umuheto / Umupfundo | Icyiciro cya Z | ≤ 2.5 μ m / ≤ 5 μ m / ≤ 15 μ m / ≤ 30 mm | ≤ 2.5 μ m / ≤ 6 μ m / ≤ 25 μ m / ≤ 35 mm |
| Icyiciro cya D | ≤ 10 μ m / ≤ 15 μ m / ≤ 25 μ m / ≤ 40 mm | ≤ 5 μ m / ≤ 15 μ m / ≤ 40 μ m / ≤ 80 mm | |
| Ubukana | Icyiciro cya Z | Ra ya Polonye ≤ 1 nm / CMP Ra ≤ 0.2 nm | Ra ya Polonye ≤ 1 nm / CMP Ra ≤ 0.2 nm |
| Icyiciro cya D | Ra ya Polonye ≤ 1 nm / CMP Ra ≤ 0.2 nm | Ra ya Polonye ≤ 1 nm / CMP Ra ≤ 0.5 nm | |
| Uduce tw'inkombe | Icyiciro cya D | Agace k'ikusanyirizo ≤ 0.1% | Uburebure bw'umubumbe ≤ mm 20, imwe ≤ mm 2 |
| Uduce twa Polytype | Icyiciro cya D | Agace k'ikusanyirizo ≤ 0.3% | Agace k'ikusanyirizo ≤ 3% |
| Ibikubiye muri karuboni igaragara | Icyiciro cya Z | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 0.05% |
| Icyiciro cya D | Agace k'ikusanyirizo ≤ 0.3% | Agace k'ikusanyirizo ≤ 3% | |
| Imikufi yo hejuru ya Silicone | Icyiciro cya D | 5 byemewe, buri ≤1mm | Uburebure buhuriweho ≤ 1 x umurambararo |
| Udupira two mu birenge | Icyiciro cya Z | Nta na kimwe cyemewe (ubugari n'ubujyakuzimu ≥0.2mm) | Nta na kimwe cyemewe (ubugari n'ubujyakuzimu ≥0.2mm) |
| Icyiciro cya D | 7 byemewe, buri ≤1mm | 7 byemewe, buri ≤1mm | |
| Guhindura Screw mu Migozi | Icyiciro cya Z | - | ≤ cm² 500 |
| Gupakira | Icyiciro cya Z / Icyiciro cya D | Kaseti ya Wafer nyinshi cyangwa Igikoresho kimwe cya Wafer | Kaseti ya Wafer nyinshi cyangwa Igikoresho kimwe cya Wafer |
Serivisi za XKH: Ubushobozi bwo gukora no guhindura ibintu buhujwe
Isosiyete ya XKH ifite ubushobozi bwo guhuza ibikoresho fatizo kugeza ku byuma bya wafer byarangiye, bikubiyemo uruhererekane rwose rw'imikurire ya SiC substrate, gukata, gusiga irangi, no gutunganya ibintu ku giti cyabyo. Ibyiza by'ingenzi bya serivisi birimo:
- Ubudasa bw'ibikoresho:Dushobora gutanga ubwoko butandukanye bwa wafer nka 4H-N, 4H-HPSI, 4H/6H-P, na 3C-N. Uburyo bwo guhangana n'ibinyabiziga, ubugari, n'icyerekezo bishobora guhindurwa hakurikijwe ibisabwa.
- Ese?Guhindura Ingano mu buryo bworoshye:Dushyigikira gutunganya wafer kuva kuri santimetero 2 kugeza kuri santimetero 12, kandi dushobora no gutunganya imiterere yihariye nk'ibice kare (urugero, 5x5mm, 10x10mm) na prism zidasanzwe.
- Igenzura ry'Ubuziranenge bw'Ikoranabuhanga:Ihindagurika ry'Uburebure bw'Umugozi (TTV) rishobora kuguma kuri <1μm, naho ubushyuhe bw'ubuso bugakomeza kuri Ra < 0.3 nm, byujuje ibisabwa ku buryo bwo kugorora buri ku rwego rwa nano ku bikoresho biyobora umuyoboro w'amazi.
- Igisubizo cyihuse ku Isoko:Uburyo bw'ubucuruzi buhuriweho butuma habaho impinduka nziza kuva ku bushakashatsi n'iterambere kugera ku musaruro mwinshi, bushyigikira ibintu byose kuva ku kugenzura ibintu bito kugeza ku bicuruzwa binini (igihe cyo kwishyura ubusanzwe ni iminsi 15-40).

Ibibazo Bikunze Kubazwa kuri HPSI SiC Wafer
Q1: Kuki HPSI SiC ifatwa nk'igikoresho cyiza cyo gukoresha lenses za AR waveguide?
A1: Ifite igipimo cyo hejuru cyo kurekura (2.6–2.7) gituma imiterere y’umuraba woroshye kandi ukora neza cyane, ushyigikira urwego runini rw’ishusho (urugero, 70°–80°) mu gihe ikuraho "ingaruka z'umukororombya".
Q2: Ni gute HPSI SiC ifasha mu gucunga ubushyuhe mu birahuri bya AI/AR?
A2: Ifite ubushobozi bwo gutwara ubushyuhe bugera kuri 490 W/m·K (hafi y'umuringa), ikuraho ubushyuhe mu buryo bunoze mu bice nka Micro-LED, bigatuma imikorere ihoraho kandi ikamara igihe kirekire.
Q3: Ni izihe nyungu zo kuramba HPSI SiC itanga ku birahuri byo kwambarwa?
A3: Ubukana bwayo budasanzwe (Mohs 9.5) butuma idacika intege cyane, bigatuma iramba cyane ku ikoreshwa rya buri munsi mu birahuri bya AR byo mu rwego rwo hejuru.













