HPSI SiCOI wafer ifite uburebure bwa santimetero 4 na santimetero 6.5

Ishusho ya HPSI SiCOI wafer ifite uburebure bwa santimetero 4 na santimetero 6.

Ibisobanuro bigufi:

Uduce twa 4H-SiCOI two mu bwoko bwa High-purity semi-insulating (HPSI) dukorwa hakoreshejwe ikoranabuhanga rigezweho ryo guhuza no gukata. Uduce twa 4H HPSI two guhuza silicon carbide ku duce twa thermal oxide binyuze mu buryo bubiri bw'ingenzi: guhuza hydrophilic (direct) no guhuza ubuso. Utwo duce twa nyuma dushyiramo urwego rwahinduwe hagati (nk'urwa silicon amorphous, aluminium oxide, cyangwa titanium oxide) kugira ngo twongere ubwiza bw'urusobe no kugabanya uduce, cyane cyane dukwiriye gukoreshwa mu ikoranabuhanga. Kugenzura ubunini bw'urusobe rwa silicon carbide bigerwaho binyuze muri SmartCut ishingiye ku ion implantation cyangwa grinding na CMP polishing processes. SmartCut itanga ubunini bungana neza (50nm–900nm hamwe na ±20nm uniformity) ariko ishobora kwangiza gato crystal bitewe no gushyiramo ion, bigagira ingaruka ku mikorere y'igikoresho cy'ikoranabuhanga. Gusya no gutunganya CMP birinda kwangirika kw'ibikoresho kandi bikunzwe cyane mu mashusho manini (350nm–500µm) na quantum cyangwa PIC applications, nubwo ubunini budahagije (±100nm). Wafer zisanzwe za santimetero 6 zifite urwego rwa SiC rwa 1µm ±0.1µm ku urwego rwa SiO2 rwa 3µm hejuru ya substrates za Si 675µm zifite ubuso butoshye cyane (Rq < 0.2nm). Izi wafer za HPSI SiCOI zikora ibikoresho bya MEMS, PIC, quantum, na optique hamwe n'ubwiza bwiza bw'ibikoresho n'uburyo bworoshye bwo gukora.

Ohereza imeri kuri twe

Ibiranga

Incamake y'Imiterere ya SiCOI Wafer (Silicon Carbide-on-Insulator)

SiCOI wafers ni substrate nshya ya semiconductor ihuza Silicon Carbide (SiC) n'urwego rukingira ubushyuhe, akenshi SiO₂ cyangwa safiro, kugira ngo inoze imikorere mu by'amashanyarazi, RF, na photonics. Hasi hari incamake irambuye y'imiterere yazo igabanyije mu bice by'ingenzi:

Umutungo	Ibisobanuro
Imiterere y'ibikoresho	Urukuta rwa Silicon Carbide (SiC) rufatanye ku kintu gikingira ubushyuhe (ubusanzwe SiO₂ cyangwa safiro)
Imiterere ya kristu	Ubusanzwe ubwoko bwa 4H cyangwa 6H bwa SiC, buzwiho ubwiza bwa kristale no kuba bufite imiterere imwe
Imiterere y'amashanyarazi	Umuyoboro w'amashanyarazi wangiritse cyane (~3 MV/cm), icyuho kinini (~3.26 eV kuri 4H-SiC), umuyoboro muto w'amashanyarazi usohoka
Ubushobozi bwo gutwara ubushyuhe	Ubushyuhe bwinshi (~300 W/m·K), butuma ubushyuhe bukwirakwira neza
Urukurikirane rw'amashanyarazi	Ubwikorezi bw'amashanyarazi (SiO₂ cyangwa safiro) butanga amashanyarazi ajyanye n'aho aturuka kandi bugagabanya ubushobozi bwa parasite
Imiterere ya mekanike	Ubukomere bwinshi (~ 9 Mohs scale), imbaraga nziza cyane za mekanike, n'ubushyuhe buhamye
Kurangiza ubuso	Ubusanzwe iraryoshye cyane kandi ifite ubucucike buke, ikwiriye gukoreshwa mu gukora ibikoresho
Porogaramu	Ibikoresho by'ikoranabuhanga bikoresha ingufu, ibikoresho bya MEMS, ibikoresho bya RF, ibikoresho bipima ubushyuhe bwinshi n'imbaraga z'amashanyarazi

SiCOI wafers (Silicon Carbide-on-Insulator) zigaragaza imiterere ya semiconductor substrate igezweho, igizwe n'urwego rwo hejuru rwa silicon carbide (SiC) ifatanye ku rundi rwego rukingira, akenshi silicon dioxide (SiO₂) cyangwa safiro. Silicon carbide ni semiconductor ifite icyuho kinini izwiho ubushobozi bwo kwihanganira voltage nyinshi n'ubushyuhe bwinshi, hamwe no gutwara ubushyuhe bwiza cyane ndetse no gukomera cyane kwa mekanike, bigatuma iba nziza cyane mu gukoresha ikoranabuhanga rikoresha ingufu nyinshi, frequency nyinshi, n'ubushyuhe bwinshi.

Urusobe rw'ibikoresho bikingira ubushyuhe muri SiCOI rutanga uburyo bwo kwitandukanya neza n'amashanyarazi, bigabanya cyane ubushobozi bwa parasite n'imigezi isohoka hagati y'ibikoresho, bityo byongera imikorere n'ubwizigirwa muri rusange by'ibikoresho. Ubuso bwa wafer buraseswa neza kugira ngo bugere ku buryo bworoshye cyane nta nenge nyinshi, bugahura n'ibikenewe bikomeye byo gukora ibikoresho bito n'ibiciriritse.

Iyi miterere y'ibikoresho ntiyongera gusa imiterere y'amashanyarazi y'ibikoresho bya SiC, ahubwo inanoza cyane imicungire y'ubushyuhe n'ihindagurika rya mekanike. Kubera iyo mpamvu, mekanike ya SiCOI ikoreshwa cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu, ibice bya radio frequency (RF), sensor za microelectromechanical systems (MEMS), na electron zikoresha ubushyuhe bwinshi. Muri rusange, mekanike ya SiCOI ihuza imiterere idasanzwe ya silicon carbide n'inyungu zo gutandukanya amashanyarazi z'urwego rw'icyuma gikingira, bigatanga urufatiro rwiza ku gisekuru gitaha cy'ibikoresho bya semiconductor bifite imikorere myiza.

Gukoresha wafer ya SiCOI

Ibikoresho by'amashanyarazi bikoresha ingufu

Imashini zikoresha ingufu nyinshi, MOSFET, na diode zifite ingufu nyinshi

Wungukire ku cyuho kinini cya SiC, ingufu nyinshi zo kwangirika, n'ubushyuhe buhamye

Kugabanuka kw'ibura ry'amashanyarazi no kunoza imikorere muri sisitemu zo guhindura amashanyarazi

Ibice bya Radio Frequency (RF)

Transistors na amplifier zifite umuvuduko munini

Ubushobozi buke bwo gukingira indwara bitewe n'urwego rwo gukingira amashanyarazi byongera imikorere ya RF

Bikwiriye itumanaho rya 5G na sisitemu za radar

Sisitemu za Microelectromechanical (MEMS)

Ibyuma bipima ikirere n'ibikoresho bikoresha amashanyarazi bikorera ahantu habi

Ubushobozi bwa mekanike n'ubudakora neza bya shimi byongera igihe cyo kubaho cy'igikoresho

Harimo sensor z'umuvuduko, accelerometers, na gyroscopes

Ibikoresho by'ikoranabuhanga bishyushye cyane

Ikoranabuhanga rikoreshwa mu modoka, mu kirere no mu nganda

Gukora neza mu bushyuhe buri hejuru aho silikoni inanirwa

Ibikoresho by'amafoto

Guhuza ibice by'ikoranabuhanga bya optoelectronic ku bikoresho by'ubushyuhe

Ifasha fotoniki ziri kuri chip hamwe no kunoza imicungire y'ubushyuhe

Ibibazo n'Ibisubizo bya SiCOI wafer

Ikibazo:wafer ya SiCOI ni iki?

A:Wafer ya SiCOI ihagarariye wafer ya Silicon Carbide-on-Insulator. Ni ubwoko bwa substrate ya semiconductor aho urwego rworoshye rwa silicon carbide (SiC) rufatanye ku rundi rwego rukingira, akenshi silicon dioxide (SiO₂) cyangwa rimwe na rimwe safiro. Iyi miterere isa n'iya wafer zizwi cyane za Silicon-on-Insulator (SOI) ariko ikoresha SiC aho gukoresha silicon.