LiTaO3 Wafer 2inch-8inch 10x10x0.5 mm 1sp 2sp kuri 5G / 6G Itumanaho

Ibisobanuro bigufi:

LiTaO3 Wafer (lithium tantalate wafer), ibintu by'ingenzi mu gisekuru cya gatatu cya semiconductor na optoelectronics, ikoresha ubushyuhe bwayo bwo hejuru bwa Curie (610 ° C), umucyo mwinshi (0.4-5.0 μ m), urwego rwo hejuru rwa piezoelectric (d33> 1.500 pC / N), ibikoresho bya kwant. Gukoresha tekinoroji yo guhimba igezweho nko gutwara imyuka yumubiri (PVT) hamwe nubumara bwa chimique (CVD), XKH itanga X / Y / Z-gukata, 42 ° Y-gukata, hamwe na waferi rimwe na rimwe (PPLT) muburyo bwa santimetero 2-8, bikerekana ububobere buke (Ra) <0.5 nm n'ubucucike bwa micropipe <0.1 cm⁻². Serivisi zacu zikubiyemo Fe doping, kugabanya imiti, hamwe na Smart-Cut itandukanijwe itandukanye, ikemura neza imikorere ya optique iyungurura, disiketi ya infragre, hamwe nisoko yumucyo. Ibi bikoresho bitera intambwe muri miniaturizasiya, imikorere yumurongo mwinshi, hamwe nubushyuhe bwumuriro, byihutisha gusimburana murugo mubuhanga bukomeye.

Ohereza imeri kuri twe

Ibiranga

Ibipimo bya tekiniki

Izina	Urwego rwiza-LiTaO3	Urutonde rwamajwi LiTaO3
Axial	Z gukata + / - 0.2 °	36 ° Y gukata / 42 ° Y gukata / X gukata (+ / - 0.2 °)
Diameter	76.2mm + / - 0.3mm / 100 ± 0.2mm	76.2mm + /-0.3mm 100mm + /-0.3mm 0r 150 ± 0.5mm
Indege ya Datum	22mm + / - 2mm	22mm + / -2mm 32mm + / -2mm
Umubyimba	500um + / -5mm 1000um + / -5mm	500um + / -20mm 350um + / -20mm
TTV	≤ 10um	≤ 10um
Ubushyuhe bwa Curie	605 ° C + / - 0,7 ° C (DTAmethod)	605 ° C + / -3 ° C (DTAmethod
Ubwiza bwubuso	Kuringaniza impande ebyiri	Kuringaniza impande ebyiri
Impande	kuzenguruka	kuzenguruka

Ibintu by'ingenzi biranga

1.Imikorere y'amashanyarazi na optique
· Coefficient ya Electro-Optic: r33 igera 30h30 / V (X-gukata), 1.5 × hejuru ya LiNbO3, ituma ultra-yagutse ya electro-optique ihindura (> 40 GHz yumurongo).
· Igisubizo cyagutse: Ikwirakwizwa rya 0.4-5.0 mm (uburebure bwa mm 8), hamwe na ultraviolet yo kwinjiza munsi ya 280 nm, nibyiza kuri laseri ya UV nibikoresho bya dant.
· Coefficient nkeya ya Pyroelectric: dP / dT = 3.5 × 10⁻⁴ C / (m² · K), ituma umutekano uhinduka mubushyuhe bwo hejuru bwa infragre.

2.Ubushyuhe nubukanishi
· Ubushyuhe bwo hejuru cyane: 4.6 W / m · K (X-gukata), inshuro enye za quartz, bikomeza -200-500 ° C gusiganwa ku magare.
· Coefficient yo Kwagura Ubushyuhe Buke: CTE = 4.1 × 10⁻⁶ / K (25-1000 ° C), ijyanye no gupakira silikoni kugirango ugabanye ubushyuhe bwumuriro.
3.Gusuzuma neza no gutunganya neza
· Ubucucike bwa Micropipe: <0.1 cm⁻² (waferi ya santimetero 8), ubucucike bwa dislokisiyo <500 cm⁻² (byagenzuwe hakoreshejwe KOH).
· Ubwiza bwubuso: CMP isizwe na Ra <0.5 nm, yujuje ibyangombwa bya EUV lithographie-ibisabwa.

Ibyingenzi

Indanganturo	Gusaba	Ibyiza bya tekiniki
Itumanaho ryiza	Lazeri 100G / 400G DWDM, moderi ya silicon Photonics	LiTaO3 wafer yagutse ikwirakwiza no gutakaza umuyaga mwinshi (α <0.1 dB / cm) ituma C-band yaguka.
Itumanaho rya 5G / 6G	SAW muyunguruzi (1.8–3.5 GHz), BAW-SMR muyunguruzi	42 ° Y-gukata wafer igera kuri Kt²> 15%, itanga igihombo gito cyo kwinjiza (<1.5 dB) hamwe no kuzunguruka hejuru (> 30 dB).
Ikoranabuhanga rya Quantum	Ikimenyetso kimwe-gifotora, ibipimo byo hasi-bihinduka	Coefficient yo hejuru idafite umurongo (χ (2) = 40 pm / V) hamwe nigipimo gito cyijimye (<100 count / s) byongera kwizerwa kwa kwant.
Kwumva Inganda	Ubushyuhe bwo hejuru cyane, ibyuma bihindura	LiTaO3 wafer ya piezoelectric igisubizo (g33> 20 mV / m) hamwe no kwihanganira ubushyuhe bwinshi (> 400 ° C) bikwiranye nibidukikije bikabije.

Serivisi za XKH

1.Ibikoresho bya Wafer

· Ingano nogukata: waferi ya santimetero 2-8 hamwe na X / Y / Z-gukata, 42 ° Y-gukata, no gukata inguni (± 0.01 ° kwihanganira).

· Kugenzura Doping: Fe, Mg doping ikoresheje uburyo bwa Czochralski (intumbero ya 10¹⁶ - 10¹⁹ cm⁻³) kugirango hongerwe ingufu za electro-optique hamwe nubushyuhe bwumuriro.

2.Iterambere ryiterambere rya tekinoroji
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· Ibihe byigihe (PPLT): Tekinoroji ya Smart-Cut ya wafers ya LTOI, igera kuri m 10 nm mugihe cyateganijwe neza hamwe na quasi-fasi ihuye (QPM) guhinduranya inshuro.

· Kwishyira hamwe kwa Heterogene: Si-LiTaO3 ikomatanya wafers (POI) hamwe no kugenzura umubyimba (300-600 nm) hamwe nubushyuhe bwumuriro bugera kuri 8.78 W / m · K kubushakashatsi bwihuse bwa SAW.

3. Sisitemu yo gucunga neza
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· Kwipimisha kugeza ku ndunduro: Raman spectroscopy (verisiyo ya polytype), XRD (kristu), AFM (morfologiya yo hejuru), hamwe no gupima uburinganire (Δn <5 × 10⁻⁵).

4.Imfashanyo yo gutanga amasoko yisi yose
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· Ubushobozi bw'umusaruro: Ibisohoka buri kwezi> 5.000 wafer (8-cm: 70%), hamwe no gutanga amasaha 48 byihutirwa.

· Logistique Network: Igipfukisho mu Burayi, Amerika y'Amajyaruguru, na Aziya-Pasifika ukoresheje ibicuruzwa byo mu kirere / inyanja hamwe n'ububiko bugenzurwa n'ubushyuhe.