ubwoko bwa p 4H/6H-P 3C-N Ubwoko bwa SIC substrate 4inch 〈111〉± 0.5° Zero MPD

Ibisobanuro bigufi:

Substrate ya P-type 4H/6H-P 3C-N SiC, ifite santimetero 4 ifite icyerekezo cya 〈111〉± 0.5° na Zero MPD (Micro Pipe Defect), ni ibikoresho bya semiconductor bifite imikorere myiza byagenewe gukora ibikoresho by'ikoranabuhanga bigezweho. Izwiho imikorere myiza y'ubushyuhe, voltage nyinshi yo kwangirika, no kurwanya ubushyuhe bwinshi n'ingese, iyi substrate ni nziza cyane ku bikoresho by'ikoranabuhanga bikoresha ingufu na RF. Intera ya Zero MPD ihamya inenge nke, ishimangira ko ibikoresho bifite imikorere myiza kandi ihamye bikoresha ingufu nyinshi. Intera yayo nyayo ya 〈111〉± 0.5° ituma habaho guhuza neza mu gihe cyo gukora, bigatuma ikwiriye ibikorwa binini byo gukora. Iyi substrate ikoreshwa cyane mu bikoresho by'ikoranabuhanga bifite ubushyuhe bwinshi, voltage nyinshi, n'ibikoresho bifite frequency nyinshi, nka converters z'amashanyarazi, inverters, n'ibice bya RF.


Ibiranga

4H/6H-P Ubwoko bwa SiC Composite Substrates Imbonerahamwe isanzwe y'ibipimo

4 Silikoni y'umurambararo wa santimeteroKarubide (SiC) Substrate Ibisobanuro

 

Icyiciro Nta musaruro wa MPD

Icyiciro (Z) Icyiciro)

Umusaruro Usanzwe

Icyiciro (P) Icyiciro)

 

Impamyabumenyi y'ikinyoma (D Icyiciro)

Ingano 99.5 mm ~ 100.0 mm
Ubunini 350 μm ± 25 μm
Icyerekezo cya Wafer Umurongo utari hagati: 2.0°-4.0° werekeza [11]2(-)0] ± 0.5° kuri 4H/6H-P, Oumurongo wa n:〈111〉± 0.5° kuri 3C-N
Ubucucike bw'imiyoboro mito 0 cm-2
Ubushobozi bwo kwirinda ubwoko bwa p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
ubwoko bwa n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Icyerekezo cy'ibanze cy'ubugari 4H/6H-P -

{1010} ± 5.0°

3C-N -

{110} ± 5.0°

Uburebure bw'ibanze bw'ikiraro mm 32.5 ± mm 2.0
Uburebure bwa kabiri bw'ikiraro 18.0 mm ± 2.0 mm
Icyerekezo cya kabiri cy'icyitegererezo Silicon ireba hejuru: 90° CW. uvuye kuri Prime flat±5.0°
Kutagaragaza Edge mm 3 mm 6
LTV/TTV/Umuheto /Umupfundo ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ubukana Igiporuniya Ra≤1 nm
CMP Ra≤0.2 nm Ra≤0.5 nm
Imyanya y'inkombe iterwa n'urumuri rwinshi Nta na kimwe Uburebure buhuriweho ≤ mm 10, uburebure bumwe ≤ mm 2
Amasahani ya Hex ashingiye ku rumuri rwinshi Agace k'ikusanyirizo ≤0.05% Agace k'ikusanyirizo ≤0.1%
Uduce twa Polytype dukoresheje urumuri rwinshi Nta na kimwe Agace k'ikusanyirizo ≤3%
Ibikubiye muri karuboni igaragara Agace k'ikusanyirizo ≤0.05% Agace k'ikusanyirizo ≤3%
Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi Nta na kimwe Uburebure buhuriweho ≤1 × umurambararo wa wafer
Umucyo w'ubushyuhe bwinshi n'ubukana Nta na kimwe cyemewe gifite ubugari n'ubujyakuzimu bwa ≥0.2mm 5 byemewe, ≤1 mm buri kimwe
Kwanduzwa n'ubuso bwa silicon bitewe n'ubukana bwinshi Nta na kimwe
Gupfunyika Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari

Inyandiko:

※Imipaka y'ubusembwa ikoreshwa ku buso bwose bwa wafer uretse ahantu hadakoreshejwe inkombe. # Imivuno igomba kugenzurwa ku buso bwa Si gusa.

Substrate ya P-type 4H/6H-P 3C-N ifite icyerekezo cya 4-inch SiC ifite icyerekezo cya 〈111〉± 0.5° na Zero MPD grade ikoreshwa cyane mu bikorwa by'ikoranabuhanga bigezweho. Uburyo bwayo bwiza bwo gutwara ubushyuhe n'amashanyarazi menshi bituma iba nziza ku bikoresho by'ikoranabuhanga bikoresha ingufu, nka switch zifite amashanyarazi menshi, inverters, na power converters, bikora mu bihe bikomeye. Byongeye kandi, ubushobozi bw'iyi substrate mu guhangana n'ubushyuhe bwinshi n'ingufu butuma ikora neza mu bidukikije bikomeye. 〈111〉± 0.5° irushaho kunoza uburyo ikora, bigatuma ikoreshwa neza n'ibikoresho bya RF na porogaramu zikoresha frequency nyinshi, nka sisitemu za radar n'ibikoresho by'itumanaho bidafite insinga.

Ibyiza by'ibice bya N-type SiC bigizwe na:

1. Ubushyuhe bwinshi: Ituma ubushyuhe bugabanuka neza, bigatuma ikoreshwa mu bidukikije birimo ubushyuhe bwinshi n'ingufu nyinshi.
2. Umuvuduko mwinshi w'amashanyarazi: Ituma habaho imikorere myiza mu bikorwa bifite ingufu nyinshi nka converters na inverters.
3. Zero MPD (Impinduka mu miyoboro mito): Itanga icyizere cy'uko hari inenge nke, itanga umutekano n'ubwizigirwa bwinshi mu bikoresho by'ikoranabuhanga by'ingenzi.
4. Kurwanya ingese: Iramba mu bidukikije bikomeye, ituma ikora neza igihe kirekire mu bihe bigoye.
5. Kwerekeza neza 〈111〉± 0.5°: Bituma habaho guhuza neza mu gihe cyo gukora, bikanoza imikorere y'igikoresho mu bikoresho bifite umurongo wa frequency nyinshi na RF.

 

Muri rusange, substrate ya P-type 4H/6H-P 3C-N ya santimetero 4 ya SiC ifite icyerekezo cya 〈111〉± 0.5° hamwe n'icyerekezo cya Zero MPD ni ibikoresho bikora neza cyane ku bikoresho by'ikoranabuhanga bigezweho. Uburyo bwayo bwiza bwo gutwara ubushyuhe n'amashanyarazi menshi bituma iba nziza cyane ku bikoresho by'ikoranabuhanga nk'ibisimburana bifite voltage nyinshi, inverters, na converters. Intera ya Zero MPD ituma habaho inenge nke, itanga icyizere n'ubudahangarwa mu bikoresho by'ingenzi. Byongeye kandi, ubushobozi bwa substrate bwo kurwanya ingese n'ubushyuhe bwinshi butuma iramba mu bidukikije bikomeye. Icyerekezo nyacyo cya 〈111〉± 0.5° gituma habaho icyerekezo nyacyo mu gihe cyo gukora, bigatuma ikwiriye cyane ibikoresho bya RF n'ibikoresho bifite frequency nyinshi.

Ishusho irambuye

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