p-ubwoko bwa 4H / 6H-P 3C-N UBWOKO BWA SIC substrate 4inch 〈111〉 ± 0.5 ° Zeru MPD

p-ubwoko bwa 4H / 6H-P 3C-N TYPE SIC substrate 4inch 〈111〉 ± 0.5 ° Zeru MPD Ishusho Yerekanwe

Ibisobanuro bigufi:

Ubwoko bwa P-4H / 6H-P 3C-N ubwoko bwa SiC substrate, santimetero 4 hamwe na 〈111〉 ± 0.5 ° icyerekezo hamwe na Zero MPD (Micro Pipe Defect), ni ibikoresho bya semiconductor ikora cyane bigenewe ibikoresho bya elegitoroniki bigezweho. inganda. Azwiho kuba afite ubushyuhe bwiza cyane, imbaraga zo kumeneka cyane, hamwe no guhangana nubushyuhe bwo hejuru no kwangirika, iyi substrate nibyiza kubikoresho bya elegitoroniki nimbaraga za RF. Urwego MPD ya Zeru yemeza inenge nkeya, ikemeza kwizerwa no gushikama mubikoresho bikora neza. Icyerekezo cyacyo 〈111〉 ± 0.5 ° icyerekezo cyemerera guhuza neza mugihe cyo guhimba, bigatuma gikwira mubikorwa binini byo gukora. Iyi substrate ikoreshwa cyane mubushyuhe bwo hejuru, voltage nyinshi, hamwe nibikoresho bya elegitoroniki byihuta cyane, nka power power, inverters, hamwe nibice bya RF.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

4H / 6H-P Ubwoko bwa SiC Igizwe na Substrates Imbonerahamwe isanzwe

4 Uburebure bwa diameter SiliconCarbide (SiC) Substrate Ibisobanuro

Icyiciro			Umusaruro wa MPD Zeru Icyiciro (Z. Icyiciro)	Umusaruro usanzwe Icyiciro (P. Icyiciro)	Dummy Grade (D Icyiciro)
Diameter			99,5 mm ~ 100.0 mm
Umubyimba			350 mm ± 25 mm
Icyerekezo cya Wafer			Off axis: 2.0 ° -4.0 ° yerekeza kuri [112(-)0] ± 0.5 ° kuri 4H / 6H-P, On umurongo: 〈111〉 ± 0.5 ° kuri 3C-N
Ubucucike bwa Micropipe			0 cm-2
Kurwanya	p-ubwoko bwa 4H / 6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ubwoko bwa 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Icyerekezo Cyibanze		4H / 6H-P	- 1010} ± 5.0 °
		3C-N	- {110} ± 5.0 °
Uburebure bwibanze			32,5 mm ± 2,2 mm
Uburebure bwa kabiri			18.0 mm ± 2,2 mm
Icyerekezo cya kabiri cya Flat			Silicon ireba hejuru: 90 ° CW. kuva muri etage±5.0 °
Guhezwa			Mm 3		Mm 6
LTV / TTV / Umuheto / Intambara			≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm		≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
Ubugome			Igipolonye Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi			Nta na kimwe		Uburebure bwa mm 10 mm, uburebure bumwe mm2 mm
Isahani ya Hex Kumucyo mwinshi			Agace kegeranye ≤0.05%		Agace kegeranye ≤0.1%
Uturere twa Polytype Kumucyo mwinshi			Nta na kimwe		Agace kegeranye ≤3%
Amashusho ya Carbone			Agace kegeranye ≤0.05%		Agace kegeranye ≤3%
Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo			Nta na kimwe		Uburebure bwuzuye≤1 × wafer diameter
Imipira yo ku mpande hejuru yumucyo mwinshi			Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure		5 byemewe, mm1 mm imwe imwe
Ubuso bwa Silicon Yanduye Kubwinshi			Nta na kimwe
Gupakira			Multi-wafer Cassette cyangwa Igikoresho kimwe cya Wafer

Inyandiko:

Limits Imipaka ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. # Igishushanyo kigomba kugenzurwa kuri Si isura gusa.

Ubwoko bwa P-4H / 6H-P 3C-N ubwoko bwa 4-santimetero SiC substrate hamwe na 〈111〉 ± 0.5 ° icyerekezo hamwe na Zero MPD ikoreshwa cyane mubikorwa bya elegitoroniki bikora cyane. Ubushuhe buhebuje bwumuriro hamwe na voltage yameneka cyane bituma biba byiza kuri electronics power, nka voltage nini cyane, inverter, hamwe na power power, ikora mubihe bikabije. Byongeye kandi, substrate irwanya ubushyuhe bwinshi hamwe na ruswa itanga imikorere ihamye mubidukikije bikaze. Icyerekezo 〈111〉 ± 0.5 ° icyerekezo cyongerera imbaraga inganda, bigatuma gikoreshwa mubikoresho bya RF hamwe na progaramu zikoresha inshuro nyinshi, nka sisitemu ya radar nibikoresho byitumanaho bidafite umugozi ..

Ibyiza bya N-bwoko bwa SiC igizwe na substrate harimo:

1.
2.
3. Zero MPD (Micro Pipe Defect) Icyiciro: Yemeza inenge nkeya, itanga ituze kandi yizewe cyane mubikoresho bikomeye bya elegitoroniki.
4. Kurwanya ruswa: Kuramba mubidukikije bikaze, byemeza imikorere yigihe kirekire mubihe bisabwa.
5. Ibisobanuro 〈111〉 ± 0.5 ° Icyerekezo: Emerera guhuza neza mugihe cyo gukora, kunoza imikorere yibikoresho mumashanyarazi menshi hamwe na RF.

Muri rusange, P-ubwoko bwa 4H / 6H-P 3C-N ubwoko bwa 4-santimetero SiC substrate hamwe na 〈111〉 ± 0.5 ° icyerekezo hamwe na Zero MPD ni ibikoresho-byiza cyane nibikoresho byiza bya elegitoroniki. Ubushuhe buhebuje bwumuriro hamwe na voltage yameneka cyane bituma itunganyirizwa ingufu za elegitoronike nka voltage nini cyane, inverter, hamwe na reveri. Urwego MPD ya Zeru itanga inenge nkeya, itanga kwizerwa no gutuza mubikoresho bikomeye. Byongeye kandi, substrate irwanya ruswa nubushyuhe bwo hejuru itanga igihe kirekire mubidukikije. Icyerekezo 〈111〉 ± 0.5 ° icyerekezo cyemerera guhuza neza mugihe cyo gukora, bigatuma gikwiranye cyane nibikoresho bya RF hamwe na progaramu nyinshi.