SiC
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Karubide ya Silicon (SiC) Ifite Agakoresho Gasa na Garama 10 × 10
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ya MOS cyangwa SBD
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SiC Epitaxial Wafer ku bikoresho by'amashanyarazi – 4H-SiC, ubwoko bwa N, Ubucucike buke
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4H-N Ubwoko bwa SiC Epitaxial Wafer High Voltage High Frequency
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Udupira twa Silicon Carbide Wafers twa santimetero 3 dukingira ubushyuhe bwinshi (HPSl)
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4H-N 8 santimetero SiC substrate wafer Silicon Carbide Dummy Research grade 500um ubugari
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4H-N/6H-N SiC Wafer Research production Dummy grade Dia150mm Silicon carbide substrate
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Wafer ipfutse cyangwa irangi, wafer ya safiro, wafer ya silikoni, wafer ya SiC, 2cm 4cm 6cm, Ubunini bwa zahabu 10nm 50nm 100nm
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SiC wafer 4H-N 6H-N HPSI 4H-igice 6H-igice 4H-P 6H-P 3C ubwoko bwa 2inch 3inch 4inch 6inch 8inch
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Substrate ya silikoni ya silikoni ya santimetero 2 6H-N Ubwoko: 0.33mm 0.43mm Isukura impande ebyiri: Ingufu nyinshi zikoreshwa n'ubushyuhe bwinshi. Ikoreshwa ry'ingufu nke.
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SiC substrate ifite ubugari bwa santimetero 3 na 350 umubyimba wa HPSI ubwoko bwa Prime Grade Dummy Grade
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Silicon Carbide SiC Ingot 6inch N ubwoko bwa Dummy/prime grade uburebure bushobora kuba bwarahinduwe