SiC
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6inch SiC Epitaxiy wafer N/P yo mu bwoko bwa N/P yemerwa mu buryo bwihariye
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Ingano ya Dia150mm 4H-N 6inch SiC substrate ikorwa n'urwego rw'ibishushanyo mbonera
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Wafer ya SiC Epi ya santimetero 4 kuri MOS cyangwa SBD
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Ingot ya SiC ya 2inch Dia50.8mmx10mmt 4H-N monocrystal
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Wafer ya SiC ya 200mm ifite uburebure bwa 4H-N ifite uburebure bwa santimetero 8
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Imbuto ya 4H-N Dia205mm SiC ikomoka mu Bushinwa P na D grade Monocrystaline
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Udupira twa SiC twa santimetero 4, udupira twa 6H dukingira uduce duto, dukozwe mu bushakashatsi, kandi dufite imiterere y'agace gato.
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Wafer ya HPSI SiC ya santimetero 6.5. Wafer ya Silicon Carbide iteye isoni cyane ya SiC
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4inch Semi-insulting SiC wafers HPSI SiC substrate Prime Production grade
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Wafer ya Silicon Carbide ifite santimetero 3 na santimetero 76.2, ifite uburebure bwa 4H, ifite uburebure bwa silicone, ifite uburebure bwa 25cm, ifite uburebure bwa 25cm, ifite uburebure bwa 25cm.
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Ibikoresho bya SiC bya santimetero 3 bya Dia76.2mm bya HPSI Prime Research na Dummy grade
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4H-semi HPSI 2inch SiC substrate wafer Production Dummy Research grade