SiC
-
Uduce duto twa SiC twa santimetero 2, uduce duto twa SiC twa santimetero 6 cyangwa 4, dupima metero 50.8
-
Uduce twa Silikoni Carbide twa santimetero 2, uduce twa SiC two mu bwoko bwa 6H cyangwa 4H N cyangwa uduce duto twa SiC dukingira
-
4H-N 4 inch SiC substrate wafer Silicon Carbide Production Dummy Research grade
-
Wafers za Silikoni Carbide SiC za santimetero 6 150 zo mu bwoko bwa 4H-N zo gukora ubushakashatsi ku mikorere ya MOS cyangwa SBD n'ubwoko bwa Dummy grade
-
Ingano y'ubushakashatsi bw'udukoresho tw'imashini zitwara amashanyarazi ya santimetero 8 na 200 za SiC Wafer 4H-N
-
Uduce twa Silikoni Carbide twa santimetero 2, uduce twa SiC two mu bwoko bwa 6H cyangwa 4H N cyangwa uduce duto twa SiC dukingira