Substrate
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4H-N 8 cm SiC substrate wafer Silicon Carbide Dummy Ubushakashatsi urwego 500um
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4H-N / 6H-N SiC Wafer Yongeye gushakisha umusaruro Dummy urwego Dia150mm Silicon karbide substrate
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ubwoko bwumusaruro urwego 500um
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Dia300x1.0mmt Ubunini bwa safiro Wafer C-Indege SSP / DSP
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8 cm 200mm Sapphire substrate safiro wafer yoroheje umubyimba 1SP 2SP 0.5mm 0,75mm
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8 cm SiC silicon karbide wafer 4H-N ubwoko bwa 0.5mm yumusaruro wubushakashatsi urwego rwabigenewe rusize neza
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HPSI SiC wafer dia: uburebure bwa 3inch: 350um ± 25 µm kuri Electronics
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Crystal imwe imwe Al2O3 99,999% Dia200mm ya safiro wafers 1.0mm 0,75mm
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156mm 159mm 6 santimetero Safiro Wafer kubitwaraC-Indege DSP TTV
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C / A / M axis ya santimetero 4 za safiro wafers imwe ya kristu ya Al2O3, SSP DSP ikomeye cyane ya safiro substrate
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3inch Ubuziranenge Bwinshi Semi-Gukingura （HPSI） SiC wafer 350um Dummy urwego rwibanze
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P-ubwoko bwa SiC substrate SiC wafer Dia2inch ibicuruzwa bishya