Inzu ntoya
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Wafer ya santimetero 12 ya 4H-SiC ikoreshwa mu birahuri bya AR
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Ibikoresho byo gucunga ubushyuhe bivanze na diyama n'umuringa
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HPSI SiC Wafer ≥90% Ingano y'Ikoranabuhanga ryo Gutuma Indorerwamo za AI/AR zitangwa
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Indabyo za Silicon Carbide (SiC) zirinda ubushyuhe bwinshi ku birahuri bya Ar
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Uduce twa Epitaxial twa 4H-SiC twa MOSFETs zifite Voltage nyinshi (100–500 μm, santimetero 6)
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SICOI (Silicon Carbide kuri Insulator) Wafers SiC Film KURI Silicon
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Ifu ya Safiro ifite ibara ry'umukara ryihariye rikoreshwa mu gutunganya
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Imbuto ya Safiro ifite ishusho y'urutare rwa kare – Ifite ishusho y'uburyo bwo gukura kwa Safiro ikoze mu buryo bw'umwimerere
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Karubide ya Silicon (SiC) Ifite Agakoresho Gasa na Garama 10 × 10
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ya MOS cyangwa SBD
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SiC Epitaxial Wafer ku bikoresho by'amashanyarazi – 4H-SiC, ubwoko bwa N, Ubucucike buke
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4H-N Ubwoko bwa SiC Epitaxial Wafer High Voltage High Frequency