Inzu ntoya
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InSb wafer ifite uburebure bwa santimetero 2 na santimetero 3, icyerekezo cya Ntype P 111 100 ku bikoresho bipima infrared
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Indium Antimonide (InSb) wafers N ubwoko bwa P ubwoko bwa Epi butetse neza budafite aho bubohoye Te doped cyangwa Ge doped 2inch 3inch 4inch Ubugari Indium Antimonide (InSb) wafers
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SiC wafer 4H-N 6H-N HPSI 4H-igice 6H-igice 4H-P 6H-P 3C ubwoko bwa 2inch 3inch 4inch 6inch 8inch
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Uburyo bwa safiro ingot 3inch 4inch 6inch Monocrystal CZ KY bushobora guhindurwa
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Substrate ya silikoni ya silikoni ya santimetero 2 6H-N Ubwoko: 0.33mm 0.43mm Isukura impande ebyiri: Ingufu nyinshi zikoreshwa n'ubushyuhe bwinshi. Ikoreshwa ry'ingufu nke.
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GaAs ifite imbaraga nyinshi ya epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yo kuvura hakoreshejwe laser
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GaAs laser epitaxial wafer ifite santimetero 4 na santimetero 6 VCSEL vertical cavity surface emission laser wavelength 940nm single junction
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Imashini ipima urumuri rwa APD ya InP epitaxial wafer substrate ifite uburebure bwa santimetero 2.5 na santimetero 3.5, ikoresha ikoranabuhanga rya APD rikoreshwa mu gutumanaho rya fiber optic cyangwa LiDAR.
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Impeta ya safiro ikozwe mu bikoresho bya safiro bikozwe mu buryo bwa siporo, ubukana bwa Mohs bugaragara kandi bushobora guhindurwa bwa 9
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impeta ya safiro yuzuyemo impeta ya safiro yakozwe mu bikoresho bya safiro bibonerana byakorewe muri laboratwari
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Ingot ya Safira dia 4inch × 80mm Monocrystalline Al2O3 99.999% Crystal imwe
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Ijisho rya Sapphire Prism rya Sapphire ribonerana cyane Al2O3 BK7 JGS1 JGS2 Igikoresho cy'amashusho