Ibikoresho byo gukata Wafer bya santimetero 4-12 mu gutunganya Wafers za Safiro/SiC/Si

Ibisobanuro bigufi:

Ibikoresho byo Kugabanya Ingufu za Wafer ni igikoresho cy'ingenzi mu gukora ibikoresho bya semiconductor mu kugabanya ubugari bwa wafer kugira ngo habeho imicungire y'ubushyuhe, imikorere y'amashanyarazi, no gukoresha neza ibipfunyika. Ibi bikoresho bikoresha ikoranabuhanga ryo gusya, gusiga irangi rya shimi (CMP), n'ikoranabuhanga ryo gusya ryumye/ritose kugira ngo bigerweho kugenzura ubugari buhanitse cyane (± 0.1 μm) no guhuza na wafer za santimetero 4–12. Sisitemu zacu zishyigikira icyerekezo cya C/A-plane kandi zagenewe porogaramu zigezweho nka 3D IC, ibikoresho by'amashanyarazi (IGBT/MOSFETs), na sensor za MEMS.

XKH itanga ibisubizo byuzuye, birimo ibikoresho byihariye (gutunganya wafer ya santimetero 2–12), kunoza imikorere (ubucucike bw'inenge <100/cm²), n'amahugurwa ya tekiniki.

Ohereza imeri kuri twe

Ibiranga

Ihame ry'imikorere

Uburyo bwo kugabanya ifu y'umugati bukora mu byiciro bitatu:
Gusya nabi: Ipine ya diyama (ingano y'uruti rwa 200–500 μm) ikuraho 50–150 μm y'ibikoresho kuri 3000–5000 rpm kugira ngo igabanye ubunini vuba.
Gusya neza: Ipine nto (ingano y'umugozi 1–50 μm) igabanya ubunini kugeza kuri 20–50 μm kuri <1 μm/s kugira ngo igabanye kwangirika kw'ubutaka.
Gusukura (CMP): Igikoresho cy'ubutabire n'imashini gikuraho ibyangiritse bisigaye, bigatuma Ra <0.1 nm igera kuri.

Ibikoresho Bihuye

Silikoni (Si): Isanzwe ku dupfunyika twa CMOS, twagabanijwe kugeza kuri 25 μm kugira ngo dushyirwe mu buryo bwa 3D.
Karubide ya Silicon (SiC): Ikenera amapine ya diyama yihariye (80% ya diyama) kugira ngo ubushyuhe bukomeze.
Safiro (Al₂O₃): Yagabanijwe kugeza kuri 50 μm kugira ngo ikoreshwe muri UV LED.

Ibice by'ingenzi bya sisitemu

1. Sisitemu yo gusya
Imashini yo gusya ifite umurongo ubiri: Ihuza imashini isya neza mu buryo bunini, ikagabanya igihe cyo gusya ku kigero cya 40%.
Ingufu zo mu kirere zikoresha ikirere: 0–6000 rpm hamwe n'umuvuduko wa radial wa <0.5 μm.

2. Sisitemu yo gufata Wafer
Icyuma gifunga: >50 N ifite ubushobozi bwo gufata neza aho giherereye ±0.1 μm.
Ikoresha Robotic Hand: Itwara wafers za santimetero 4–12 ku muvuduko wa mm 100/s.

3. Sisitemu yo kugenzura
Interferometry ya Laser: Gukurikirana ubunini mu gihe nyacyo (resolution 0.01 μm).
Feedforward iyobowe na AI: Ihanura ko amapine azashira kandi igahindura ibipimo mu buryo bwikora.

4. Gukonjesha no Gusukura
Isuku ya Ultrasonic: Ikuraho uduce turenze 0.5 μm hamwe n'ubuhanga bwa 99.9%.
Amazi yakuwemo inzoga: Akonjesha wafer kugeza kuri <5°C hejuru y'ikirere.

Ibyiza by'ingenzi

1. Ubuziranenge bwo hejuru cyane: TTV (Ihindagurika ry'ubunini bwose) <0.5 μm, WTW (Ihindagurika ry'ubunini buri hagati ya Wafer) <1 μm.

2. Guhuza ibikorwa byinshi: Bihuza gusya, CMP, na plasma etching mu mashini imwe.

3. Guhuza ibikoresho:
Silikoni: Kugabanuka k'ubunini kuva kuri 775 μm kugeza kuri 25 μm.
SiC: Igera kuri <2 μm TTV kuri porogaramu za RF.
Wafers za Doped: Wafers za InP za fosifore zifite fosifore zifite resistivity drift <5%.

4. Smart Automation: Guhuza MES bigabanya amakosa y'abantu ku kigero cya 70%.

5. Ingufu zikoreshwa neza: 30% by'ikoreshwa ry'ingufu binyuze mu gufunga feri.

Porogaramu z'ingenzi

1. Gupakira mu buryo bugezweho
• 3D ICs: Kugabanya umugozi bifasha gushyira hamwe ibice bya logique/memory (urugero, HBM stacks), kugera ku muvuduko wa bandwidth uri hejuru ya 10 × no kugabanya ikoreshwa ry'ingufu za 50% ugereranije n'ibisubizo bya 2.5D. Ibikoresho bishyigikira guhuza kwa hybrid na TSV (Through-Silicon Via), ingenzi cyane kuri poroseseri za AI / ML zikenera <10 μm interconnect pitch. Urugero, wafers za santimetero 12 zagabanijwe kugeza kuri 25 μm zemerera gushyira hamwe ibice 8+ mu gihe zigumana <1.5% warpage, ingenzi kuri sisitemu za LiDAR z'imodoka.

• Gupakira Fan-Out: Mu kugabanya ubugari bwa wafer kugeza kuri 30 μm, uburebure bwa interconnect bugabanywaho 50%, bigabanyiriza gutinda kwa signal (<0.2 ps/mm) kandi bigafasha chiplets za 0.4 mm ku ma SoCs akoresha mobile. Iyi gahunda ikoresha algorithms zo gusya ziterwa n'stress kugira ngo hirindwe warpage (>50 μm TTV control), ikerekana ko ari inyangamugayo mu gukoresha RF ikoresha frequency yo hejuru.

2. Ikoranabuhanga rikoresha ingufu
• IGBT Modules: Kugabanya ubushyuhe kugeza kuri 50 μm bigabanya ubushyuhe bugera kuri <0.5°C/W, bigatuma MOSFET za SiC za 1200V zikora ku bushyuhe bwa 200°C. Ibikoresho byacu bikoresha uburyo bwinshi bwo gusya (ubushyuhe bukabije: 46 μm grit → buto: 4 μm grit) kugira ngo bikureho kwangirika munsi y'ubutaka, bigatuma habaho imikorere y'ubwirinzi ku bushyuhe burenze 10.000. Ibi ni ingenzi ku byuma bihindura amashanyarazi, aho wafer za SiC zifite ubugari bwa 10 μm zinoza umuvuduko wo guhinduranya ho 30%.
• Ibikoresho by'amashanyarazi bya GaN-on-SiC: Gugabanya umugozi kugeza kuri 80 μm byongera uburyo bwo kugenda kwa electron (μ > 2000 cm²/V·s) kuri 650V GaN HEMTs, bigabanya igihombo cyo gutwara umuvuduko ku kigero cya 18%. Iyi nzira ikoresha uburyo bwa laser-assisted dicing kugira ngo hirindwe ko umuvuduko ucika mu gihe cyo gukata, bigatuma habaho <5 μm edge chipping kuri amplifiers za RF power.

3. Ikoranabuhanga rya Optoelectronics
• Amatara ya GaN-on-SiC: Amatara ya safiro ya 50 μm yongera ubushobozi bwo gukura urumuri (LEE) kugeza kuri 85% (ugereranyije na 65% kuri wafers za 150 μm) mu kugabanya gufatisha photon. Uburyo bwo kugenzura TTV bw'ibikoresho byacu (<0.3 μm) butuma habaho ikwirakwizwa rya LED rimwe kuri wafers za santimetero 12, bikaba ari ingenzi cyane ku matara ya Micro-LED asaba ko ubunini bw'ubunini bwa wavelength bugera kuri <100nm.
• Silicon Photonics: Udupira twa silicon dufite ubugari bwa 25μm dutuma habaho kugabanuka kwa dB/cm 3 mu dupira tw’amajwi, bikaba ari ingenzi kuri transceivers za optique za 1.6 Tbps. Iyi nzira ihuza CMP yoroshya kugira ngo igabanye ubukana bw’ubuso kuri Ra <0.1 nm, yongera ubushobozi bwo guhuza ku kigero cya 40%.

4. Ibikoresho bya MEMS
• Ibipimo by'umuvuduko: 25 μm silicon wafers zigera kuri SNR >85 dB (ugereranyije na 75 dB kuri 50 μm wafers) binyuze mu kongera ubushobozi bwo kwimuka. Sisitemu yacu yo gusya ifite umurongo ubiri ikemura ibibazo by'imihangayiko, bigatuma ubushyuhe bwa <0.5% buzamuka hejuru ya -40°C bukagera kuri 125°C. Porogaramu zirimo kumenya impanuka z'imodoka no gukurikirana imikorere ya AR/VR.

• Ibikoresho byo gupima umuvuduko: Kugabanya umuvuduko kugeza kuri 40 μm bituma 0–300 bar piming rangesna <0.1% FS hysteresis. Hakoreshejwe uburyo bw'agateganyo bwo gufatanya (ibirahure), iyi gahunda yirinda kuvunika kwa wafer mu gihe cyo gushushanya inyuma, bigatuma habaho kwihanganira umuvuduko ukabije wa <1 μm kuri sensors za IoT zo mu nganda.

• Guhuza Tekiniki: Ibikoresho byacu byo gukata wafer bihuza ibyuma bisya, CMP, na plasma kugira ngo bikemure ibibazo bitandukanye by'ibikoresho (Si, SiC, Safiro). Urugero, GaN-on-SiC isaba hybrid grinding (amapine ya diyama + plasma) kugira ngo ihuze ubukana n'ubwiyongere bw'ubushyuhe, mu gihe sensor za MEMS zisaba ubukana bw'ubuso bwa sub-5 nm binyuze mu gupolisha CMP.

• Ingaruka ku nganda: Mu gukoresha wafers zoroshye kandi zikora neza, iri koranabuhanga ritanga udushya mu bikoresho bya AI, modules za 5G mmWave, n'ibikoresho by'ikoranabuhanga byoroshye, hamwe n'ubushobozi bwo kwihanganira TTV <0.1 μm ku bikoresho bishobora gupfunyika na <0.5 μm ku bikoresho bya LiDAR by'imodoka.

Serivisi za XKH

1. Ibisubizo byihariye
Imiterere ishobora kwaguka: Imiterere y'icyumba gifite santimetero 4–12 hamwe n'uburyo bwo gupakira no gupakurura ibikoresho mu buryo bwikora.
Inkunga yo gukoresha imiti igabanya ubushyuhe: Uburyo bwihariye bwo guteka kuri kristu za Er/Yb na wafer za InP/GaAs.

2. Inkunga kuva ku mpera kugeza ku mpera
Iterambere ry'Ibikorwa: Igerageza ry'ubuntu rikorwa neza.
Amahugurwa ku Isi: Amahugurwa ya tekiniki buri mwaka ku bijyanye no kubungabunga no gukemura ibibazo.

3. Gutunganya ibikoresho byinshi
SiC: Kugabanya umusemburo wa Wafer kugeza kuri 100 μm hamwe na Ra <0.1 nm.
Safiro: Ubugari bwa 50μm ku madirishya ya laser ya UV (transmittance >92%@200 nm).

4. Serivisi zo kongera agaciro
Ibikoresho Bikoreshwa: Amapine ya diyama (wafers zirenga 2000/ubuzima) na slurry za CMP.

Umwanzuro

Ibi bikoresho byo gukata wafer bitanga ubwiza buhanitse mu nganda, ikoranabuhanga rigezweho, kandi bikoresha ikoranabuhanga rigezweho, bigatuma biba ngombwa cyane mu guhuza 3D no gukoresha amashanyarazi. Serivisi za XKH zirambuye—kuva ku guhindura ibintu kugeza ku gutunganya nyuma—bituma abakiriya bagera ku musaruro mwiza kandi w’indashyikirwa mu nganda zikora ibikoresho bya semiconductor.