12 Inch Sic Substrate Silicon Carbide Yibanze Diameter 300mm Ingano nini 4h-n ikwiranye no gutandukana kwinshi

12 Inch Sic Substrate Silicon Carbide Yibanze Icyiciro cya 300m Ingano nini 4h-n ikwiye kubikoresho byinshi byubushyuhe

Ibisobanuro bigufi:

Ikimenyetso cya santimetero 12 ya silicon) ni ubunini bunini, ibikoresho byo mu rwego rwo hejuru, ibikoresho bifatika bivugwa muri kristu imwe ya silicon. Silicon Carbide (sic) ni itsinda ryagutse rya gap semiconductor ifite amashanyarazi meza cyane, ubushyuhe na bunini kandi bukoreshwa cyane mu gukora ibikoresho bya elegitoroniki murwego rwo hejuru, inshuro nyinshi nubushyuhe bwinshi. Umukinnyi wa kabiri (300mm) ni ukugaragaza amajonjora ya tekinoroji ya silicon Carbide, ishobora kunoza imikorere yo gukora cyane no kugabanya ibiciro.

Ohereza imeri kuri twe

Ibisobanuro birambuye

Ibicuruzwa

1. Imyitwarire myiza yubushyuhe: Imyitwarire yubushyuhe bwa Carbide ya Silicon irarenze inshuro 3 za silicon, zikwiranye no gutandukana kwinshi mubikoresho.

2. Gusenyuka cyane Imipaka Imbaraga: Imbaraga zo kumurima ni inshuro 10 za silicon, zibereye gusaba umuvuduko mwinshi.

3.Gagap band: yose bande: bande ni 3.26ev (4h-sic), bikwiranye n'ubushyuhe bwo hejuru no gusaba byinshi.

4. Gukomera kwinshi: MOHS Ikomeye ni 9.2, isegonda gusa kuri diyama, kwambarwa neza kwambara hamwe nimbaraga zubukanishi.

6. Ingano nini: santimetero 12 (300mm), kunoza imikorere yumusaruro, kugabanya igiciro.

7.Ubucucike bworoshye: Ubwiza burebure bwa Crystal Gukura Ikoranabuhanga ryo Gukura neza no guhuzagurika.

Ibicuruzwa Icyiciro cyo gusaba

1.. Imbaraga za elegitoroniki:

Mosfets: ikoreshwa mubinyabiziga by'amashanyarazi, moteri yinganda no guhindura imbaraga.

Diodes: nk'ibintu bya sanettky (sbd), bikoreshwa mugukosora neza no guhindura amashanyarazi.

2. Ibikoresho bya RF:

Imbaraga za RF Amplifier: ikoreshwa muri sitasiyo ya 5G na 5G hamwe nitumanaho rya Satelite.

Ibikoresho bya microwave: Bikwiranye na Radar na sisitemu yo gutumanaho.

3. Ibinyabiziga bishya byingufu:

Sisitemu yo gutwara amashanyarazi: Abagenzuzi b'amashanyarazi n'abosowe ku binyabiziga by'amashanyarazi.

Kwishyuza ikirundo: Module ya Module kubikoresho byo kwishyuza byihuse.

4. Porogaramu y'inganda:

Inverter ndende: Kuri kugenzura inganda no gucunga ingufu.

Grids Smart: Kuri HVDC yo kwanduza na Porogaramu za elegitoroniki.

5. Aerospace:

Ubushyuhe bwo hejuru bwa electronics: bubereye ubushyuhe bwinshi bwibikoresho bya Aerospace.

6. Umurima w'ubushakashatsi:

Ubugari bwa Bandgap Semiconductor Ubushakashatsi: Kugutezimbere ibikoresho bishya bya semiconductor nibikoresho.

Direlicon Carbide ya 12 ya Silicon Distrate ni ubwoko bwimikorere minini ya semiconductor hamwe numutungo mwiza nkubushyuhe bwinshi, guhagarika imirimo myinshi. Bikoreshwa cyane mububasha bwa electronics, ibikoresho bya radiyo, ibinyabiziga bishya byingufu, kugenzura inganda na aerospace, kandi ni ibikoresho byingenzi byo guteza imbere igisekuru gikurikira kandi gifite imbaraga-zuzuye.

Mugihe Slicon Carbide ya Silicon Scandeds ifite bike mu buryo butaziguye mumashanyarazi ya elegitoroniki nkikirahure cyimyambaro yimyambaro yimbaraga hamwe nibisubizo byimikorere miremire bishobora gutera imbaraga zoroheje, ibikoresho byo gutanga amashanyarazi. Kugeza ubu, iterambere nyamukuru ry'itsinda rya silicon ryibanda ku mirima yinganda nkimodoka nshya zitumanaho niterambere ryinganda, kandi riteza imbere inganda za semiconductor kugirango zitere imbere kandi zizewe.

Xkh yiyemeje gutanga ubuziranenge bwo mu rwego rwo hejuru 12 "Sic Vision ifite inkunga ya tekiniki na serivisi, harimo:

2. INTEGO YO GUTANGA: Tanga abakiriya bashyigikiye tekiniki yo gukura kwa Eptaxial, ibikoresho byo gukora ibikoresho nibindi bikorwa byo kunoza imikorere yibicuruzwa.

3. Kwipimisha no gutanga ibyemezo: Gutanga uburyo bwo kumenya inenge bukabije no kwemeza ubuziranenge kugirango umenye neza ko ishyari rihura nibipimo ngenderwaho.

4.R & D: Guteranya ibikoresho bishya bya kaburimbo bya silicon byabakiriya gutegura udushya twihangana.

Imbonerahamwe ya Data

1 2 Inch Silicon Carbide (Sic) Ibisobanuro
Amanota		Umusaruro wa zermopd Icyiciro (Z)	Umusaruro usanzwe Icyiciro (P Urwego)		Amanota ya Dummy (D.
Diameter		3 0 0 mm ~ 1305mm
Ubugari	4h-n	750μm ± 15 μm	750μm ± 25 μm
	4h-si	750μm ± 15 μm	750μm ± 25 μm
Icyerekezo cya Wafer		Kureka AXIS: 4.0 ° Kuri <1120> 0.5 ° kuri 4h-n, kuri axis: <± 0.5 ° kuri 4h-si
Micropip ubucucike	4h-n	≤0.4cm-2	≤4cm-2		≤25cm-2
	4h-si	≤5cm-2	≤10cm-2		≤25cm-2
Kurwanya	4h-n	0.015 ~ 0.024 ω · cm			0.015 ~ 0.028 ω · cm
	4h-si	≥1E10 ω · cm			≥1 ω · cm
Icyerekezo cyibanze		{10-10} ± 5.0 °
Uburebure bw'ibanze	4h-n	N / a
	4h-si	Noch
Guhezwa		Mm 3
Ltv / TTV / Umuheto / Wirdp		≤5μm / ≤15μm / ≤35 μm / ≤55 μm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubugome		Igipolonye Ra≤1 Nm
		CMP RABO0.2 NM			Ra≤0.5 nm
Impande zerekana urumuri rwinshi Amasahani ya hex ukoresheje urumuri rwinshi Uturere twa Polytype ukoresheje urumuri rwinshi Ibitekerezo bya karubone Silicon hejuru ya gratractches numucyo mwinshi		Nta na kimwe Agace ka Cumulative ≤0.05% Nta na kimwe Agace ka Cumulative ≤0.05% Nta na kimwe			Uburebure bwa Cumulative ≤ 20 mm, uburebure bwamaso 8 mm Agace ka Cumulative ≤0.1% Agace ka Cumulative≤3% Agace ka Cumulative ≤3% Uburebure bwa Cumulative≤1 × Gufeza
Chip ya Edge ukoresheje urumuri rwinshi		Ntanumwe wemerewe ≥0 ubugari nubujyakuzimu			7 byemewe, ≤1 mm buri umwe
(Tsd) Gutesha umutwe		Cm-2		N / a
(BPD) Kwitegura indege		Cm-2		N / a
SILICON EPOROS YATANZWE N'UBURYO BW'IMBERE		Nta na kimwe
Gupakira		Byinshi-waferte cyangwa ibikoresho byose bya wafer
Icyitonderwa:
1 ICYIZERE CYA LIMITS BIKORESHEJWE MU BURYO BWICE Usibye agace kidasanzwe. 2Ibishushanyo bigomba gusuzumwa kuri si ihura gusa. 3 Amakuru yo Kwiyubaka avuye kuri Koh yatsinze waf.

Xkh izakomeza gushora imari mu bushakashatsi n'iterambere kugira ngo iteze imbere intambwe ya santbide ya santide ya santimetero 12 z'ubunini, mu gihe Xkh irashakisha. Mu kugabanya ikiguzi no kwiyongera, xkh bizazana iterambere inganda za semiconductor.