12 cm

Ibisobanuro bigufi:

Ububiko bwa santimetero 12 za silicon karbide substrate (SiC substrate) nubunini bunini, bukora cyane bwa semiconductor material substrate ikozwe muri kristu imwe ya karubide ya silicon. Carbide ya Silicon (SiC) nigikoresho kinini cya semiconductor gifite ibikoresho byiza byamashanyarazi, ubushyuhe nubukanishi, bikoreshwa cyane mugukora ibikoresho bya elegitoronike mumashanyarazi menshi, inshuro nyinshi nubushyuhe bwo hejuru. Ububiko bwa santimetero 12 (300mm) nuburyo bugezweho bwerekana tekinoroji ya karubide ya silicon, ishobora kuzamura umusaruro muke no kugabanya ibiciro.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibiranga ibicuruzwa

3.Igikoresho kinini: Igituba ni 3.26eV (4H-SiC), gikwiranye n'ubushyuhe bwo hejuru hamwe na progaramu nyinshi.

4. Gukomera cyane: Mohs gukomera ni 9.2, icya kabiri nyuma ya diyama, kwihanganira kwambara no gukomera.

5. Ihungabana ryimiti: irwanya ruswa ikomeye, imikorere ihamye mubushyuhe bwo hejuru nibidukikije bikaze.

6. Ingano nini: santimetero 12 (300mm) substrate, kuzamura umusaruro, kugabanya igiciro cyibice.

7.Ubunini buke: tekinoroji yo mu rwego rwo hejuru imwe yo gukura kugirango harebwe ubucucike buke kandi buhamye.

Igicuruzwa nyamukuru icyerekezo

1. Ibikoresho bya elegitoroniki:

Mosfets: Ikoreshwa mumodoka yamashanyarazi, moteri yinganda ninganda zihindura amashanyarazi.

Diode: nka diode ya Schottky (SBD), ikoreshwa mugukosora neza no guhindura amashanyarazi.

2. Ibikoresho bya Rf:

Rf power amplifier: ikoreshwa muri sitasiyo ya 5G itumanaho no gutumanaho.

Ibikoresho bya Microwave: Bikwiranye na radar na sisitemu yo gutumanaho idafite umugozi.

3. Imodoka nshya zingufu:

Sisitemu yo gutwara amashanyarazi: abagenzuzi ba moteri na inverter kubinyabiziga byamashanyarazi.

Ikirundo cyo kwishyuza: Module yingufu kubikoresho byihuse.

4. Gusaba inganda:

Inverteri nini cyane: kugenzura moteri yinganda no gucunga ingufu.

Urusobe rwubwenge: Kubijyanye na HVDC hamwe nimbaraga za electronics.

5. Ikirere:

Ubushyuhe bwo hejuru bwa elegitoroniki: bukwiranye nubushyuhe bwo hejuru bwibikoresho byo mu kirere.

6. Ubushakashatsi:

Ubushakashatsi bwagutse bwagutse bwa semiconductor: kubwiterambere ryibikoresho bishya bya semiconductor.

Ububiko bwa santimetero 12 za silicon karbide ni ubwoko bwimikorere ya semiconductor yibikoresho bifite ibikoresho byiza cyane nkubushyuhe bwo hejuru bwumuriro, imbaraga zo kumeneka cyane hamwe nimbaraga nini. Ikoreshwa cyane mubikoresho bya elegitoroniki, ibikoresho bya radiyo yumurongo wa radiyo, ibinyabiziga bishya byingufu, kugenzura inganda nindege, kandi nibikoresho byingenzi bigamije iterambere ryigihe kizaza cyibikoresho bya elegitoroniki bikora neza kandi bifite ingufu nyinshi.

Mugihe silicon karbide substrate ifite porogaramu nke zitaziguye mubikoresho bya elegitoroniki byabaguzi nkibirahuri bya AR, ubushobozi bwabo mugucunga neza amashanyarazi hamwe na electronique miniaturike bishobora gushyigikira ibisubizo byoroheje, bitanga ingufu nyinshi kubikoresho bya AR / VR. Kugeza ubu, iterambere ry’ibanze rya silicon karbide yibanda cyane mu nganda nk’imodoka nshya z’ingufu, ibikorwa remezo by’itumanaho no gukoresha inganda mu nganda, kandi biteza imbere inganda zikoresha igice cya kabiri kugira ngo ziteze imbere mu cyerekezo cyiza kandi cyizewe.

XKH yiyemeje gutanga ubuziranenge 12 "SIC substrates hamwe na tekiniki yuzuye ya tekiniki na serivisi, harimo:

2. Gutezimbere uburyo bwiza: Guha abakiriya inkunga ya tekinike yo gukura kwa epitaxial, gukora ibikoresho nibindi bikorwa kugirango tunoze imikorere yibicuruzwa.

3. Kwipimisha no gutanga ibyemezo: Gutanga inenge zikomeye no kwemeza ubuziranenge kugirango urebe ko substrate yujuje ubuziranenge bwinganda.

4.Ubufatanye & D: Gufatanya guteza imbere ibikoresho bishya bya karubide ya silicon hamwe nabakiriya kugirango duteze imbere udushya twikoranabuhanga.

Imbonerahamwe yamakuru

1 2 santimetero Silicon Carbide (SiC) Substrate Ibisobanuro
Icyiciro		Umusaruro wa ZeroMPD Icyiciro (Z Icyiciro)	Umusaruro usanzwe Icyiciro (P Grade)		Dummy Grade (D Urwego)
Diameter		3 0 0 mm ~ 305mm
Umubyimba	4H-N	750μm ± 15 mm	750μm ± 25 mm
	4H-SI	750μm ± 15 mm	750μm ± 25 mm
Icyerekezo cya Wafer		Off axis: 4.0 ° yerekeza kuri <1120> ± 0.5 ° kuri 4H-N, Ku murongo: <0001> ± 0.5 ° kuri 4H-SI
Ubucucike bwa Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Kurwanya	4H-N	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H-SI	≥1E10 Ω · cm			≥1E5 Ω · cm
Icyerekezo Cyibanze		{10-10} ± 5.0 °
Uburebure bwibanze	4H-N	N / A.
	4H-SI	Ikimenyetso
Guhezwa		Mm 3
LTV / TTV / Umuheto / Intambara		≤5μm / ≤15μm / ≤35 μ m / ≤55 mm			≤5μm / ≤15μm / ≤35 □ μm / ≤55 □ μm
Ubugome		Igipolonye Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi Isahani ya Hex Kumucyo mwinshi Uturere twa Polytype Kumucyo mwinshi Amashusho ya Carbone Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo		Nta na kimwe Agace kegeranye ≤0.05% Nta na kimwe Agace kegeranye ≤0.05% Nta na kimwe			Uburebure bwa mm 20 mm, uburebure bumwe mm2 mm Agace kegeranye ≤0.1% Agace kegeranye ≤3% Agace kegeranye ≤3% Uburebure bwuzuye≤1 × wafer diameter
Imipira yimpande yumucyo mwinshi		Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure			7 byemewe, mm1 mm imwe imwe
(TSD) Gutandukanya imigozi		≤500 cm-2		N / A.
(BPD) Gusiba indege shingiro		Cm1000 cm-2		N / A.
Ubuso bwa Silicon Yanduye Kumucyo mwinshi		Nta na kimwe
Gupakira		Cassette ya Multi-wafer Cyangwa Igikoresho kimwe cya Wafer
Inyandiko:
1 Inenge ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. 2Ibishushanyo bigomba kugenzurwa kuri Si gusa. 3 Amakuru ya dislocation aturuka gusa kuri KOH etched wafers.