2 cm

Ibisobanuro bigufi:

Carbide ya Silicon (SiC) nigikoresho kinini cya semiconductor hamwe nubushyuhe bwiza bwumuriro hamwe nubushakashatsi bwimiti. Ubwoko bwa 6H-N bwerekana ko imiterere yacyo ya kirisiti ifite impande esheshatu (6H), naho “N” ikerekana ko ari ibikoresho byo mu bwoko bwa N bwo mu bwoko bwa semiconductor, ubusanzwe bigerwaho no kunywa azote.
Carbide substrate ya silicon ifite ibintu byiza biranga umuvuduko mwinshi, kurwanya ubushyuhe bwinshi, gukora inshuro nyinshi, nibindi ugereranije nibicuruzwa bya silicon, igikoresho cyateguwe na substrate ya silicon kirashobora kugabanya igihombo 80% kandi kigabanya ubunini bwibikoresho 90%. Ku bijyanye n’imodoka nshya zingufu, karbide ya silicon irashobora gufasha ibinyabiziga bishya byingufu kugera kuburemere no kugabanya igihombo, no kongera umuvuduko wo gutwara; Mu rwego rwitumanaho rya 5G, irashobora gukoreshwa mugukora ibikoresho bifitanye isano; Mumashanyarazi yamashanyarazi arashobora kunoza imikorere yo guhindura; Umwanya wo kunyura muri gari ya moshi urashobora gukoresha ubushyuhe bwacyo bwo hejuru hamwe n’ibiranga umuvuduko mwinshi.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibikurikira nibiranga 2inch silicon karbide wafer

1. Gukomera: Mohs gukomera ni 9.2.
2. Imiterere ya Crystal: imiterere ya mpande esheshatu.
3. Ubushyuhe bukabije bwumuriro: ubushyuhe bwumuriro wa SiC burenze cyane ubwa silikoni, bufasha gukwirakwiza neza ubushyuhe.
4. Ikinyuranyo kinini: icyuho cya bande ya SiC ni 3.3eV, gikwiranye nubushyuhe bwo hejuru, inshuro nyinshi hamwe nimbaraga nyinshi zikoreshwa.
5. Kumeneka amashanyarazi hamwe no kugendana na electron: Umuyagankuba mwinshi wumuriro wumuriro wa elegitoronike, bikwiranye nibikoresho bya elegitoroniki bikora neza nka MOSFETs na IGBTs.
6. Gutunganya imiti no kurwanya imirasire: ibereye ibidukikije bikaze nko mu kirere no kurinda igihugu. Imiti myiza irwanya imiti, aside, alkali nindi miti yumuti.
7.
Irashobora gukoreshwa cyane mumashanyarazi menshi, inshuro nyinshi hamwe nubushyuhe bwo hejuru bwa elegitoronike, nka Photodetector ya ultraviolet, inverters ya fotovoltaque, ibinyabiziga byamashanyarazi PCU, nibindi.

2inch silicon karbide wafer ifite progaramu nyinshi.

1.Imbaraga za elegitoronike zikoreshwa: zikoreshwa mugukora ingufu zikora cyane MOSFET, IGBT nibindi bikoresho, bikoreshwa cyane muguhindura amashanyarazi nibinyabiziga byamashanyarazi.

2.Rf ibikoresho: Mubikoresho byitumanaho, SiC irashobora gukoreshwa mumashanyarazi menshi kandi yongerera ingufu RF.

3.Ibikoresho by'amafoto: nkibikoresho bishingiye kuri SIC, cyane cyane mubururu na ultraviolet.

4.Sensors: Bitewe n'ubushyuhe bwo hejuru hamwe no kurwanya imiti, insimburangingo ya SiC irashobora gukoreshwa mugukora ibyuma byubushyuhe bwo hejuru hamwe nibindi bikoresho bya sensor.

5.Ibisirikare n’ikirere: bitewe nubushyuhe bwo hejuru bwabyo hamwe nimbaraga nyinshi ziranga, bikwiriye gukoreshwa mubidukikije bikabije.

Imirima nyamukuru yo gukoresha ya 6H-N ubwoko bwa 2 "Substrate ya SIC irimo ibinyabiziga bishya byingufu, amashanyarazi menshi hamwe noguhindura sitasiyo, ibicuruzwa byera, gari ya moshi yihuta, moteri, inverteri yifotora, gutanga amashanyarazi nibindi.

XKH irashobora guhindurwa nubunini butandukanye ukurikije ibyo abakiriya bakeneye. Ubuso butandukanye bwo kuvura no kuvura birahari. Ubwoko butandukanye bwa doping (nka doping ya azote) burashyigikiwe. Igihe gisanzwe cyo gutanga ni ibyumweru 2-4, ukurikije kugenwa. Koresha ibikoresho byo gupakira birwanya static hamwe na anti-seisimike kugirango umenye umutekano wa substrate. Amahitamo atandukanye yo kohereza arahari, kandi abakiriya barashobora kugenzura uko ibikoresho byifashe mugihe nyacyo binyuze mumibare yatanzwe. Tanga ubufasha bwa tekiniki na serivisi zubujyanama kugirango abakiriya bashobore gukemura ibibazo murwego rwo gukoresha.