Wafer ya Silicon Carbide ifite santimetero 3 na santimetero 76.2, ifite uburebure bwa 4H, ifite uburebure bwa silicone, ifite uburebure bwa 25cm, ifite uburebure bwa 25cm, ifite uburebure bwa 25cm.

Ibisobanuro bigufi:

Wafer ya SiC ifite ubuziranenge bwo hejuru (Silicon Carbide) ikoreshwa mu nganda zikora ibikoresho bya elegitoroniki na optoelectronic. Wafer ya SiC ifite ubugari bwa 3inch ni ibikoresho bya semiconductor byo mu gisekuru gitaha, wafer za silicon-carbide zifite umurambararo wa santimetero 3. Utwo dupira twagenewe gukora ibikoresho by'amashanyarazi, RF na optoelectronics.

Ohereza imeri kuri twe

Ibiranga

Ibisobanuro by'ibicuruzwa

Uduce twa SiC (silicon carbide) twa santimetero 3 twa 4H dukoreshwa mu gufunga amashanyarazi ni ibikoresho bikunze gukoreshwa cyane. 4H igaragaza imiterere ya kristale ya tetrahexahedral. Uduce twa kristu dukoreshwa mu gufunga amashanyarazi bivuze ko imiterere ya kristu ifite ubushobozi bwo guhangana n’amazi kandi ishobora gutandukana n’amazi anyuramo.

Uduce twa wafer duto dufite ibi bikurikira: ubushobozi bwo gutwara ubushyuhe bwinshi, gutakaza ubushobozi bwo gutwara ibintu buhoro, kudahangana n'ubushyuhe bwinshi, no kudahindagurika neza mu buryo bwa mekanike na shimi. Kubera ko karubide ya silikoni ifite icyuho kinini cy'ingufu kandi ishobora kwihanganira ubushyuhe bwinshi n'ikirere cy'amashanyarazi menshi, utwo duce twa 4H-SiC dukoreshwa cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi no mu maraso ya radiyo (RF).

Uburyo bw'ingenzi bwo gukoresha wafers za 4H-SiC zirimo:

1--Ikoranabuhanga rikoresha ingufu: Wafer za 4H-SiC zishobora gukoreshwa mu gukora ibikoresho byo guhindura amashanyarazi nka MOSFET (Metal Oxide Semiconductor Field Effect Transistors), IGBT (Insulated Gate Bipolar Transistors) na Schottky diodes. Ibi bikoresho bifite igihombo gito cyo guhindura no guhindura amashanyarazi mu kirere gifite voltage nyinshi n'ubushyuhe bwinshi kandi bitanga imikorere myiza n'ubwizerwe.

2--Ibikoresho bya Radio Frequency (RF): Wafer za 4H-SiC zikoreshwa mu gukora amplifiers za RF zifite ingufu nyinshi, amplifiers za RF zifite imbaraga nyinshi, resistor za chip, filters, n'ibindi bikoresho. Carbide ya silicon ifite imikorere myiza kandi ihamye mu bushyuhe bitewe n'umuvuduko wayo munini wa electron saturation hamwe n'ubushobozi bwo gutwara ubushyuhe bwinshi.

3--Ibikoresho bya Optoelectronic: Wafer za 4H-SiC zikoreshwa mu gukora diode za laser zifite imbaraga nyinshi, imashini zipima urumuri rwa UV na optoelectronic integrated circuits.

Ku bijyanye n'icyerekezo cy'isoko, icyifuzo cya wafer za 4H-SiC zidafite ubushyuhe buri kwiyongera bitewe n'ubwiyongere bw'ibikoresho by'ikoranabuhanga, RF na optoelectronics. Ibi biterwa nuko karubide ya silikoni ifite uburyo bwinshi bwo kuyikoresha, harimo gukoresha neza ingufu, imodoka zikoresha amashanyarazi, ingufu zishobora kuvugururwa n'itumanaho. Mu gihe kizaza, isoko rya wafer za 4H-SiC zidafite ubushyuhe buhagije riracyari ryiza cyane kandi byitezwe ko rizasimbura ibikoresho bisanzwe bya silikoni mu buryo butandukanye.