6inch 150mm Silicon Carbide SiC Wafers 4H-N kubwubushakashatsi bwa MOS cyangwa SBD nubushakashatsi bwa Dummy

6inch 150mm Silicon Carbide SiC Wafers 4H-N kubwubushakashatsi bwa MOS cyangwa SBD nubushakashatsi bwakozwe na Dummy Icyiciro cyerekanwe

Ibisobanuro bigufi:

6-santimetero ya silicon karbide imwe ya kristal substrate ni ibikoresho bikora cyane bifite umubiri mwiza na chimique. Yakozwe muri silicon karbide isukuye cyane yibikoresho bya kirisiti, irerekana ubushyuhe bwikirenga bwumuriro, itekinike, hamwe nubushyuhe bwo hejuru. Iyi substrate, yakozwe nuburyo bunoze bwo gukora nibikoresho byiza, byahindutse ibikoresho byatoranijwe muguhimba ibikoresho bya elegitoroniki bikora neza mubice bitandukanye.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Imirima yo gusaba

6-santimetero ya silicon karbide imwe ya kristal substrate ifite uruhare runini mubikorwa byinshi. Ubwa mbere, ikoreshwa cyane mubikorwa bya semiconductor muguhimba ibikoresho bya elegitoroniki bifite ingufu nyinshi nka tristoriste yamashanyarazi, imiyoboro ihuriweho, hamwe na modul yingufu. Ubushyuhe bukabije bwumuriro hamwe nubushyuhe bwo hejuru butuma ubushyuhe bukwirakwizwa neza, bikavamo kunoza imikorere no kwizerwa. Icya kabiri, wafer ya silicon karbide ningirakamaro mubushakashatsi bugamije iterambere ryibikoresho nibikoresho. Byongeye kandi, silicon karbide wafer isanga porogaramu nini mubijyanye na optoelectronics, harimo no gukora LED na diode ya laser.

Ibicuruzwa byihariye

Carbide ya santimetero 6 karbide imwe ya kristal substrate ifite diameter ya santimetero 6 (hafi mm 152.4). Ubuso bwo hejuru ni Ra <0.5 nm, n'ubugari ni 600 ± 25 mm. Substrate irashobora guhindurwa hamwe N-ubwoko bwa P cyangwa ubwoko bwa P, bushingiye kubyo umukiriya asabwa. Byongeye kandi, irerekana imashini idasanzwe, ishoboye guhangana nigitutu no kunyeganyega.

Diameter		150 ± 2.0mm （6inch）
Umubyimba		350 mm ± 25μm
Icyerekezo		Ku murongo ： <0001> ± 0.5 °		Kureka umurongo ： 4.0 ° werekeza kuri 1120 ± 0.5 °
Polytype		4H
Kurwanya (Ω · cm)	4H-N	0.015 ~ 0.028 Ω · cm / 0.015 ~ 0.025ohm · cm
	4 / 6H-SI	> 1E5
Icyerekezo cyibanze		{10-10} ± 5.0 °
Uburebure bwibanze (mm)		47.5 mm ± 2,5 mm
Impande		Chamfer
TTV / Umuheto / Intambara (um)		≤15 / ≤40 / ≤60
AFM Imbere (Si-face)		Igipolonye Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm (10mm * 10mm)	≤5μm (10mm * 10mm)		≤10μm (10mm * 10mm)
TTV		≤5μm	≤10μm		≤15μm
Igishishwa cya orange / ibinogo / ibice / kwanduza / ikizinga / imirongo		Nta na kimwe	Nta na kimwe		Nta na kimwe
indent		Nta na kimwe	Nta na kimwe		Nta na kimwe

Caribide ya santimetero 6 ya karbide imwe ya kristal substrate ni ibikoresho bikora cyane bikoreshwa cyane mubikorwa bya semiconductor, ubushakashatsi, na opopoelectronics. Itanga ubushyuhe buhebuje bwumuriro, itekinike yubukanishi, hamwe nubushyuhe bwo hejuru, bigatuma ibereye guhimba ibikoresho bya elegitoroniki bifite ingufu nyinshi nubushakashatsi bushya bwibikoresho. Dutanga ibisobanuro bitandukanye hamwe no guhitamo uburyo bwo guhuza ibyifuzo bitandukanye byabakiriya.Twandikire kubindi bisobanuro kuri wafer ya silicon!