Wafer ya silikoni ya silikoni ya santimetero 8 ifite uburebure bwa 4H-N, ifite uburebure bwa 0.5mm, ifite uburebure bwa poroteyine ikozwe mu buryo bwihariye.

Ibisobanuro bigufi:

Karubine ya Silicon (SiC), izwi kandi nka karubine ya Silicon, ni semiconductor irimo silicon na karubone ifite formula ya shimi ya SiC. SiC ikoreshwa mu bikoresho by'ikoranabuhanga bya semiconductor bikora ku bushyuhe bwinshi cyangwa umuvuduko mwinshi, cyangwa byombi. SiC kandi ni kimwe mu bice by'ingenzi bya LED, ni substrate isanzwe yo gukura ibikoresho bya GaN, kandi ishobora no gukoreshwa nk'ahantu ho gushyushya amatara ya LED afite ingufu nyinshi.
Substrate ya silikoni ya santimetero 8 ni igice cy'ingenzi cy'ibikoresho bya semiconductor byo mu gisekuru cya gatatu, bifite imiterere yo kwangirika cyane kw'ubutaka, gutwara ubushyuhe bwinshi, umuvuduko mwinshi wo guhindagurika kwa electron, nibindi, kandi ikwiriye gukora ibikoresho by'ikoranabuhanga bikoresha ubushyuhe bwinshi, voltage nyinshi, n'imbaraga nyinshi. Ahantu hakoreshwa cyane harimo ibinyabiziga by'amashanyarazi, inzira ya gari ya moshi, kohereza no guhindura ingufu za voltage nyinshi, photovoltaics, itumanaho rya 5G, kubika ingufu, indege, n'ibigo by'amakuru by'ingufu za AI.

Ohereza imeri kuri twe

Ibiranga

Ibintu by'ingenzi bigize substrate ya silikoni ya santimetero 8 yo mu bwoko bwa 4H-N birimo:

1. Ubucucike bwa mikorotubule: ≤ 0.1/cm² cyangwa munsi yayo, nk'uko ubucucike bwa mikorotubule bugabanuka cyane bukagera munsi ya 0.05/cm² muri bimwe mu bicuruzwa.
2. Igipimo cy'imiterere ya kristu: Igipimo cy'imiterere ya kristu ya 4H-SiC kigera kuri 100%.
3. Ubushobozi bwo guhangana n'ingufu: 0.014~0.028 Ω·cm, cyangwa hagati ya 0.015-0.025 Ω·cm.
4. Ubukana bw'ubuso: CMP Si Face Ra≤0.12nm.
5. Ubunini: Ubusanzwe 500.0±25μm cyangwa 350.0±25μm.
6. Inguni yo gupfuka: 25±5° cyangwa 30±5° kuri A1/A2 bitewe n'ubunini.
7. Ubucucike bwose bw'impinduka: ≤3000/cm².
8. Kwanduzwa kw'icyuma cyo hejuru: ≤1E+atome 11/cm².
9. Gupfunyika no gupfunyika: ≤ 20μm na ≤2μm, uko bikurikirana.
Ibi biranga bituma substrates za silikoni karubide za santimetero 8 zigira akamaro kanini mu gukora ibikoresho by'ikoranabuhanga bikoresha ubushyuhe bwinshi, inshuro nyinshi, kandi bifite imbaraga nyinshi.

Wafer ya silikoni ya santimetero 8 ifite akamaro kanini.

1. Ibikoresho by'amashanyarazi: SiC wafers zikoreshwa cyane mu gukora ibikoresho by'amashanyarazi nka MOSFETs z'amashanyarazi (transistors za metal-oxide-semiconductor field-effect), diode za Schottky, na modules zo guhuza ingufu. Bitewe n'ubushyuhe bwinshi, voltage nyinshi yo kwangirika, hamwe no kugenda kwa electron nyinshi kwa SiC, ibi bikoresho bishobora kugera ku guhindura ingufu neza kandi mu buryo bworoshye mu bidukikije birimo ubushyuhe bwinshi, voltage nyinshi, n'umuvuduko mwinshi.

2. Ibikoresho bya Optoelectronic: SiC wafers zigira uruhare runini mu bikoresho bya optoelectronic, zikoreshwa mu gukora ibyuma bipima ikirere, diode za laser, amasoko ya ultraviolet, nibindi. Imiterere myiza ya silicon carbide ituma iba ibikoresho bikundwa cyane, cyane cyane mu bikorwa bisaba ubushyuhe bwinshi, frequencies nyinshi, n'imbaraga nyinshi.

3. Ibikoresho bya Radio Frequency (RF): Uduce twa SiC tunakoreshwa mu gukora ibikoresho bya RF nka amplifiers za RF power, switches za high-frequency, sensors za RF, n'ibindi. SiC ifite ubushyuhe bwinshi, imiterere ya high-frequency, n'igihombo gito bituma iba nziza cyane ku bikorwa bya RF nko mu itumanaho ridafite insinga na sisitemu za radar.

4. Ibyuma by'ikoranabuhanga bikoresha ubushyuhe bwinshi: Bitewe n'ubushyuhe bwinshi buhamye n'ubushyuhe bwinshi, SiC wafers zikoreshwa mu gukora ibikoresho by'ikoranabuhanga byagenewe gukorera ahantu hashyushye cyane, harimo ibikoresho by'ikoranabuhanga bikoresha ubushyuhe bwinshi, sensors, na controllers.

Inzira z'ingenzi zikoreshwa muri substrate ya silikoni ya santimetero 8 yo mu bwoko bwa 4H-N zirimo gukora ibikoresho by'ikoranabuhanga bikoresha ubushyuhe bwinshi, inshuro nyinshi, n'imbaraga nyinshi, cyane cyane mu bijyanye n'ibikoresho by'ikoranabuhanga by'imodoka, ingufu zikomoka ku mirasire y'izuba, ingufu zikomoka ku muyaga, za gari ya moshi zikoresha amashanyarazi, seriveri, ibikoresho byo mu rugo, n'imodoka zikoresha amashanyarazi. Byongeye kandi, ibikoresho nka SiC MOSFET na Schottky diodes byagaragaje imikorere myiza mu guhindura umurongo, igerageza rya short-circuit, no gukoresha inverter, bituma bikoreshwa mu bikoresho by'ikoranabuhanga bikoresha ingufu.

XKH ishobora guhindurwamo ubugari butandukanye bitewe n'ibyo abakiriya bakeneye. Hari uburyo butandukanye bwo gutunganya no gusiga irangi. Hari ubwoko butandukanye bwo gukoresha irangi (nk'ikoreshwa rya azote). XKH ishobora gutanga ubufasha bwa tekiniki na serivisi z'ubujyanama kugira ngo abakiriya bashobore gukemura ibibazo mu gihe cyo kuyikoresha. Irangi rya silikoni rya santimetero 8 rifite inyungu zikomeye mu bijyanye no kugabanya ikiguzi no kongera ubushobozi, bishobora kugabanya ikiguzi cya chip ku kigero cya 50% ugereranije n'irya santimetero 6. Byongeye kandi, kwiyongera k'ubugari bwa santimetero 8 bifasha kugabanya ihindagurika rya geometrical no kuzunguruka kw'inkombe mu gihe cyo gukora imashini, bityo bikanoza umusaruro.