8 cm SiC silicon karbide wafer 4H-N ubwoko bwa 0.5mm yumusaruro wubushakashatsi urwego rwabigenewe rusize neza

8 santimetero SiC silicon karbide wafer 4H-N ubwoko bwa 0.5mm yumusaruro wicyiciro cyubushakashatsi icyiciro cya polish substrate Ikiranga Ishusho

Ibisobanuro bigufi:

Carbide ya Silicon (SiC), izwi kandi ku izina rya silicon karbide, ni igice cya kabiri kirimo silikoni na karubone hamwe n’imiti ya SiC. SiC ikoreshwa mubikoresho bya elegitoroniki ya semiconductor ikora ku bushyuhe bwinshi cyangwa ku muvuduko mwinshi, cyangwa byombi. SiC kandi nikimwe mubintu byingenzi bya LED, ni substrate isanzwe yo gukura ibikoresho bya GaN, kandi irashobora no gukoreshwa nkicyuma gishyushya LED zifite ingufu nyinshi.
Ibice 8-bya silicon karbide substrate nigice cyingenzi cyigisekuru cya gatatu cyibikoresho bya semiconductor, bifite ibimenyetso biranga imbaraga zumuriro mwinshi, umuvuduko mwinshi wumuriro, umuvuduko mwinshi wa electron, nibindi, kandi birakwiriye gukora ubushyuhe bwinshi, amashanyarazi menshi, hamwe nibikoresho bikomeye bya elegitoroniki. Ibikorwa byingenzi byifashishwa birimo ibinyabiziga byamashanyarazi, kunyura muri gari ya moshi, gukwirakwiza amashanyarazi n’umuvuduko mwinshi, gufotora amashanyarazi, itumanaho rya 5G, kubika ingufu, icyogajuru, hamwe n’ibigo bikoresha ingufu za AI.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibintu nyamukuru biranga santimetero 8 za silicon karbide substrate ubwoko bwa 4H-N harimo:

1. Ubucucike bwa Microtubule: ≤ 0.1 / cm² cyangwa munsi, nkubucucike bwa microtubule bwaragabanutse cyane kugeza munsi ya 0.05 / cm² mubicuruzwa bimwe.
2.
3. Kurwanya: 0.014 ~ 0.028 Ω · cm, cyangwa bihamye hagati ya 0.015-0.025 Ω · cm.
4. Ubusumbane bwubuso: CMP Si Isura Ra≤0.12nm.
5. Ubunini: Mubisanzwe 500.0 ± 25μm cyangwa 350.0 ± 25μm.
6. Inguni ya chamfering: 25 ± 5 ° cyangwa 30 ± 5 ° kuri A1 / A2 bitewe n'ubunini.
7. Ubwinshi bwa dislocation yuzuye: 0003000 / cm².
8. Kwanduza ibyuma byo hejuru: ≤1E + 11 atom / cm².
9. Kwunama no kurupapuro: ≤ 20μm na ≤2μm.
Ibiranga bituma 8-santimetero ya silicon karbide substrate ifite agaciro gakomeye mugukoresha mugukora ubushyuhe bwo hejuru, inshuro nyinshi, hamwe nibikoresho bya elegitoroniki bifite ingufu nyinshi.

8inch silicon karbide wafer ifite progaramu nyinshi.

1. Bitewe nubushyuhe bwo hejuru bwumuriro, imbaraga zo kumeneka cyane, hamwe na electroni nyinshi ya SiC, ibyo bikoresho birashobora kugera kumikorere ihindagurika, ikora cyane mumashanyarazi menshi, ubushyuhe bwinshi, hamwe nibidukikije byinshi.

2. inshuro nyinshi, hamwe nimbaraga zo hejuru.

3. SiC ihindagurika ryinshi ryumuriro, ibiranga-inshuro nyinshi, hamwe nigihombo gito bituma iba nziza kubikorwa bya RF nkitumanaho ridafite insinga na sisitemu ya radar.

4.Ubushyuhe bwo hejuru bwa elegitoroniki: Bitewe nubushyuhe bukabije bwubushyuhe hamwe nubushyuhe bukabije bwubushyuhe, waferi ya SiC ikoreshwa mugukora ibicuruzwa bya elegitoroniki byagenewe gukorera ahantu hashyuha cyane, harimo nubushyuhe bwo hejuru bwubushyuhe bwo hejuru, sensor, hamwe nubugenzuzi.

Inzira nyamukuru zikoreshwa muburyo bwa santimetero 8 za silicon karbide substrate ya 4H-N harimo gukora ubushyuhe bwo hejuru, inshuro nyinshi, hamwe nibikoresho bya elegitoroniki, cyane cyane mubijyanye na elegitoroniki yimodoka, ingufu zizuba, ingufu z'umuyaga, amashanyarazi lokomoteri, seriveri, ibikoresho byo mu rugo, hamwe n’imodoka zikoresha amashanyarazi. Mubyongeyeho, ibikoresho nka SiC MOSFETs na diott ya Schottky byagaragaje imikorere myiza muguhindura imirongo, ubushakashatsi bwumuzunguruko mugufi, hamwe na progaramu ya inverter, bigatuma ikoreshwa ryayo muri electronics.

XKH irashobora guhindurwa nubunini butandukanye ukurikije ibyo abakiriya bakeneye. Ubuso butandukanye bwo kuvura no kuvura birahari. Ubwoko butandukanye bwa doping (nka doping ya azote) burashyigikiwe. XKH irashobora gutanga ubufasha bwa tekiniki hamwe na serivisi zubujyanama kugirango abakiriya bashobore gukemura ibibazo murwego rwo gukoresha. Substrate ya santimetero 8 ya silicon karbide ifite ibyiza byingenzi mubijyanye no kugabanya ibiciro no kongera ubushobozi, bishobora kugabanya igiciro cya chip yibice hafi 50% ugereranije na substrate ya santimetero 6. Byongeye kandi, kwiyongera k'uburebure bwa santimetero 8 bifasha kugabanya gutandukana kwa geometrike no gutembera ku nkombe mugihe cyo gutunganya, bityo umusaruro ukiyongera.