Urugendo rwa Epitaxial
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GaN ya 200mm ya santimetero 8 kuri substrate ya safiro Epi-layer wafer
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Substrate ifite imikorere itandukanye cyane ku bikoresho bya RF acoustic (LNOSiC)
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GaN kuri Kirahure cya santimetero 4: Amahitamo y'ikirahure ashobora guhindurwa arimo JGS1, JGS2, BF33, na Quartz isanzwe
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AlN-on-NPSS Wafer: Urupapuro rwa Aluminium Nitride rufite imikorere myiza ku gice cya Safiro kidasembuye kugira ngo gikoreshwe mu bushyuhe bwinshi, imbaraga nyinshi, na porogaramu za RF
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Udupira twa GaN-on-SiC Epitaxial Wafers twakozwe ku giti cyazo (100mm, 150mm) – Amahitamo menshi ya SiC Substrate (4H-N, HPSI, 4H/6H-P)
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GaN-on-Diamond Wafers 4inch 6inch Ubunini bwa epi yose (micron) 0.6 ~ 2.5 cyangwa yahinduwe kugira ngo ikoreshwe mu buryo bwihuta
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GaAs ifite imbaraga nyinshi ya epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yo kuvura hakoreshejwe laser
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InGaAs epitaxial wafer substrate PD Array photodetector arrays irashobora gukoreshwa kuri LiDAR
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Imashini ipima urumuri rwa APD ya InP epitaxial wafer substrate ifite uburebure bwa santimetero 2.5 na santimetero 3.5, ikoresha ikoranabuhanga rya APD rikoreshwa mu gutumanaho rya fiber optic cyangwa LiDAR.
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6inch SiC Epitaxiy wafer N/P yo mu bwoko bwa N/P yemerwa mu buryo bwihariye
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Wafer ya SiC Epi ya santimetero 4 kuri MOS cyangwa SBD
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Silicon-On-Insulator Substrate SOI wafer y'ibice bitatu bya Microelectronics na Radio Frequency