HPSI SiC Wafer ≥ 90% Ikwirakwizwa rya Optical Grade ya AI / AR Ikirahure

Ibisobanuro bigufi:

Parameter	Icyiciro	4-Inch Substrate	6-Inch Substrate
Diameter	Z Icyiciro / D.	99.5 mm - 100.0 mm	149.5 mm - mm 150.0
Ubwoko bwa poly	Z Icyiciro / D.	4H	4H
Umubyimba	Z Icyiciro	500 μ m ± 15 mm	500 μ m ± 15 mm
Umubyimba	D Icyiciro	500 μm ± 25 mm	500 μm ± 25 mm
Icyerekezo cya Wafer	Z Icyiciro / D.	Ku murongo: <0001> ± 0.5 °	Ku murongo: <0001> ± 0.5 °
Ubucucike bwa Micropipe	Z Icyiciro	Cm 1 cm²	Cm 1 cm²
Ubucucike bwa Micropipe	D Icyiciro	≤ 15 cm²	≤ 15 cm²
Kurwanya	Z Icyiciro	≥ 1E10 Ω · cm	≥ 1E10 Ω · cm
Kurwanya	D Icyiciro	≥ 1E5 Ω · cm	≥ 1E5 Ω · cm

Ohereza imeri kuri twe

Ibiranga

Intangiriro yibanze: Uruhare rwa HPSI SiC Wafers mubirahuri bya AI / AR

HPSI (Byinshi-Byera Semi-Insulating) Wafer ya Silicon Carbide ni wafer yihariye irangwa no kwihanganira cyane (> 10⁹ Ω · cm) hamwe nubucucike buke cyane. Mu birahuri bya AI / AR, bikora cyane cyane nkibikoresho byibanze byububiko bwa optique ya optique ya optique ya optique, ikemura ibibazo byerekeranye nibikoresho gakondo bya optique mubijyanye nibintu byoroshye kandi byoroshye, gukwirakwiza ubushyuhe, no gukora neza. Kurugero, ibirahuri bya AR bifashisha ibyuma bya SiC waveguide birashobora kugera kumurima mugari wo kureba (FOV) wa 70 ° - 80 °, mugihe ugabanya umubyimba wurwego rumwe rukaba rugera kuri 0.55mm gusa nuburemere bukagera kuri 2.7g gusa, bikazamura cyane kwambara neza no kwibiza mumaso.

b0968b8d-1b0f-4dfe-8fce-865d38404ba5_ 副本 _ 副本

Ibintu by'ingenzi biranga: Uburyo ibikoresho bya SiC biha imbaraga ibirahuri bya AI / AR

Indanganturo Yumubyigano hamwe na Optical Performance Optimisation

Indangantego ya SiC (2.6-22.7) iri hejuru ya 50% ugereranije nikirahure gakondo (1.8-22.0). Ibi bituma habaho uburyo bworoshye kandi bunoze bwo kuyobora umurongo, kwagura cyane FOV. Igipimo kinini cyo kwangirika nacyo gifasha guhagarika "ingaruka zumukororombya" zisanzwe mumashanyarazi atandukanye, kunoza isuku yishusho.

Ubushobozi budasanzwe bwo gucunga ubushyuhe

Hamwe nubushyuhe bwumuriro bugera kuri 490 W / m · K (hafi yumuringa), SiC irashobora gukwirakwiza vuba ubushyuhe butangwa na Micro-LED yerekana modules. Ibi birinda imikorere yangirika cyangwa igikoresho gisaza kubera ubushyuhe bwinshi, bigatuma ubuzima bwa bateri burambye kandi butajegajega.

Imbaraga za mashini no kuramba

SiC ifite ubukana bwa Mohs bwa 9.5 (icya kabiri nyuma ya diyama), itanga uburyo budasanzwe bwo guhangana, bigatuma biba byiza mubirahuri bikoreshwa kenshi. Ubuso bwacyo burashobora kugenzurwa kuri Ra <0.5 nm, bigatuma igabanuka rike kandi ryorohereza cyane urumuri rwinshi.

Guhuza Umutungo w'amashanyarazi

Kurwanya HPSI SiC (> 10⁹ Ω · cm) bifasha gukumira ibimenyetso bitavangira. Irashobora kandi gukora nkibikoresho byingufu zikoreshwa neza, bigahindura uburyo bwo gucunga ingufu mubirahuri bya AR.

Icyerekezo cyibanze cyo gusaba

Ibikoresho Byibanze bya AI / AR Glasses

Lens Itandukanye ya Waveguide: SiC substrate ikoreshwa mugukora ultra-thin optique waveguide ishyigikira FOV nini no kurandura ingaruka zumukororombya.
Amadirishya ya Window na Prisms: Binyuze mugukata no gusya byabugenewe, SiC irashobora gutunganyirizwa mumadirishya ikingira cyangwa prism optique kubirahuri bya AR, bikongerera urumuri no kwihanganira kwambara.

Kwagura Porogaramu Mubindi Bice

Imbaraga za Electronics: Zikoreshwa mugihe cyinshi, ibintu byinshi cyane nkibinyabiziga bishya byingufu nimbaraga zo kugenzura inganda.
Quantum Optics: Igikorwa nkicyicaro cyibara ryamabara, ikoreshwa muri substrate yo gutumanaho kwa kwant hamwe nibikoresho byumva.

4 Inch & 6 Inch HPSI SiC Substrate Kugereranya Kugereranya

Parameter	Icyiciro	4-Inch Substrate	6-Inch Substrate
Diameter	Z Icyiciro / D.	99.5 mm - 100.0 mm	149.5 mm - mm 150.0
Ubwoko bwa poly	Z Icyiciro / D.	4H	4H
Umubyimba	Z Icyiciro	500 μ m ± 15 mm	500 μ m ± 15 mm
Umubyimba	D Icyiciro	500 μm ± 25 mm	500 μm ± 25 mm
Icyerekezo cya Wafer	Z Icyiciro / D.	Ku murongo: <0001> ± 0.5 °	Ku murongo: <0001> ± 0.5 °
Ubucucike bwa Micropipe	Z Icyiciro	Cm 1 cm²	Cm 1 cm²
Ubucucike bwa Micropipe	D Icyiciro	≤ 15 cm²	≤ 15 cm²
Kurwanya	Z Icyiciro	≥ 1E10 Ω · cm	≥ 1E10 Ω · cm
Kurwanya	D Icyiciro	≥ 1E5 Ω · cm	≥ 1E5 Ω · cm
Icyerekezo Cyibanze	Z Icyiciro / D.	(10-10) ± 5.0 °	(10-10) ± 5.0 °
Uburebure bwibanze	Z Icyiciro / D.	32,5 mm ± 2,2 mm	Ikimenyetso
Uburebure bwa kabiri	Z Icyiciro / D.	18.0 mm ± 2,2 mm	-
Guhezwa	Z Icyiciro / D.	Mm 3	Mm 3
LTV / TTV / Umuheto / Intambara	Z Icyiciro	≤ 2.5 μ m / ≤ 5 μ m / ≤ 15 μ m / ≤ 30 mm	≤ 2.5 μ m / ≤ 6 μ m / ≤ 25 μ m / ≤ 35 mm
LTV / TTV / Umuheto / Intambara	D Icyiciro	≤ 10 μ m / ≤ 15 μ m / ≤ 25 μ m / ≤ 40 mm	≤ 5 μ m / ≤ 15 μ m / ≤ 40 μ m / ≤ 80 mm
Ubugome	Z Icyiciro	Igipolonye Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Igipolonye Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm
Ubugome	D Icyiciro	Igipolonye Ra ≤ 1 nm / CMP Ra ≤ 0.2 nm	Igipolonye Ra ≤ 1 nm / CMP Ra ≤ 0.5 nm
Impera	D Icyiciro	Agace kegeranye ≤ 0.1%	Uburebure bwa mm 20 mm, imwe ≤ 2 mm
Uturere twa polytype	D Icyiciro	Agace kegeranye ≤ 0.3%	Agace kegeranye ≤ 3%
Amashusho ya Carbone	Z Icyiciro	Agace kegeranye ≤ 0.05%	Agace kegeranye ≤ 0.05%
Amashusho ya Carbone	D Icyiciro	Agace kegeranye ≤ 0.3%	Agace kegeranye ≤ 3%
Igishushanyo cya Silicon	D Icyiciro	5 biremewe, buri ≤1mm	Uburebure bwuzuye ≤ 1 x diameter
Imipira	Z Icyiciro	Nta na kimwe cyemewe (ubugari n'uburebure ≥0.2mm)	Nta na kimwe cyemewe (ubugari n'uburebure ≥0.2mm)
Imipira	D Icyiciro	7 byemewe, buri ≤1mm	7 byemewe, buri ≤1mm
Gutandukanya imirongo	Z Icyiciro	-	≤ 500 cm²
Gupakira	Z Icyiciro / D.	Cassette ya Multi-wafer Cyangwa Igikoresho kimwe cya Wafer	Cassette ya Multi-wafer Cyangwa Igikoresho kimwe cya Wafer

Serivisi za XKH: Ubushobozi bwo Gukora no Guhindura Ubushobozi

Isosiyete ya XKH ifite ubushobozi bwo guhuza vertical kuva mubikoresho fatizo kugeza kuri wafer yarangiye, bikubiyemo urunigi rwose rwo gukura kwa substrate ya SiC, gukata, gusya, no gutunganya ibicuruzwa. Ibyiza bya serivisi byingenzi birimo:

Ibintu bitandukanye:Turashobora gutanga ubwoko butandukanye bwa wafer nkubwoko bwa 4H-N, ubwoko bwa 4H-HPSI, ubwoko bwa 4H / 6H-P, nubwoko bwa 3C-N. Kurwanya, ubunini, hamwe nicyerekezo birashobora guhinduka ukurikije ibisabwa.
?Ingano yoroheje Guhindura:Dushyigikiye gutunganya wafer kuva kuri santimetero 2 kugeza kuri santimetero 12, kandi dushobora kandi gutunganya ibintu byihariye nkibice bya kare (urugero, 5x5mm, 10x10mm) na prism idasanzwe.
Igenzura rya Optical-Grade Igenzura:Wafer Yuzuye Ubunini Bwinshi (TTV) irashobora kugumishwa kuri <1 mm, hamwe nubuso bwubuso kuri Ra <0.3 nm, byujuje ibisabwa nano-urwego rusabwa kubikoresho byifashishwa.
Igisubizo cyihuse ku isoko:Uburyo bwubucuruzi bukomatanyirijwe hamwe butuma habaho impinduka nziza kuva R&D ikajya mubikorwa rusange, igashyigikira buri kintu cyose uhereye kugenzurwa rito kugeza kugicuruzwa kinini (igihe cyo kuyobora iminsi 15-40).

Ibibazo bya HPSI SiC Wafer

Q1: Kuki HPSI SiC ifatwa nkibikoresho byiza bya lens ya AR waveguide?
A1.
Q2: Nigute HPSI SiC itezimbere imicungire yubushyuhe mubirahuri bya AI / AR?
A2: Hamwe nubushyuhe bwumuriro bugera kuri 490 W / m · K (hafi yumuringa), ikwirakwiza neza ubushyuhe mubice nka Micro-LEDs, bigatuma imikorere ihamye hamwe nigihe kirekire cyibikoresho.
Q3: Ni izihe nyungu zirambye HPSI SiC itanga kubirahure byambara?
A.