LT Litiyumu Tantalate (LiTaO3) Crystal 2inch / 3inch / 4inch / 6 寸 inch Orientaiton Y-42 ° / 36 ° / 108 ° Ubunini 250-500um
Ibipimo bya tekiniki
Izina | Urwego rwiza-LiTaO3 | Urutonde rwamajwi LiTaO3 |
Axial | Z gukata + / - 0.2 ° | 36 ° Y gukata / 42 ° Y gukata / X gukata(+ / - 0.2 °) |
Diameter | 76.2mm + / - 0.3mm /100 ± 0.2mm | 76.2mm + /-0.3mm100mm + /-0.3mm 0r 150 ± 0.5mm |
Indege ya Datum | 22mm + / - 2mm | 22mm + / -2mm32mm + / -2mm |
Umubyimba | 500um + / -5mm1000um + / -5mm | 500um + / -20mm350um + / -20mm |
TTV | ≤ 10um | ≤ 10um |
Ubushyuhe bwa Curie | 605 ° C + / - 0,7 ° C (DTAmethod) | 605 ° C + / -3 ° C (DTAmethod |
Ubwiza bwubuso | Kuringaniza impande ebyiri | Kuringaniza impande ebyiri |
Impande | kuzenguruka | kuzenguruka |
Ibintu by'ingenzi biranga
1.Imiterere ya kristu n'imikorere y'amashanyarazi
· Crystallographic Stabilite: 100% 4H-SiC polytype yiganje, zeru zeru nyinshi (urugero, 6H / 15R), hamwe na XRD itigisa umurongo wuzuye ubugari kuri kimwe cya kabiri ntarengwa (FWHM) ≤32.7 arcsec.
· Umuvuduko mwinshi wa Carrier: Imashini ya elegitoronike ya cm 5.400 / V · s (4H-SiC) hamwe nu mwobo wa cm 380 cm / V · s, ituma ibishushanyo mbonera byihuta.
· Gukomera kw'imirasire: Ihanganira imirasire ya 1 ya MeV ya neutron hamwe no kwangirika kwimuka ya 1 × 10¹⁵ n / cm², nibyiza mu kirere no mu kirere.
2.Ubushyuhe nubukanishi
· Ubushuhe budasanzwe bwubushyuhe: 4.9 W / cm · K (4H-SiC), inshuro eshatu za silikoni, ibikorwa bifasha hejuru ya 200 ° C.
· Coefficient yo Kwagura Ubushyuhe Buke: CTE ya 4.0 × 10⁻⁶ / K (25-1000 ° C), igahuza neza nububiko bushingiye kuri silikoni no kugabanya imihangayiko yubushyuhe.
3.Gusuzuma neza no gutunganya neza
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· Ubucucike bwa Micropipe: <0,3 cm⁻² (waferi ya santimetero 8), ubucucike bwa dislokisiyo <1000 cm⁻² (byagenzuwe hakoreshejwe KOH).
· Ubwiza bwubuso: CMP isizwe na Ra <0.2 nm, yujuje ibyangombwa bya EUV lithographie-ibyangombwa bisabwa.
Ibyingenzi
Indanganturo | Gusaba | Ibyiza bya tekiniki |
Itumanaho ryiza | Lazeri 100G / 400G, moderi ya silicon Photonics | InP imbuto yimbuto ituma bandgap itaziguye (1.34 eV) hamwe na Si-ishingiye kuri heteroepitaxy, bigabanya igihombo cyo guhuza optique. |
Imodoka nshya | 800V ihinduranya ingufu za inverteri, charger zo mu bwato (OBC) | 4H-SiC substrates ihangane> 1,200 V, igabanya igihombo cyogutwara 50% nubunini bwa sisitemu 40%. |
5G Itumanaho | Ibikoresho bya milimetero-RF RF (PA / LNA), ibyuma byongera ingufu za sitasiyo | Semi-insuline ya SiC substrates (résistivivite> 10⁵ Ω · cm) ituma imirongo myinshi (60 GHz +) ihuza pasiporo. |
Ibikoresho byo mu nganda | Ibyuma byubushyuhe bwo hejuru, impinduka zubu, monitor ya reaction ya nucleaire | InSb imbuto yimbuto (0.17 eV bandgap) itanga sensitivite igera kuri 300% @ 10 T. |
LiTaO₃ Wafers - Ibiranga Ibyingenzi
1. Imikorere isumba izindi ya Piezoelectric
· Coefficient nyinshi ya piezoelectric (d₃₃ ~ 8-10 pC / N, K² ~ 0.5%) ituma ibikoresho bya SAW / BAW byihuta cyane hamwe nigihombo cyo gushiramo <1.5dB kuri 5G RF muyunguruzi
· Guhuza amashanyarazi meza cyane bifasha mugari-mugari (≥5%) gushungura ibishushanyo bya sub-6GHz na mmWave
2. Ibyiza byiza
· Umuyoboro mugari (> 70% woherejwe kuva 400-5000nm) kuri moderi ya electro-optique igera kuri> 40GHz
· Gukomera gukomeye kutari kumurongo (χ⁽²⁾ ~ 30pm / V) byorohereza igisekuru cya kabiri cyiza (SHG) muri sisitemu ya laser
3. Ihungabana ry’ibidukikije
· Ubushyuhe bwo hejuru bwa Curie (600 ° C) bugumana igisubizo cya piezoelectric murwego rwibinyabiziga (-40 ° C kugeza 150 ° C)
· Imiti idahwitse irwanya acide / alkalies (pH1-13) itanga ubwizerwe mubikorwa bya sensor inganda
4. Ubushobozi bwo kwihindura
· Icyerekezo cyerekezo: X-gukata (51 °), Y-gukata (0 °), Z-gukata (36 °) kubisubizo bya piezoelectric ibisubizo
· Amahitamo ya Doping: Mg-ikoporora (irwanya ibyangiritse optique), Zn-yuzuye (yongerewe d₃₃)
· Ubuso burangije: Epitaxial-yiteguye gusya (Ra <0.5nm), ITO / Au metallisation
LiTaO₃ Wafers - Porogaramu Yibanze
1. RF Imbere-Impera
· 5G NR SAW muyunguruzi (Band n77 / n79) hamwe na coefficient yubushyuhe bwinshyi (TCF) <| -15ppm / ° C |
· Ultra-Broadband BAW resonator ya WiFi 6E / 7 (5.925-7.125GHz)
2. Amafoto Yuzuye
· Umuvuduko mwinshi Mach-Zehnder modulator (> 100Gbps) kugirango itumanaho rihuze
· QWIP ya infragre ya disiketi hamwe nuburebure bwumurongo ushobora kuva kuri 3-14 mm
3. Ibikoresho bya elegitoroniki
· Ibikoresho bya parikingi ya Ultrasonic hamwe na> 200kHz inshuro zikora
· Transducers ya TPMS piezoelectric irokoka -40 ° C kugeza 125 ° C gusiganwa ku magare
4. Uburyo bwo kwirwanaho
· EW yakira muyunguruzi hamwe na> 60dB hanze yo kwangwa
· Abashaka misile IR windows itanga imirasire ya 3-5μm MWIR
5. Ikoranabuhanga rishya
· Optomechanical kwant transducers ya microwave-kuri-optique ihinduka
· PMUT yerekana amashusho yubuvuzi bwa ultrasound (> 20MHz)
LiTaO₃ Wafers - Serivisi za XKH
1. Gutanga imiyoborere
· Boule-to-wafer gutunganya hamwe nibyumweru 4 byo kuyobora igihe gisanzwe
· Ibiciro-byongerewe umusaruro bitanga 10-15% inyungu yibiciro hamwe nabanywanyi
2. Ibisubizo byihariye
· Icyerekezo cyihariye cya wafering: 36 ° ± 0.5 ° Y-gukata kugirango SAW ikore neza
· Ibice byanditse: MgO (5mol%) doping ya optique ya optique
Serivise zicyuma: Cr / Au (100 / 1000Å) ishusho ya electrode
3. Inkunga ya tekiniki
· Ibiranga ibikoresho: XRD itigisa umurongo (FWHM <0.01 °), isesengura rya AFM
· Kwigana ibikoresho: Icyitegererezo cya FEM kubushakashatsi bwa SAW
Umwanzuro
WaTers ya LiTaO₃ ikomeje gufasha iterambere ryikoranabuhanga mu itumanaho rya RF, gufotora hamwe, hamwe n’ibidukikije bikabije. Ubuhanga bwibikoresho bya XKH, gukora neza, hamwe nubufasha bwa tekinoroji bifasha abakiriya gutsinda ibibazo byubushakashatsi muri sisitemu ya elegitoroniki izakurikiraho.


