P-ubwoko bwa SiC wafer 4H / 6H-P 3C-N 6uburebure bwa 350 mm hamwe nicyerekezo cyibanze cya Flat

P-ubwoko bwa SiC wafer 4H / 6H-P 3C-N 6ubugari bwa 350 mm hamwe na Primary Flat Icyerekezo cyerekanwe

Ibisobanuro bigufi:

Ubwoko bwa P bwo mu bwoko bwa SiC wafer, 4H / 6H-P 3C-N, ni ibikoresho bya semiconductor ya santimetero 6 zifite umubyimba wa mm 350 hamwe nicyerekezo kibanza cyerekanwe, cyagenewe ibikoresho bya elegitoroniki bigezweho. Azwiho kuba afite ubushyuhe bwinshi, ubushyuhe bukabije bwo kumeneka, hamwe no guhangana nubushyuhe bukabije n’ibidukikije byangirika, iyi wafer ikwiranye nibikoresho bya elegitoroniki bikora cyane. Ubwoko bwa P-doping butangiza umwobo nkibintu byambere bitwara ibintu, bigatuma biba byiza kuri electronics power na progaramu ya RF. Imiterere yacyo ikomeye ituma imikorere ihamye mugihe cyumuvuduko mwinshi hamwe nigihe cyinshi cyane, bigatuma ikwiranye nibikoresho byamashanyarazi, ibikoresho bya elegitoroniki yubushyuhe bwo hejuru, hamwe ningufu zihinduka cyane. Icyerekezo cyibanze cyerekana guhuza neza mubikorwa byo gukora, bitanga ubudahwema muguhimba ibikoresho.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Ibisobanuro4H / 6H-P Ubwoko bwa SiC Ibigize Substrates Imbonerahamwe isanzwe

6 santimetero ya diametre Silicon Carbide (SiC) Substrate Ibisobanuro

Icyiciro			Umusaruro wa MPD ZeruIcyiciro (Z. Icyiciro)	Umusaruro usanzweIcyiciro (P. Icyiciro)	Dummy Grade (D Icyiciro)
Diameter			145.5 mm ~ 150.0 mm
Umubyimba			350 mm ± 25 mm
Icyerekezo cya Wafer			-Offumurongo: 2.0 ° -4.0 ° werekeza kuri [1120] ± 0.5 ° kuri 4H / 6H-P, Ku murongo: 〈111〉 ± 0.5 ° kuri 3C-N
Ubucucike bwa Micropipe			0 cm-2
Kurwanya	p-ubwoko bwa 4H / 6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ubwoko bwa 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Icyerekezo Cyibanze		4H / 6H-P	-1010} ± 5.0 °
		3C-N	-{110} ± 5.0 °
Uburebure bwibanze			32,5 mm ± 2,2 mm
Uburebure bwa kabiri			18.0 mm ± 2,2 mm
Icyerekezo cya kabiri cya Flat			Silicon ireba hejuru: 90 ° CW. kuva kuri Prime igororotse ± 5.0 °
Guhezwa			Mm 3		Mm 6
LTV / TTV / Umuheto / Intambara			≤2.5 μ m / ≤5 μ m / ≤15 μ m / ≤30 mm		≤10 μ m / ≤15 μ m / ≤25 μ m / ≤40 mm
Ubugome			Igipolonye Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi			Nta na kimwe		Uburebure bwa mm 10 mm, uburebure bumwe mm2 mm
Isahani ya Hex Kumucyo mwinshi			Agace kegeranye ≤0.05%		Agace kegeranye ≤0.1%
Uturere twa Polytype Kumucyo mwinshi			Nta na kimwe		Agace kegeranye ≤3%
Amashusho ya Carbone			Agace kegeranye ≤0.05%		Agace kegeranye ≤3%
Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo			Nta na kimwe		Uburebure bwuzuye≤1 × wafer diameter
Imipira yo ku mpande hejuru yumucyo mwinshi			Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure		5 byemewe, mm1 mm imwe imwe
Ubuso bwa Silicon Yanduye Kubwinshi			Nta na kimwe
Gupakira			Multi-wafer Cassette cyangwa Igikoresho kimwe cya Wafer

Inyandiko:

Limits Imipaka ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. # Igishushanyo kigomba kugenzurwa kuri Si face o

Ubwoko bwa P bwo mu bwoko bwa SiC wafer, 4H / 6H-P 3C-N, bufite ubunini bwa santimetero 6 n'ubugari bwa mm 350, bugira uruhare runini mu nganda zikora inganda zikoresha ingufu za elegitoroniki. Ubwiza buhebuje bwumuriro hamwe na voltage yo kumeneka cyane bituma biba byiza mubikoresho byo gukora nka sisitemu yo guhindura amashanyarazi, diode, na transistor ikoreshwa mubushyuhe bwo hejuru cyane nkibinyabiziga byamashanyarazi, amashanyarazi, hamwe na sisitemu yingufu zishobora kuvugururwa. Ubushobozi bwa wafer bwo gukora neza mubihe bigoye bituma imikorere yizewe mubikorwa byinganda bisaba ingufu nyinshi ningufu zingufu. Byongeye kandi, icyerekezo cyibanze cyibanze gifasha guhuza neza mugihe cyo guhimba ibikoresho, kuzamura umusaruro no guhuza ibicuruzwa.

Ibyiza bya N-bwoko bwa SiC igizwe na substrate zirimo

Ubushyuhe bwo hejuru cyane: P-ubwoko bwa SiC wafers ikwirakwiza neza ubushyuhe, bigatuma iba nziza kubushyuhe bwo hejuru.
Umuvuduko mwinshi wo kumeneka: Irashobora kwihanganira voltage nyinshi, kwemeza kwizerwa muri electronics power nibikoresho bikoresha ingufu nyinshi.
Kurwanya Ibidukikije: Kuramba bihebuje mubihe bikabije, nkubushyuhe bwo hejuru nibidukikije byangirika.
Guhindura imbaraga neza: P-ubwoko bwa doping bworohereza gukoresha ingufu neza, bigatuma wafer ikwiranye na sisitemu yo guhindura ingufu.
Icyerekezo Cyibanze: Iremeza guhuza neza mugihe cyo gukora, kunoza ibikoresho neza kandi bihamye.
Imiterere yoroheje (350 mkm): Umubyimba mwiza wa wafer ushyigikira kwishyira hamwe mubikoresho bya elegitoroniki bigezweho.

Muri rusange, P-ubwoko bwa SiC wafer, 4H / 6H-P 3C-N, itanga inyungu zinyuranye zituma bikenerwa cyane mubikorwa byinganda na elegitoroniki. Umuvuduko mwinshi wumuriro hamwe na voltage yameneka ituma ibikorwa byizewe mubushuhe bwo hejuru hamwe na voltage nyinshi, mugihe irwanya ibihe bibi bituma iramba. Ubwoko bwa P-doping butuma imbaraga zihinduka neza, bigatuma biba byiza kuri electronics power na sisitemu yingufu. Byongeye kandi, icyerekezo cya wafer cyibanze cyerekana guhuza neza mugihe cyo gukora, kuzamura umusaruro uhoraho. Nubunini bwa 350 mkm, birakwiriye rwose kwinjiza mubikoresho bigezweho, byoroshye.