SiC
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12 cm
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8 cm SiC silicon karbide wafer 4H-N ubwoko bwa 0.5mm yumusaruro wubushakashatsi urwego rwabigenewe rusize neza
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HPSI SiC wafer dia: uburebure bwa 3inch: 350um ± 25 µm kuri Electronics
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3inch Ubuziranenge Bwinshi Semi-Gukingura （HPSI） SiC wafer 350um Dummy urwego rwibanze
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P-ubwoko bwa SiC substrate SiC wafer Dia2inch ibicuruzwa bishya
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ubwoko bwumusaruro urwego 500um
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Yikubye kabiri Amashanyarazi Yambere Icyiciro cya Mos
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HPSI SiC Wafer ≥ 90% Ikwirakwizwa rya Optical Grade ya AI / AR Ikirahure
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Semi-Ihinduranya ya Silicon Carbide (SiC) Substrate Yera-Yera Kuri Ar Glasses
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4H-SiC Epitaxial Wafers kuri Ultra-High Voltage MOSFETs (100-500 mm, 6 cm)
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SICOI (Carbide ya Silicon kuri Insulator) Wafers SiC Filime KURI Silicon
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Silicon Carbide (SiC) Substrate imwe-Crystal Substrate - 10 × 10mm Wafer