SiC
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12 cm
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8 cm SiC silicon karbide wafer 4H-N ubwoko bwa 0.5mm yumusaruro wubushakashatsi urwego rwabigenewe rusize neza
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HPSI SiC wafer dia: uburebure bwa 3inch: 350um ± 25 µm kuri Electronics
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3inch Ubuziranenge Bwinshi Semi-Gukingura （HPSI） SiC wafer 350um Dummy urwego rwibanze
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P-ubwoko bwa SiC substrate SiC wafer Dia2inch ibicuruzwa bishya
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8inch 200mm Silicon Carbide SiC Wafers 4H-N ubwoko bwumusaruro urwego 500um
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Yikubye kabiri Amashanyarazi Yambere Icyiciro cya Mos
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Silicon Carbide (SiC) Substrate imwe-Crystal Substrate - 10 × 10mm Wafer
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4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ya MOS cyangwa SBD
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SiC Epitaxial Wafer kubikoresho byamashanyarazi - 4H-SiC, N-ubwoko, Ubucucike Buke
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4H-N Ubwoko bwa SiC Epitaxial Wafer Umuvuduko mwinshi Umuvuduko mwinshi
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Uburebure bwa santimetero 3 (Undoped) Silicon Carbide Wafers igice cya kabiri cya Sic Substrates (HPSl)