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SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari

SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur
  • SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari
  • SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari
  • SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari
  • SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari
  • SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari
  • SiC silicon karbide wafer SiC wafer 4H-N 6H-N HPSI pur Isuku ryinshi Semi-izingana） 4H / 6H-P 3C -n ubwoko 2 3 4 6 8inch irahari

Ibisobanuro bigufi:

Dutanga amahitamo atandukanye ya waferi yo mu rwego rwohejuru ya SiC (Silicon Carbide), twibanze cyane kuri N-4H-N na 6H-N wafer, nibyiza kubisabwa mubikorwa bya optoelectronics, ibikoresho byamashanyarazi, hamwe nubushyuhe bwo hejuru . Iyi waferi yo mu bwoko bwa N izwiho kuba ifite ubushyuhe budasanzwe bw’umuriro, itajegajega ry’amashanyarazi, kandi ikaramba ku buryo budasanzwe, bigatuma ikora neza cyane nko gukoresha amashanyarazi nka elegitoroniki y’amashanyarazi, sisitemu yo gutwara ibinyabiziga bikoresha amashanyarazi, imashini zishobora kongera ingufu, hamwe n’inganda zitanga ingufu mu nganda. Usibye amaturo yacu yo mu bwoko bwa N, dutanga kandi ubwoko bwa P-4H / 6H-P na 3C SiC wafers kubikenewe byihariye, harimo ibyuma byihuta cyane na RF, hamwe na progaramu ya fotonike. Wafers yacu iraboneka mubunini kuva kuri santimetero 2 kugeza kuri santimetero 8, kandi dutanga ibisubizo byihariye kugirango byuzuze ibisabwa byinganda zitandukanye. Kubindi bisobanuro cyangwa ibibazo, nyamuneka twandikire.


Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

4H-N na 6H-N (N-Ubwoko bwa SiC Wafers)

Gusaba:Byibanze bikoreshwa mumashanyarazi, optoelectronics, hamwe nubushyuhe bwo hejuru.

Urwego rwa Diameter:50.8 mm kugeza kuri mm 200.

Umubyimba:350 μ m ± 25 μ m, hamwe nubunini bwubushake bwa 500 μm ± 25 mm.

Kurwanya:N-ubwoko bwa 4H / 6H-P: ≤ 0.1 Ω · cm (Z-urwego), ≤ 0.3 Ω · cm (P-urwego); N-ubwoko bwa 3C-N: ≤ 0.8 mΩ · cm (Z-urwego), ≤ 1 mΩ · cm (P-urwego).

Ubugome:Ra ≤ 0.2 nm (CMP cyangwa MP).

Ubucucike bwa Micropipe (MPD):<1 ea / cm².

TTV: ≤ 10 mm kuri diameter zose.

Intambara: ≤ 30 μ m (≤ 45 μ m kuri wafer ya santimetero 8).

Guhezwa ku mpande:3 mm kugeza kuri mm 6 bitewe n'ubwoko bwa wafer.

Gupakira:Cassette ya Multi-wafer cyangwa ikintu kimwe cya wafer.

Ohter iboneka ubunini 3inch 4inch 6inch 8inch

HPSI (Wafers ya SiC Yera cyane

Gusaba:Ikoreshwa mubikoresho bisaba kwihanganira cyane no gukora neza, nkibikoresho bya RF, porogaramu ya fotonike, hamwe na sensor.

Urwego rwa Diameter:50.8 mm kugeza kuri mm 200.

Umubyimba:Ubunini busanzwe bwa 350 μm ± 25 μ m hamwe namahitamo ya waferi yuzuye kugeza kuri 500 mm.

Ubugome:Ra ≤ 0.2 nm.

Ubucucike bwa Micropipe (MPD): ≤ 1 ea / cm².

Kurwanya:Kurwanya cyane, mubisanzwe bikoreshwa muri kimwe cya kabiri.

Intambara: ≤ 30 μ m (kubunini buto), ≤ 45 μ mm kuri diameter nini.

TTV: ≤ 10 mm.

Ohter iboneka ubunini 3inch 4inch 6inch 8inch

4H-P、6H-P&3C SiC wafer(P-Ubwoko bwa SiC Wafers)

Gusaba:Byibanze kububasha hamwe nibikoresho byihuta cyane.

Urwego rwa Diameter:50.8 mm kugeza kuri mm 200.

Umubyimba:350 μ m ± 25 μ m cyangwa amahitamo yihariye.

Kurwanya:P-ubwoko bwa 4H / 6H-P: ≤ 0.1 Ω · cm (Z-urwego), ≤ 0.3 Ω · cm (P-urwego).

Ubugome:Ra ≤ 0.2 nm (CMP cyangwa MP).

Ubucucike bwa Micropipe (MPD):<1 ea / cm².

TTV: ≤ 10 mm.

Guhezwa ku mpande:Mm 3 kugeza kuri mm 6.

Intambara: ≤ 30 μm kubunini buto, ≤ 45 μ m kubunini bunini.

Ohter iboneka ubunini 3inch 4inch 6inch5×5 10×10

Imbonerahamwe yamakuru Ibice Imbonerahamwe

Umutungo

2 cm

3inch

4inch

6inch

8inch

Andika

4H-N / HPSI /
6H-N / 4H / 6H-P / 3C;

4H-N / HPSI /
6H-N / 4H / 6H-P / 3C;

4H-N / HPSI // 4H / 6H-P / 3C;

4H-N / HPSI // 4H / 6H-P / 3C;

4H-N / HPSI / 4H-SEMI

Diameter

50.8 ± 0.3 mm

76.2 ± 0.3mm

100 ± 0.3mm

150 ± 0.3mm

200 ± 0.3 mm

Umubyimba

330 ± 25 um

350 ± 25 um

350 ± 25 um

350 ± 25 um

350 ± 25 um

350 ± 25um ；

500 ± 25um

500 ± 25um

500 ± 25um

500 ± 25um

cyangwa yihariye

cyangwa yihariye

cyangwa yihariye

cyangwa yihariye

cyangwa yihariye

Ubugome

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Intambara

≤ 30um

≤ 30um

≤ 30um

≤ 30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Shushanya / Gucukura

CMP / MP

MPD

<1ea / cm-2

<1ea / cm-2

<1ea / cm-2

<1ea / cm-2

<1ea / cm-2

Imiterere

Uruziga, Flat 16mm ； Yuburebure 22mm; Burebure 30 / 32.5mm; Burebure 47,5mm; ICYITONDERWA; ICYITONDERWA;

Bevel

45 °, Ubwoko bwa SEMI; C Imiterere

 Icyiciro

Icyiciro cy'umusaruro kuri MOS & SBD; Icyiciro cy'ubushakashatsi; Urwego rwa Dummy, Imbuto wafer Urwego

Ijambo

Diameter, Ubunini, Icyerekezo, ibisobanuro hejuru birashobora gutegurwa kubisabwa

 

Porogaramu

·Amashanyarazi

N ubwoko bwa SiC wafers nibyingenzi mubikoresho bya elegitoroniki bitewe nubushobozi bwabo bwo gukora voltage nini hamwe numuyoboro mwinshi. Zikunze gukoreshwa mumashanyarazi, inverter, na moteri ya moteri yinganda nkingufu zishobora kongera ingufu, ibinyabiziga byamashanyarazi, hamwe no gukoresha inganda.

· Amashanyarazi
Ubwoko bwa SiC ibikoresho, cyane cyane kubikoresho bya optoelectronic, bikoreshwa mubikoresho nka diode itanga urumuri (LED) na diode ya laser. Ubushyuhe bwo hejuru bwumuriro hamwe na bande yagutse bituma biba byiza kubikoresho bikoresha optoelectronic ibikoresho.

·Ubushyuhe bwo hejuru
4H-N 6H-N SiC wafers ikwiranye nubushyuhe bwo hejuru cyane, nko muri sensor hamwe nibikoresho byamashanyarazi bikoreshwa mu kirere, mu modoka, no mu nganda aho gukwirakwiza ubushyuhe no gutuza ku bushyuhe bwo hejuru ari ngombwa.

·Ibikoresho bya RF
4H-N 6H-N SiC wafers ikoreshwa mubikoresho bya radio (RF) ikora mumirongo myinshi. Bikoreshwa muri sisitemu yitumanaho, tekinoroji ya radar, hamwe n’itumanaho rya satellite, aho bisabwa ingufu nyinshi n’imikorere.

·Porogaramu
Muri fotonike, wafers ya SiC ikoreshwa mubikoresho nka fotodetekeri na modulator. Ibikoresho byihariye bifasha gukora neza mumucyo, guhindura, no gutahura muri sisitemu yitumanaho ryiza hamwe nibikoresho byerekana amashusho.

·Sensors
SiC wafers ikoreshwa muburyo butandukanye bwa sensor porogaramu, cyane cyane mubidukikije bikaze aho ibindi bikoresho bishobora kunanirwa. Harimo ubushyuhe, umuvuduko, hamwe na sensor ya chimique, nibyingenzi mubice nkimodoka, peteroli na gaze, no gukurikirana ibidukikije.

·Sisitemu yo gutwara ibinyabiziga byamashanyarazi
Ikoranabuhanga rya SiC rifite uruhare runini mubinyabiziga byamashanyarazi mugutezimbere imikorere nimikorere ya sisitemu yo gutwara. Hamwe na semiconductor ya SiC, ibinyabiziga byamashanyarazi birashobora kugera kubuzima bwiza bwa bateri, ibihe byo kwishyuza byihuse, hamwe ningufu nyinshi.

·Sensors Yambere hamwe na Photonic Guhindura
Mu buhanga bugezweho bwa tekinoroji, wafers ya SiC ikoreshwa mugukora ibyuma bisobanutse neza kubisabwa muri robo, ibikoresho byubuvuzi, no gukurikirana ibidukikije. Muguhindura fotonike, imitungo ya SiC irakoreshwa kugirango ishobore guhindura neza ingufu zamashanyarazi kubimenyetso bya optique, bifite akamaro mubitumanaho nibikorwa remezo byihuta bya interineti.

Ikibazo

Q4H ni iki muri 4H SiC?
A. "H" yerekana ubwoko bwa polytype ya mpandeshatu, itandukanya nizindi polytypes ya SiC nka 6H cyangwa 3C.

QNi ubuhe bushyuhe bwa 4H-SiC?
A: Amashanyarazi ya 4H-SiC (Carbide ya Silicon) agera kuri 490-500 W / m · K mubushyuhe bwicyumba. Ubu bushyuhe bwinshi bwumuriro butuma biba byiza mubisabwa mumashanyarazi ya elegitoroniki hamwe nubushyuhe bwo hejuru, aho gukwirakwiza ubushyuhe ari ngombwa.

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