4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer ya MOS cyangwa SBD
Incamake ya SiC Substrate SiC Epi-wafer
Dutanga urutonde rwuzuye rw'udupira twa SiC two mu rwego rwo hejuru na wafers zo mu bwoko bwa polytypes nyinshi na doping profiles—harimo 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), na 6H-P (p-type conductive)—mu gipimo kuva kuri 4″, 6″, na 8″ kugeza kuri 12″. Uretse udupira twambaye ubusa, serivisi zacu zo gukuraho epi wafer zifite agaciro zitanga wafers za epitaxial (epi) zifite ubugari bugenzurwa neza (1–20 µm), ingano ya doping, n'ubucucike bw'ibisebe.
Buri wafer ya sic na epi wafer bigenzurwa cyane (ubucucike bwa micropipe <0.1 cm⁻², ubukana bw'ubuso bwa Ra <0.2 nm) hamwe n'imiterere yuzuye y'amashanyarazi (CV, igenamiterere ry'ubudahangarwa) kugira ngo harebwe ko kristale ikora neza kandi ikora neza. Byaba bikoreshwa mu bikoresho by'ikoranabuhanga bikoresha ingufu, amplifiers za RF zikoresha frequency yo hejuru, cyangwa ibikoresho bya optoelectronic (LED, photodetectors), imiyoboro yacu ya SiC substrate na epi wafer itanga ubushobozi bwo kwizerwa, guhagarara neza kw'ubushyuhe, no gukomera kw'ihungabana bikenewe n'ibikorwa bikomeye cyane muri iki gihe.
Imiterere n'ikoreshwa ry'ubwoko bwa SiC Substrate 4H-N
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Imiterere ya 4H-N SiC substrate Polytype (Hexagonal)
Icyuho kinini cya ~3.26 eV gitanga imikorere ihamye y'amashanyarazi n'ubushyuhe mu gihe cy'ubushyuhe bwinshi n'amashanyarazi menshi.
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Ishingiro rya SiCGukoresha imiti igabanya ubukana bw'ubwoko bwa N
Gukoresha azote neza bigabanya igipimo cy’umuyoboro w’amashanyarazi kuva kuri 1 × 10¹⁶ kugeza kuri 1 × 10¹⁹ cm⁻³ n’ubushyuhe bw’icyumba kugeza kuri ~ 900 cm² / V·s, bigabanya igihombo cyo gutwara.
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Ishingiro rya SiCUbushobozi bwo guhangana n'ibintu byinshi no kuba bimwe
Ingano ihari yo kugabanya ubukana bw'ibinyabiziga ya 0.01–10 Ω·cm n'ubugari bwa wafer ya 350–650 µm hamwe n'ubushobozi bwo kwihanganira ± 5% haba mu gukoresha imiti igabanya ubukana n'ubugari—ni byiza cyane mu gukora ibikoresho bifite ingufu nyinshi.
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Ishingiro rya SiCUbucucike bw'ibinure bike cyane
Ubucucike bwa mikorobe < 0.1 cm⁻² n'ubucucike bwa dislocation ya basal-plane < 500 cm⁻², bitanga umusaruro wa > 99% w'ibikoresho n'ubuziranenge buhebuje bwa kristale.
- Ishingiro rya SiCUbushobozi budasanzwe bwo gutwara ubushyuhe
Uburyo bwo gutwara ubushyuhe bugera kuri ~370 W/m·K bworohereza gukuraho ubushyuhe neza, byongera ubwizigirwa bw'igikoresho n'ubucucike bw'ingufu.
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Ishingiro rya SiCPorogaramu zigamije
SiC MOSFET, diode za Schottky, module z'amashanyarazi n'ibikoresho bya RF byo gutwara imodoka zikoresha amashanyarazi, inverters zikoresha imirasire y'izuba, inverters zikoresha inganda, sisitemu zo gukurura, n'andi masoko akoresha amashanyarazi akoresha amashanyarazi.
Ibisobanuro bya wafer ya SiC ya santimetero 6 ifite uburebure bwa 4H-N | ||
| Umutungo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Icyiciro | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Ingano | mm 149.5 - mm 150.0 | mm 149.5 - mm 150.0 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Icyerekezo cya Wafer | Umurongo utari hagati y'umurongo n'umurongo: 4.0° ugana <1120> ± 0.5° | Umurongo utari hagati y'umurongo n'umurongo: 4.0° ugana <1120> ± 0.5° |
| Ubucucike bw'imiyoboro mito | ≤ 0.2 cm² | ≤ cm² 15 |
| Ubushobozi bwo kwirinda | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Icyerekezo cy'ibanze cy'ubugari | [10-10] ± 50° | [10-10] ± 50° |
| Uburebure bw'ibanze bw'ikiraro | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Kutagaragaza Edge | mm 3 | mm 3 |
| LTV/TIV / Umuheto / Umupfundo | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Ubukana | Igiporisi Ra ≤ 1 nm | Igiporisi Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imyanya y'inkombe iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 |
| Amasahani ya Hex ashingiye ku rumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 0.1% |
| Uduce twa Polytype dukoresheje urumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 3% |
| Ibikubiye muri karuboni igaragara | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 5% |
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ umurambararo wa wafer 1 | |
| Udupira tw'inkombe dukoresheje urumuri rwinshi | Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥ 0.2 mm | 7 byemewe, ≤ mm 1 buri kimwe |
| Guhindura Screw mu Migozi | < 500 cm³ | < 500 cm³ |
| Kwanduzwa n'urumuri rwinshi rwa silicon | ||
| Gupfunyika | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer |
Ibisobanuro bya wafer ya SiC ya santimetero 8 ya 4H-N | ||
| Umutungo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Icyiciro | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Ingano | mm 199.5 - mm 200.0 | mm 199.5 - mm 200.0 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Icyerekezo cya Wafer | 4.0° ugana <110> ± 0.5° | 4.0° ugana <110> ± 0.5° |
| Ubucucike bw'imiyoboro mito | ≤ 0.2 cm² | ≤ cm² 5 |
| Ubushobozi bwo kwirinda | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Icyerekezo cy'icyubahiro | ||
| Kutagaragaza Edge | mm 3 | mm 3 |
| LTV/TIV / Umuheto / Umupfundo | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Ubukana | Igiporisi Ra ≤ 1 nm | Igiporisi Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imyanya y'inkombe iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 |
| Amasahani ya Hex ashingiye ku rumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 0.1% |
| Uduce twa Polytype dukoresheje urumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 3% |
| Ibikubiye muri karuboni igaragara | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 5% |
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ umurambararo wa wafer 1 | |
| Udupira tw'inkombe dukoresheje urumuri rwinshi | Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥ 0.2 mm | 7 byemewe, ≤ mm 1 buri kimwe |
| Guhindura Screw mu Migozi | < 500 cm³ | < 500 cm³ |
| Kwanduzwa n'urumuri rwinshi rwa silicon | ||
| Gupfunyika | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer |
4H-SiC ni ibikoresho bikora neza cyane bikoreshwa mu bikoresho by'ikoranabuhanga bikoresha ingufu, ibikoresho bya RF, no mu bikorwa bikoresha ubushyuhe bwinshi. "4H" yerekeza ku miterere ya kristu, ifite uburebure bwa hexagonal, naho "N" ikagaragaza ubwoko bwa doping bukoreshwa mu kunoza imikorere y'ibikoresho.
Itsinda4H-SiCubwoko bukunze gukoreshwa kuri:
Ingufu z'amashanyarazi:Ikoreshwa mu bikoresho nka diode, MOSFET, na IGBTs mu gukwirakwiza ingufu z'amashanyarazi mu binyabiziga, mu mashini z'inganda, no mu buryo bw'ingufu zishobora kuvugururwa.
Ikoranabuhanga rya 5G:Kubera ko 5G ikeneye ibice bifite frequency nyinshi kandi bikora neza cyane, ubushobozi bwa SiC bwo gucunga voltage nyinshi no gukora ku bushyuhe bwinshi butuma iba nziza cyane ku byuma bitanga ingufu za station base ndetse n'ibikoresho bya RF.
Sisitemu z'ingufu zikomoka ku mirasire y'izuba:Imiterere myiza ya SiC mu gucunga ingufu ni myiza cyane ku byuma bihindura ingufu z'izuba (photovoltaic power) n'ibihindura ingufu z'izuba.
Imodoka zikoresha amashanyarazi (EV):SiC ikoreshwa cyane mu byuma bitanga ingufu mu buryo bwihuse, mu kugabanya ubushyuhe, no mu kongera ubucucike bw'ingufu.
Imiterere n'ikoreshwa ry'ubwoko bwa SiC Substrate 4H Semi-Insulation
Imitungo:
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Uburyo bwo kugenzura ubucucike budafite imiyoboro ya micropipe: Yemeza ko nta miyoboro mito ihari, ikongera ubwiza bw'ubutaka.
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Uburyo bwo kugenzura bwa monocrystalline: Itanga icyizere cy'uko imiterere y'ikintu kimwe cya kristu izarushaho kuba myiza.
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Uburyo bwo kugenzura ishyirwa mu bikorwa: Bigabanya ubukana bw'imyanda cyangwa ibintu biyirimo, bigatuma habaho substrate itunganye.
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Uburyo bwo kugenzura ubukana bw'ibikomere: Bituma habaho kugenzura neza uburyo amashanyarazi akoreshwa, ibyo bikaba ari ingenzi cyane mu mikorere y'igikoresho.
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Uburyo bwo kugenzura no kugenzura umwanda: Igenzura kandi ikagabanya imyanda yinjira kugira ngo igumane ubuziranenge bw'ubutaka.
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Uburyo bwo kugenzura ubugari bw'intambwe zo hasi: Itanga uburyo bwo kugenzura neza ubugari bw'intambwe, ikerekana ko ihamye ku gice cyose cy'ubutaka
Ibipimo bya substrate ya 4H-semi SiC ya santimetero 6 | ||
| Umutungo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Ingano (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini (um) | 500 ± 15 | 500 ± 25 |
| Icyerekezo cya Wafer | Ku murongo w'impande: ± 0.0001° | Ku murongo w'impande: ± 0.05° |
| Ubucucike bw'imiyoboro mito | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ubushobozi bwo kwirinda (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Icyerekezo cy'ibanze cy'ubugari | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Uburebure bw'ibanze bw'ikiraro | Notch | Notch |
| Kutagaragaza impande (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Igikombe / Igipfunyika | ≤ 3 µm | ≤ 3 µm |
| Ubukana | Igipimo cya Polonye Ra ≤ 1.5 µm | Igipimo cya Polonye Ra ≤ 1.5 µm |
| Udupira tw'inkombe dukoresheje urumuri rwinshi | ≤ 20 µm | ≤ 60 µm |
| Amasahani yo gushyushya akoresheje urumuri rwinshi | Iteranyirizwa hamwe ≤ 0.05% | Iteranyirizwa hamwe ≤ 3% |
| Uduce twa Polytype dukoresheje urumuri rwinshi | Ibikubiye muri karuboni igaragara ≤ 0.05% | Iteranyirizwa hamwe ≤ 3% |
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | ≤ 0.05% | Iteranyirizwa hamwe ≤ 4% |
| Udupira tw'inkombe dukoresheje urumuri rwinshi (Ingano) | Ntibyemewe > 02 mm Ubugari n'Ubujyakuzimu | Ntibyemewe > 02 mm Ubugari n'Ubujyakuzimu |
| Ugukura kw'Insinga z'Ubufasha | ≤ 500 µm | ≤ 500 µm |
| Kwanduzwa n'urumuri rwinshi rwa silicon | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Gupfunyika | Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari | Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari |
Ibisobanuro bya SiC Substrate ifite santimetero 4 na 4H
| Igipimo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
|---|---|---|
| Imiterere Ifatika | ||
| Ingano | mm 99.5 – mm 100.0 | mm 99.5 – mm 100.0 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Icyerekezo cya Wafer | Kuri axis: <600h > 0.5° | Kuri axis: <000h > 0.5° |
| Imiterere y'amashanyarazi | ||
| Ubucucike bw'imiyoboro mito (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ubushobozi bwo kwirinda | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Ubwihangane bwa Jewometiri | ||
| Icyerekezo cy'ibanze cy'ubugari | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Uburebure bw'ibanze bw'ikiraro | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Uburebure bwa kabiri bw'ikiraro | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Icyerekezo cya kabiri cy'icyitegererezo | Ubushyuhe bwa 90° CW uvuye kuri Prime flat ± 5.0° (Si ireba hejuru) | Ubushyuhe bwa 90° CW uvuye kuri Prime flat ± 5.0° (Si ireba hejuru) |
| Kutagaragaza Edge | mm 3 | mm 3 |
| LTV / TTV / Umuheto / Umupfundo | ≤2.5 μ m / ≤5 μ m / ≤15 μ m / ≤30 mm | ≤10 μ m / ≤15 μ m / ≤25 μ m / ≤40 mm |
| Ubwiza bw'ubuso | ||
| Ubukana bw'ubuso (Polène Ra) | ≤1 nm | ≤1 nm |
| Ubukana bw'ubuso (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Uduce tw'inkombe (Urumuri rwinshi) | Ntibyemewe | Uburebure bw'umubyimba ≥10 mm, umuyoboro umwe ≤2 mm |
| Ubusembwa bw'insinga ya hexagonal | ≤0.05% ubuso bw'ikusanyirizo | ≤0.1% by'ubuso bw'ikusanyirizo |
| Uduce twinjijwemo ubwoko bwa polytype | Ntibyemewe | ≤1% by'agace gateranyirijwe hamwe |
| Ibikubiye muri karuboni igaragara | ≤0.05% ubuso bw'ikusanyirizo | ≤1% by'agace gateranyirijwe hamwe |
| Imikufi ya Silicone hejuru | Ntibyemewe | ≤1 uburebure bw'umurambararo wa wafer |
| Udupira two mu mucanga | Nta na kimwe cyemewe (ubugari/ubujyakuzimu bwa ≥0.2 mm) | Uduce ≤5 (buri kimwe ≤1 mm) |
| Kwanduza ubuso bwa silicon | Ntabwo byagaragajwe | Ntabwo byagaragajwe |
| Gupfunyika | ||
| Gupfunyika | Kaseti ifite wafer nyinshi cyangwa agasanduku k'wafer kamwe | Kaseti ya wafer nyinshi cyangwa |
Porogaramu:
ItsindaSiC 4H Semi-Insulation Substrateszikoreshwa cyane cyane mu bikoresho by'ikoranabuhanga bikoresha ingufu nyinshi kandi bikoresha inshuro nyinshi, cyane cyane muAgace ka RFIzi substrates ni ingenzi mu bikorwa bitandukanye birimosisitemu z'itumanaho rya mikoroonde, radar y'amasasu ishyirwa mu byiciro, naibikoresho bipima amashanyarazi bidakoresha insinga.Ubushyuhe bwinshi n'imikorere myiza y'amashanyarazi bituma ziba nziza cyane mu bikorwa bikomeye by'ikoranabuhanga n'itumanaho.
Imiterere n'ikoreshwa rya SiC epi wafer 4H-N
Imiterere n'imikorere ya SiC 4H-N Epi Wafer
Imiterere ya SiC 4H-N Type Epi Wafer:
Imiterere y'ibikoresho:
SiC (Silicon Carbide): Izwiho ubukana bwayo budasanzwe, ubushobozi bwayo bwo gutwara ubushyuhe bwinshi, n'ubushobozi bwayo bwiza bw'amashanyarazi, SiC ni nziza cyane ku bikoresho by'ikoranabuhanga bikora neza.
Ubwoko bwa poliyumu ya 4H-SiC: Polytype ya 4H-SiC izwiho imikorere myiza no kudahungabana mu mikoreshereze yayo y'ikoranabuhanga.
Gukoresha imiti igabanya ubukana bw'ubwoko bwa N: Gukoresha amashanyarazi yo mu bwoko bwa N (irimo azote) bitanga uburyo bwiza bwo kugenda kwa electron, bigatuma SiC ikoreshwa mu gukoresha frequency nyinshi n'imbaraga nyinshi.
Ubushobozi bwo gutwara ubushyuhe bwinshi:
Uduce twa SiC dutwara ubushyuhe bwinshi, akenshi duhereye ku120–200 W/m·K, bikabaha ubushobozi bwo gucunga neza ubushyuhe mu bikoresho bifite ingufu nyinshi nka transistors na diodes.
Icyuho kinini:
Hamwe n'icyuho cya3.26 eV, 4H-SiC ishobora gukora ku muvuduko mwinshi, ku murongo, no ku bushyuhe bwinshi ugereranije n'ibikoresho bisanzwe bishingiye kuri silikoni, bigatuma iba nziza cyane mu bikorwa bifite imikorere myiza kandi ikora neza.
Imiterere y'amashanyarazi:
Uburyo bwo kugenda cyane kwa electron za SiC n'uburyo zitwara amashanyarazi bituma iba nziza kuriamashanyarazi akoreshwa mu by'ikoranabuhanga, itanga umuvuduko wihuta wo guhinduranya ingufu n'ubushobozi bwo gucunga ingufu z'amashanyarazi n'amashanyarazi, bigatuma habaho uburyo bwo gucunga ingufu bunoze kurushaho.
Ubudahangarwa bwa tekiniki n'ubutabire:
SiC ni kimwe mu bikoresho bikomeye cyane, kiza ku mwanya wa kabiri nyuma ya diyama, kandi kirwanya cyane ogisijeni na ingese, bigatuma kiramba mu bidukikije bikomeye.
Imikoreshereze ya SiC 4H-N Type Epi Wafer:
Ingufu z'amashanyarazi:
Uduce twa epi twa SiC 4H-N dukoreshwa cyane muriMOSFET z'ingufu, IGBTs, nadiodekuriguhindura ingufumuri sisitemu nkainverters zikoresha imirasire y'izuba, ibinyabiziga bikoresha amashanyarazi, nasisitemu zo kubika ingufu, bitanga imikorere myiza n'uburyo bwo gukoresha ingufu neza.
Imodoka zikoresha amashanyarazi (EV):
In imashini zikoresha amashanyarazi, abagenzura moteri, nasitasiyo zo gusharija, SiC wafers zifasha mu kunoza imikorere ya bateri, gusharija vuba, no kunoza imikorere y'ingufu muri rusange bitewe n'ubushobozi bwazo bwo guhangana n'ingufu nyinshi n'ubushyuhe bwinshi.
Sisitemu z'ingufu zisubira:
Inverters z'izuba: Uduce twa SiC dukoreshwa murisisitemu z'ingufu zikomoka ku mirasire y'izubamu guhindura ingufu za DC kuva kuri paneli z'izuba zikajya kuri AC, byongerera imikorere myiza n'imikorere muri rusange ya sisitemu.
Turbine z'umuyaga: Ikoranabuhanga rya SiC rikoreshwa murisisitemu zo kugenzura turbine y'umuyaga, kunoza imikorere y'amashanyarazi no kuyahindura mu buryo bunoze.
Ibyerekeye Ikiremba n'Ubwugarizi:
Udupaki twa SiC ni two two gukoreshwa muibikoresho by'ikoranabuhanga mu kirerenaubusabe bwa gisirikare, harimosisitemu za radarnaibikoresho by'ikoranabuhanga bya satelite, aho ubudahangarwa bw'imirasire myinshi n'ubushyuhe buhamye ari ingenzi.
Porogaramu zo gukoresha ubushyuhe bwinshi n'inshuro nyinshi:
Wafer za SiC zirakora neza cyaneikoranabuhanga rigezweho, ikoreshwa murimoteri z'indege, icyogajuru, nasisitemu zo gushyushya mu nganda, kuko zikomeza gukora neza mu gihe cy'ubushyuhe bwinshi. Byongeye kandi, icyuho kinini cyazo cyemerera gukoreshwa muporogaramu zikoreshwa inshuro nyinshinkaIbikoresho bya RFnaitumanaho rya mikoroonde.
| Ibisobanuro bya axial ya epit ya santimetero 6 yo mu bwoko bwa N | |||
| Igipimo | ishami | Z-MOS | |
| Ubwoko | Uburyo bwo kongerera imbaraga (conductivity) / Dopant | - | Ubwoko bwa N / Azote |
| Urukurikirane rw'ibice bifunganye | Ubunini bw'urutonde rw'ibice bya buffer | um | 1 |
| Ubwinshi bw'urutonde rw'ibice bya buffer | % | ± 20% | |
| Ubwinshi bw'Urutonde rw'Ibice by'Umugozi | cm-3 | 1.00E+18 | |
| Kwihanganira kwibanda ku gice cy'inyuma (buffer layer concentration) | % | ± 20% | |
| Icyiciro cya mbere cya Epi | Ubunini bw'urutonde rwa Epi | um | 11.5 |
| Ubunini bw'urutonde rwa Epi Uburinganire | % | ± 4% | |
| Ubwinshi bw'Ibice bya Epi (Epi Layers Tolerance Tolerance) (Ibisobanuro-) Ibisobanuro birambuye (Max ，Ny)/Ibisobanuro) | % | ± 5% | |
| Ubwiyongere bw'Urutonde rwa Epi | cm-3 | 1E 15~ 1E 18 | |
| Kwihanganira kwibanda ku gice cya Epi | % | 6% | |
| Ubwinshi bw'ibipimo bya Epi Layer Concentration (σ /hagati) | % | ≤5% | |
| Ubumwe bw'ibipimo bya Epi Layer Concentration <(umunota ntarengwa)/(umunota ntarengwa+umunota> | % | ≤ 10% | |
| Ishusho ya Epitaixal Wafer | Umuheto | um | ≤±20 |
| WARP | um | ≤30 | |
| Televiziyo ya TV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Ibiranga rusange | Uburebure bw'imikufi | mm | ≤mm30 |
| Udupira two mu mucanga | - | NTA NA RIMWE | |
| Ibisobanuro by'ibinebwe | ≥97% （Yapimwe na 2*2, Inenge z'abicanyi zirimo: Inenge zirimo Imiyoboro mito / Ibinogo binini, Karoti, Impandeshatu | ||
| Kwanduza icyuma | atome/cm² | d f f ll i ≤5E10 atom / cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pake | Ibipimo by'ibipaki | udusanduku/udusanduku | kaseti ifite wafer nyinshi cyangwa agasanduku kamwe ka wafer |
| Ibipimo bya epitaxial ya santimetero 8 zo mu bwoko bwa N | |||
| Igipimo | ishami | Z-MOS | |
| Ubwoko | Uburyo bwo kongerera imbaraga (conductivity) / Dopant | - | Ubwoko bwa N / Azote |
| Urukurikirane rw'ibice bifunga (buffer) | Ubunini bw'urutonde rw'ibice bya buffer | um | 1 |
| Ubwinshi bw'urutonde rw'ibice bya buffer | % | ± 20% | |
| Ubwinshi bw'Urutonde rw'Ibice by'Umugozi | cm-3 | 1.00E+18 | |
| Kwihanganira kwibanda ku gice cy'inyuma (buffer layer concentration) | % | ± 20% | |
| Icyiciro cya mbere cya Epi | Ubunini bw'ibice bya Epi (Epi Layers) Impuzandengo | um | 8 ~ 12 |
| Ubunini bw'ibice bya Epi Ubunini bungana (σ/impuzandengo) | % | ≤2.0 | |
| Ubwinshi bw'Ibice bya Epi Ubwiyongere ((Ibisobanuro -Max, Min)/Ibisobanuro) | % | ± 6 | |
| Impuzandengo y'ikoreshwa ry'imiti igabanya ubukana bw'imisemburo ya Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Ubwinshi bw'imiti ikoreshwa mu gupima Epi Layers (σ/impuzandengo) | % | ≤5 | |
| Epi Layers Net DopingTolerance((Spec -Max， | % | ± 10.0 | |
| Ishusho ya Epitaixal Wafer | Mi )/S ) Ifuro | um | ≤50.0 |
| Umuheto | um | ± 30.0 | |
| Televiziyo ya TV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Rusange Ibiranga | Imikufi | - | Uburebure buhuriweho≤ 1/2 umurambararo wa wafer |
| Udupira two mu mucanga | - | ≤2 utwuma, Buri radius≤1.5mm | |
| Kwanduza ibyuma byo hejuru | atome/cm2 | ≤5E10 atom / cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Igenzura ry'ibisembwa | % | ≥ 96.0 (Inenge 2X2 zirimo imiyoboro mito / Ibinogo binini, Karoti, Ubusembwa bwa mpandeshatu, Kugwa, Linear/IGSF-s, BPD) | |
| Kwanduza ibyuma byo hejuru | atome/cm2 | ≤5E10 atom / cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pake | Ibipimo by'ibipaki | - | kaseti ifite wafer nyinshi cyangwa agasanduku kamwe ka wafer |
Ibibazo n'Ibisubizo bya SiC wafer
Q1: Ni izihe nyungu z'ingenzi zo gukoresha wafer za SiC kuruta wafer za silicon zisanzwe mu bikoresho by'ikoranabuhanga bikoresha ingufu?
A1:
Wafer za SiC zitanga inyungu nyinshi z'ingenzi ugereranyije na wafer za silicon (Si) zisanzwe mu bikoresho by'ikoranabuhanga bikoresha ingufu, harimo:
Ubushobozi bwo hejuru: SiC ifite icyuho kinini (3.26 eV) ugereranije na silicon (1.1 eV), bigatuma ibikoresho bikora ku muvuduko mwinshi, umurongo n'ubushyuhe. Ibi bituma ingufu zigabanuka kandi bigatuma habaho imikorere myiza mu buryo bwo guhindura ingufu.
Ubushobozi bwo gutwara ubushyuhe bwinshi: Uburyo SiC itwara ubushyuhe buri hejuru cyane ugereranyije n’ubwa silikoni, bigatuma ubushyuhe bukwirakwira neza mu bikorwa bifite ingufu nyinshi, ibyo bigatuma ibikoresho bikoresha ingufu birushaho kuba inyangamugayo kandi bigakomeza kubaho.
Umuvuduko mwinshi w'amashanyarazi n'uburyo bwo gucunga umuriro: Ibikoresho bya SiC bishobora guhangana n'amashanyarazi menshi n'ubushyuhe bwinshi, bigatuma bikoreshwa mu gukoresha ingufu nyinshi nk'imodoka zikoresha amashanyarazi, sisitemu z'ingufu zishobora kuvugururwa, n'imodoka zitwara moteri mu nganda.
Umuvuduko wihuta wo guhindura: Ibikoresho bya SiC bifite ubushobozi bwo guhinduranya vuba, bigira uruhare mu kugabanya igihombo cy'ingufu n'ingano ya sisitemu, bigatuma biba byiza cyane mu gukoresha inshuro nyinshi.
Q2: Ni izihe ngamba z'ingenzi za SiC wafers zikoreshwa mu nganda z'imodoka?
A2:
Mu nganda z'imodoka, SiC wafers zikoreshwa cyane cyane muri:
Imashini zikoresha amashanyarazi (EV): Ibice bishingiye kuri SiC nkainvertersnaMOSFET z'ingufukunoza imikorere n'imikorere y'imodoka zikoresha amashanyarazi binyuze mu gutuma umuvuduko wihuta wo guhinduranya imodoka no kongera ingufu. Ibi bituma bateri iramba kandi imodoka ikagira imikorere myiza muri rusange.
Amashaja ari mu bwato: Ibikoresho bya SiC bifasha kunoza imikorere ya sisitemu zo gusharija ziri mu bwato binyuze mu gutuma igihe cyo gusharija cyihuta kandi bigacunga neza ubushyuhe, ibi bikaba ari ingenzi cyane ku modoka zikoresha amashanyarazi kugira ngo zishyigikire ahantu ho gusharija hakoresha ingufu nyinshi.
Sisitemu zo gucunga bateri (BMS): Ikoranabuhanga rya SiC rituma habaho imikorere myizasisitemu zo gucunga bateri, bigatuma habaho uburyo bwiza bwo kugenzura ingufu z'amashanyarazi, gukoresha ingufu nyinshi, no kumara igihe kirekire bateri.
Abahindura DC-DC: Uduce twa SiC dukoreshwa muriAbahindura DC-DCguhindura ingufu za DC zifite voltage nyinshi zikajya kuri DC zifite voltage nkeya mu buryo bunoze, ibi bikaba ari ingenzi cyane mu modoka zikoresha amashanyarazi kugira ngo zicunge ingufu kuva kuri bateri zijya mu bice bitandukanye biri mu modoka.
Kuba SiC ikora neza cyane mu gukoresha ingufu nyinshi, ubushyuhe bwinshi, no gukoresha neza cyane bituma iba ingenzi mu iterambere ry’inganda z’imodoka zikoresha amashanyarazi.
Ibisobanuro bya wafer ya SiC ya santimetero 6 ifite uburebure bwa 4H-N | ||
| Umutungo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Icyiciro | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Ingano | mm 149.5 – mm 150.0 | mm 149.5 – mm 150.0 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Icyerekezo cya Wafer | Umurongo utari hagati y'umurongo n'umurongo: 4.0° ugana <1120> ± 0.5° | Umurongo utari hagati y'umurongo n'umurongo: 4.0° ugana <1120> ± 0.5° |
| Ubucucike bw'imiyoboro mito | ≤ 0.2 cm² | ≤ cm² 15 |
| Ubushobozi bwo kwirinda | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Icyerekezo cy'ibanze cy'ubugari | [10-10] ± 50° | [10-10] ± 50° |
| Uburebure bw'ibanze bw'ikiraro | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Kutagaragaza Edge | mm 3 | mm 3 |
| LTV/TIV / Umuheto / Umupfundo | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Ubukana | Igiporisi Ra ≤ 1 nm | Igiporisi Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imyanya y'inkombe iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 |
| Amasahani ya Hex ashingiye ku rumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 0.1% |
| Uduce twa Polytype dukoresheje urumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 3% |
| Ibikubiye muri karuboni igaragara | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 5% |
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ umurambararo wa wafer 1 | |
| Udupira tw'inkombe dukoresheje urumuri rwinshi | Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥ 0.2 mm | 7 byemewe, ≤ mm 1 buri kimwe |
| Guhindura Screw mu Migozi | < 500 cm³ | < 500 cm³ |
| Kwanduzwa n'urumuri rwinshi rwa silicon | ||
| Gupfunyika | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer |
Ibisobanuro bya wafer ya SiC ya santimetero 8 ya 4H-N | ||
| Umutungo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Icyiciro | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Ingano | mm 199.5 – mm 200.0 | mm 199.5 – mm 200.0 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Icyerekezo cya Wafer | 4.0° ugana <110> ± 0.5° | 4.0° ugana <110> ± 0.5° |
| Ubucucike bw'imiyoboro mito | ≤ 0.2 cm² | ≤ cm² 5 |
| Ubushobozi bwo kwirinda | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Icyerekezo cy'icyubahiro | ||
| Kutagaragaza Edge | mm 3 | mm 3 |
| LTV/TIV / Umuheto / Umupfundo | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Ubukana | Igiporisi Ra ≤ 1 nm | Igiporisi Ra ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Imyanya y'inkombe iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 | Uburebure buhuriweho ≤ mm 20 uburebure bumwe ≤ mm 2 |
| Amasahani ya Hex ashingiye ku rumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 0.1% |
| Uduce twa Polytype dukoresheje urumuri rwinshi | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 3% |
| Ibikubiye muri karuboni igaragara | Agace k'ikusanyirizo ≤ 0.05% | Agace k'ikusanyirizo ≤ 5% |
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | Uburebure buhuriweho ≤ umurambararo wa wafer 1 | |
| Udupira tw'inkombe dukoresheje urumuri rwinshi | Nta na kimwe cyemewe ubugari n'ubujyakuzimu bwa ≥ 0.2 mm | 7 byemewe, ≤ mm 1 buri kimwe |
| Guhindura Screw mu Migozi | < 500 cm³ | < 500 cm³ |
| Kwanduzwa n'urumuri rwinshi rwa silicon | ||
| Gupfunyika | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer | Kaseti ya wafer nyinshi cyangwa icupa rimwe rya wafer |
Ibipimo bya substrate ya 4H-semi SiC ya santimetero 6 | ||
| Umutungo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
| Ingano (mm) | mm 145 – mm 150 | mm 145 – mm 150 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini (um) | 500 ± 15 | 500 ± 25 |
| Icyerekezo cya Wafer | Ku murongo w'impande: ± 0.0001° | Ku murongo w'impande: ± 0.05° |
| Ubucucike bw'imiyoboro mito | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ubushobozi bwo kwirinda (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Icyerekezo cy'ibanze cy'ubugari | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Uburebure bw'ibanze bw'ikiraro | Notch | Notch |
| Kutagaragaza impande (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Igikombe / Igipfunyika | ≤ 3 µm | ≤ 3 µm |
| Ubukana | Igipimo cya Polonye Ra ≤ 1.5 µm | Igipimo cya Polonye Ra ≤ 1.5 µm |
| Udupira tw'inkombe dukoresheje urumuri rwinshi | ≤ 20 µm | ≤ 60 µm |
| Amasahani yo gushyushya akoresheje urumuri rwinshi | Iteranyirizwa hamwe ≤ 0.05% | Iteranyirizwa hamwe ≤ 3% |
| Uduce twa Polytype dukoresheje urumuri rwinshi | Ibikubiye muri karuboni igaragara ≤ 0.05% | Iteranyirizwa hamwe ≤ 3% |
| Imiterere y'ubuso bwa Silicone iterwa n'urumuri rwinshi | ≤ 0.05% | Iteranyirizwa hamwe ≤ 4% |
| Udupira tw'inkombe dukoresheje urumuri rwinshi (Ingano) | Ntibyemewe > 02 mm Ubugari n'Ubujyakuzimu | Ntibyemewe > 02 mm Ubugari n'Ubujyakuzimu |
| Ugukura kw'Insinga z'Ubufasha | ≤ 500 µm | ≤ 500 µm |
| Kwanduzwa n'urumuri rwinshi rwa silicon | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Gupfunyika | Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari | Kaseti y'isukari nyinshi cyangwa isanduku imwe y'isukari |
Ibisobanuro bya SiC Substrate ifite santimetero 4 na 4H
| Igipimo | Ingano y'umusaruro wa MPD ntarengwa (Ingano ya Z) | Icyiciro cy'indorerwamo (Icyiciro cya D) |
|---|---|---|
| Imiterere Ifatika | ||
| Ingano | mm 99.5 – mm 100.0 | mm 99.5 – mm 100.0 |
| Ubwoko bwa poli | 4H | 4H |
| Ubunini | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Icyerekezo cya Wafer | Kuri axis: <600h > 0.5° | Kuri axis: <000h > 0.5° |
| Imiterere y'amashanyarazi | ||
| Ubucucike bw'imiyoboro mito (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ubushobozi bwo kwirinda | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Ubwihangane bwa Jewometiri | ||
| Icyerekezo cy'ibanze cy'ubugari | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Uburebure bw'ibanze bw'ikiraro | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Uburebure bwa kabiri bw'ikiraro | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Icyerekezo cya kabiri cy'icyitegererezo | Ubushyuhe bwa 90° CW uvuye kuri Prime flat ± 5.0° (Si ireba hejuru) | Ubushyuhe bwa 90° CW uvuye kuri Prime flat ± 5.0° (Si ireba hejuru) |
| Kutagaragaza Edge | mm 3 | mm 3 |
| LTV / TTV / Umuheto / Umupfundo | ≤2.5 μ m / ≤5 μ m / ≤15 μ m / ≤30 mm | ≤10 μ m / ≤15 μ m / ≤25 μ m / ≤40 mm |
| Ubwiza bw'ubuso | ||
| Ubukana bw'ubuso (Polène Ra) | ≤1 nm | ≤1 nm |
| Ubukana bw'ubuso (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Uduce tw'inkombe (Urumuri rwinshi) | Ntibyemewe | Uburebure bw'umubyimba ≥10 mm, umuyoboro umwe ≤2 mm |
| Ubusembwa bw'insinga ya hexagonal | ≤0.05% ubuso bw'ikusanyirizo | ≤0.1% by'ubuso bw'ikusanyirizo |
| Uduce twinjijwemo ubwoko bwa polytype | Ntibyemewe | ≤1% by'agace gateranyirijwe hamwe |
| Ibikubiye muri karuboni igaragara | ≤0.05% ubuso bw'ikusanyirizo | ≤1% by'agace gateranyirijwe hamwe |
| Imikufi ya Silicone hejuru | Ntibyemewe | ≤1 uburebure bw'umurambararo wa wafer |
| Udupira two mu mucanga | Nta na kimwe cyemewe (ubugari/ubujyakuzimu bwa ≥0.2 mm) | Uduce ≤5 (buri kimwe ≤1 mm) |
| Kwanduza ubuso bwa silicon | Ntabwo byagaragajwe | Ntabwo byagaragajwe |
| Gupfunyika | ||
| Gupfunyika | Kaseti ifite wafer nyinshi cyangwa agasanduku k'wafer kamwe | Kaseti ya wafer nyinshi cyangwa |
| Ibisobanuro bya axial ya epit ya santimetero 6 yo mu bwoko bwa N | |||
| Igipimo | ishami | Z-MOS | |
| Ubwoko | Uburyo bwo kongerera imbaraga (conductivity) / Dopant | - | Ubwoko bwa N / Azote |
| Urukurikirane rw'ibice bifunganye | Ubunini bw'urutonde rw'ibice bya buffer | um | 1 |
| Ubwinshi bw'urutonde rw'ibice bya buffer | % | ± 20% | |
| Ubwinshi bw'Urutonde rw'Ibice by'Umugozi | cm-3 | 1.00E+18 | |
| Kwihanganira kwibanda ku gice cy'inyuma (buffer layer concentration) | % | ± 20% | |
| Icyiciro cya mbere cya Epi | Ubunini bw'urutonde rwa Epi | um | 11.5 |
| Ubunini bw'urutonde rwa Epi Uburinganire | % | ± 4% | |
| Ubwinshi bw'Ibice bya Epi (Epi Layers Tolerance Tolerance) (Ibisobanuro-) Ibisobanuro birambuye (Max ，Ny)/Ibisobanuro) | % | ± 5% | |
| Ubwiyongere bw'Urutonde rwa Epi | cm-3 | 1E 15~ 1E 18 | |
| Kwihanganira kwibanda ku gice cya Epi | % | 6% | |
| Ubwinshi bw'ibipimo bya Epi Layer Concentration (σ /hagati) | % | ≤5% | |
| Ubumwe bw'ibipimo bya Epi Layer Concentration <(umunota ntarengwa)/(umunota ntarengwa+umunota> | % | ≤ 10% | |
| Ishusho ya Epitaixal Wafer | Umuheto | um | ≤±20 |
| WARP | um | ≤30 | |
| Televiziyo ya TV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Ibiranga rusange | Uburebure bw'imikufi | mm | ≤mm30 |
| Udupira two mu mucanga | - | NTA NA RIMWE | |
| Ibisobanuro by'ibinebwe | ≥97% （Yapimwe na 2*2, Inenge z'abicanyi zirimo: Inenge zirimo Imiyoboro mito / Ibinogo binini, Karoti, Impandeshatu | ||
| Kwanduza icyuma | atome/cm² | d f f ll i ≤5E10 atom / cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pake | Ibipimo by'ibipaki | udusanduku/udusanduku | kaseti ifite wafer nyinshi cyangwa agasanduku kamwe ka wafer |
| Ibipimo bya epitaxial ya santimetero 8 zo mu bwoko bwa N | |||
| Igipimo | ishami | Z-MOS | |
| Ubwoko | Uburyo bwo kongerera imbaraga (conductivity) / Dopant | - | Ubwoko bwa N / Azote |
| Urukurikirane rw'ibice bifunga (buffer) | Ubunini bw'urutonde rw'ibice bya buffer | um | 1 |
| Ubwinshi bw'urutonde rw'ibice bya buffer | % | ± 20% | |
| Ubwinshi bw'Urutonde rw'Ibice by'Umugozi | cm-3 | 1.00E+18 | |
| Kwihanganira kwibanda ku gice cy'inyuma (buffer layer concentration) | % | ± 20% | |
| Icyiciro cya mbere cya Epi | Ubunini bw'ibice bya Epi (Epi Layers) Impuzandengo | um | 8 ~ 12 |
| Ubunini bw'ibice bya Epi Ubunini bungana (σ/impuzandengo) | % | ≤2.0 | |
| Ubwinshi bw'Ibice bya Epi Ubwiyongere ((Ibisobanuro -Max, Min)/Ibisobanuro) | % | ± 6 | |
| Impuzandengo y'ikoreshwa ry'imiti igabanya ubukana bw'imisemburo ya Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Ubwinshi bw'imiti ikoreshwa mu gupima Epi Layers (σ/impuzandengo) | % | ≤5 | |
| Epi Layers Net DopingTolerance((Spec -Max， | % | ± 10.0 | |
| Ishusho ya Epitaixal Wafer | Mi )/S ) Ifuro | um | ≤50.0 |
| Umuheto | um | ± 30.0 | |
| Televiziyo ya TV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Rusange Ibiranga | Imikufi | - | Uburebure buhuriweho≤ 1/2 umurambararo wa wafer |
| Udupira two mu mucanga | - | ≤2 utwuma, Buri radius≤1.5mm | |
| Kwanduza ibyuma byo hejuru | atome/cm2 | ≤5E10 atom / cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Igenzura ry'ibisembwa | % | ≥ 96.0 (Inenge 2X2 zirimo imiyoboro mito / Ibinogo binini, Karoti, Ubusembwa bwa mpandeshatu, Kugwa, Linear/IGSF-s, BPD) | |
| Kwanduza ibyuma byo hejuru | atome/cm2 | ≤5E10 atom / cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Pake | Ibipimo by'ibipaki | - | kaseti ifite wafer nyinshi cyangwa agasanduku kamwe ka wafer |
Q1: Ni izihe nyungu z'ingenzi zo gukoresha wafer za SiC kuruta wafer za silicon zisanzwe mu bikoresho by'ikoranabuhanga bikoresha ingufu?
A1:
Wafer za SiC zitanga inyungu nyinshi z'ingenzi ugereranyije na wafer za silicon (Si) zisanzwe mu bikoresho by'ikoranabuhanga bikoresha ingufu, harimo:
Ubushobozi bwo hejuru: SiC ifite icyuho kinini (3.26 eV) ugereranije na silicon (1.1 eV), bigatuma ibikoresho bikora ku muvuduko mwinshi, umurongo n'ubushyuhe. Ibi bituma ingufu zigabanuka kandi bigatuma habaho imikorere myiza mu buryo bwo guhindura ingufu.
Ubushobozi bwo gutwara ubushyuhe bwinshi: Uburyo SiC itwara ubushyuhe buri hejuru cyane ugereranyije n’ubwa silikoni, bigatuma ubushyuhe bukwirakwira neza mu bikorwa bifite ingufu nyinshi, ibyo bigatuma ibikoresho bikoresha ingufu birushaho kuba inyangamugayo kandi bigakomeza kubaho.
Umuvuduko mwinshi w'amashanyarazi n'uburyo bwo gucunga umuriro: Ibikoresho bya SiC bishobora guhangana n'amashanyarazi menshi n'ubushyuhe bwinshi, bigatuma bikoreshwa mu gukoresha ingufu nyinshi nk'imodoka zikoresha amashanyarazi, sisitemu z'ingufu zishobora kuvugururwa, n'imodoka zitwara moteri mu nganda.
Umuvuduko wihuta wo guhindura: Ibikoresho bya SiC bifite ubushobozi bwo guhinduranya vuba, bigira uruhare mu kugabanya igihombo cy'ingufu n'ingano ya sisitemu, bigatuma biba byiza cyane mu gukoresha inshuro nyinshi.
Q2: Ni izihe ngamba z'ingenzi za SiC wafers zikoreshwa mu nganda z'imodoka?
A2:
Mu nganda z'imodoka, SiC wafers zikoreshwa cyane cyane muri:
Imashini zikoresha amashanyarazi (EV): Ibice bishingiye kuri SiC nkainvertersnaMOSFET z'ingufukunoza imikorere n'imikorere y'imodoka zikoresha amashanyarazi binyuze mu gutuma umuvuduko wihuta wo guhinduranya imodoka no kongera ingufu. Ibi bituma bateri iramba kandi imodoka ikagira imikorere myiza muri rusange.
Amashaja ari mu bwato: Ibikoresho bya SiC bifasha kunoza imikorere ya sisitemu zo gusharija ziri mu bwato binyuze mu gutuma igihe cyo gusharija cyihuta kandi bigacunga neza ubushyuhe, ibi bikaba ari ingenzi cyane ku modoka zikoresha amashanyarazi kugira ngo zishyigikire ahantu ho gusharija hakoresha ingufu nyinshi.
Sisitemu zo gucunga bateri (BMS): Ikoranabuhanga rya SiC rituma habaho imikorere myizasisitemu zo gucunga bateri, bigatuma habaho uburyo bwiza bwo kugenzura ingufu z'amashanyarazi, gukoresha ingufu nyinshi, no kumara igihe kirekire bateri.
Abahindura DC-DC: Uduce twa SiC dukoreshwa muriAbahindura DC-DCguhindura ingufu za DC zifite voltage nyinshi zikajya kuri DC zifite voltage nkeya mu buryo bunoze, ibi bikaba ari ingenzi cyane mu modoka zikoresha amashanyarazi kugira ngo zicunge ingufu kuva kuri bateri zijya mu bice bitandukanye biri mu modoka.
Kuba SiC ikora neza cyane mu gukoresha ingufu nyinshi, ubushyuhe bwinshi, no gukoresha neza cyane bituma iba ingenzi mu iterambere ry’inganda z’imodoka zikoresha amashanyarazi.
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