SiC substrate P-ubwoko bwa 4H / 6H-P 3C-N 4inch hamwe nubunini bwa 350um Umusaruro wo mucyiciro cya Dummy

SiC substrate P-ubwoko bwa 4H / 6H-P 3C-N 4inch hamwe nubunini bwa 350um Umusaruro wo mu rwego rwa Dummy urwego rwerekana Ishusho

Ibisobanuro bigufi:

Ubwoko bwa P-4H / 6H-P 3C-N 4-inimero ya SiC substrate, hamwe nubugari bwa 350 mm, ni ibikoresho bya semiconductor ikora cyane bikoreshwa cyane mugukora ibikoresho bya elegitoroniki. Azwiho kuba idasanzwe yubushyuhe bwumuriro, imbaraga zo kumeneka cyane, hamwe no guhangana nubushyuhe bukabije nibidukikije byangirika, iyi substrate nibyiza kubikorwa bya elegitoroniki ikoreshwa. Umusaruro-urwego rwumusaruro ukoreshwa mubikorwa binini binini, bigenzura neza ubuziranenge no kwizerwa cyane mubikoresho bya elegitoroniki bigezweho. Hagati aho, dummy-urwego substrate ikoreshwa cyane cyane mugukemura ibibazo, kugenzura ibikoresho, hamwe na prototyping. Imiterere isumba izindi ya SiC ituma ihitamo ryiza kubikoresho bikoresha ubushyuhe bwo hejuru, voltage nyinshi, hamwe nibidukikije byinshi, harimo ibikoresho byamashanyarazi na sisitemu ya RF.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

4inch SiC substrate P-ubwoko bwa 4H / 6H-P 3C-N imbonerahamwe

4 Uburebure bwa diameter SiliconCarbide (SiC) Substrate Ibisobanuro

Icyiciro			Umusaruro wa MPD Zeru Icyiciro (Z. Icyiciro)	Umusaruro usanzwe Icyiciro (P. Icyiciro)	Dummy Grade (D Icyiciro)
Diameter			99,5 mm ~ 100.0 mm
Umubyimba			350 mm ± 25 mm
Icyerekezo cya Wafer			Off axis: 2.0 ° -4.0 ° yerekeza kuri [112(-)0] ± 0.5 ° kuri 4H / 6H-P, On umurongo: 〈111〉 ± 0.5 ° kuri 3C-N
Ubucucike bwa Micropipe			0 cm-2
Kurwanya	p-ubwoko bwa 4H / 6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-ubwoko bwa 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Icyerekezo Cyibanze		4H / 6H-P	- 1010} ± 5.0 °
		3C-N	- {110} ± 5.0 °
Uburebure bwibanze			32,5 mm ± 2,2 mm
Uburebure bwa kabiri			18.0 mm ± 2,2 mm
Icyerekezo cya kabiri cya Flat			Silicon ireba hejuru: 90 ° CW. kuva muri etage±5.0 °
Guhezwa			Mm 3		Mm 6
LTV / TTV / Umuheto / Intambara			≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm		≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
Ubugome			Igipolonye Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Impande Zimenetse Kumucyo mwinshi			Nta na kimwe		Uburebure bwa mm 10 mm, uburebure bumwe mm2 mm
Isahani ya Hex Kumucyo mwinshi			Agace kegeranye ≤0.05%		Agace kegeranye ≤0.1%
Uturere twa Polytype Kumucyo mwinshi			Nta na kimwe		Agace kegeranye ≤3%
Amashusho ya Carbone			Agace kegeranye ≤0.05%		Agace kegeranye ≤3%
Igishushanyo cya Silicon Igishushanyo Cyinshi Cyumucyo			Nta na kimwe		Uburebure bwuzuye≤1 × wafer diameter
Imipira yo ku mpande hejuru yumucyo mwinshi			Ntanumwe wemerewe ≥0.2mm y'ubugari n'uburebure		5 byemewe, mm1 mm imwe imwe
Ubuso bwa Silicon Yanduye Kubwinshi			Nta na kimwe
Gupakira			Multi-wafer Cassette cyangwa Igikoresho kimwe cya Wafer

Inyandiko:

Limits Imipaka ntarengwa ikoreshwa kuri wafer yose usibye agace kegeranye. # Igishushanyo kigomba kugenzurwa kuri Si isura gusa.

Ubwoko bwa P-4H / 6H-P 3C-N 4-inimero ya SiC substrate ifite ubugari bwa mm 350 ikoreshwa cyane mubikorwa bya elegitoroniki n’amashanyarazi bigezweho. Hamwe nubushuhe buhebuje bwumuriro, imbaraga zo kumeneka cyane, hamwe no kurwanya cyane ibidukikije bikabije, iyi substrate nibyiza kubikorwa bya elegitoroniki ikora cyane nka voltage nini cyane, inverter, nibikoresho bya RF. Ibicuruzwa-byo mu rwego rwo hejuru bikoreshwa mu nganda nini nini, byemeza imikorere yizewe, yuzuye-yuzuye neza, ibyo bikaba ari ingenzi kubikoresho bya elegitoroniki nimbaraga zikoreshwa cyane. Ku rundi ruhande, ibyiciro bya Dummy, bikoreshwa cyane cyane muguhindura gahunda, kugerageza ibikoresho, no guteza imbere prototype, bifasha kugumya kugenzura ubuziranenge no guhuza ibikorwa mubikorwa bya semiconductor.

Ibisobanuro Ibyiza bya N-bwoko bwa SiC igizwe na substrate zirimo

Ubushyuhe bwo hejuru cyane: Gukwirakwiza ubushyuhe neza bituma substrate iba nziza kubushyuhe bwo hejuru hamwe nimbaraga nyinshi.
Umuvuduko mwinshi wo kumeneka: Gushyigikira imikorere ya voltage nyinshi, kwemeza kwizerwa mubikoresho bya elegitoroniki nibikoresho bya RF.
Kurwanya Ibidukikije: Kuramba mubihe bikabije nkubushyuhe bwo hejuru nibidukikije byangirika, byemeza imikorere irambye.
Umusaruro-Icyiciro Cyuzuye: Iremeza imikorere myiza kandi yizewe mubikorwa binini binini, bikwiranye nimbaraga zateye imbere hamwe na RF ikoreshwa.
Dummy-Grade yo Kwipimisha: Gushoboza uburyo bunoze bwo guhitamo, kugerageza ibikoresho, hamwe na prototyping utabangamiye waferi yo mu rwego rwo hejuru.

Muri rusange, P-ubwoko bwa 4H / 6H-P 3C-N 4-inimero ya SiC substrate hamwe nubunini bwa 350 mm itanga inyungu zikomeye kubikorwa bya elegitoroniki ikora cyane. Ubushyuhe bwo hejuru bwumuriro hamwe na voltage yameneka bituma biba byiza kubububasha bukomeye nubushyuhe bwo hejuru, mugihe irwanya ibihe bibi bituma iramba kandi yizewe. Ibicuruzwa-byo mu rwego rwo hejuru byerekana neza imikorere ihamye yo gukora amashanyarazi nini n'ibikoresho bya RF. Hagati aho, dummy-urwego rwibanze ni ngombwa muguhindura gahunda, kugerageza ibikoresho, hamwe na prototyping, gushyigikira kugenzura ubuziranenge no guhora mubikorwa bya semiconductor. Ibiranga bituma SiC substrates ihindagurika cyane kubikorwa byiterambere.