Inzu ntoya
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SiC substrate ifite ubugari bwa santimetero 3 na 350 umubyimba wa HPSI ubwoko bwa Prime Grade Dummy Grade
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Silicon Carbide SiC Ingot 6inch N ubwoko bwa Dummy/prime grade uburebure bushobora kuba bwarahinduwe
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Ingot 6 za Silicon Carbide 4H-SiC Semi-Insulation, Dummy Grade
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Ubwoko bwa SiC Ingot 4H Dia 4inch 6inch Ubunini 5-10mm Ubushakashatsi / Igipimo cy'udushushanyo
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Safiro ya santimetero 6 ya Boule ya safiro idafite ibara rimwe Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Ubwoko bwo gukomera cyane no kurwanya ingese Prime Grade Polishing
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Silicon Carbide Wafer ya 6H-N Ubwoko bwa Prime Grade Research Grade Dummy Grade 330μm 430μm Ubunini
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Igice cya silikoni carbide cya santimetero 2 gifite umurambararo wa 6H-N ufite impande ebyiri ukozwe mu buryo bwa polished, gifite uburebure bwa mm 50.8.
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ubwoko bwa p 4H/6H-P 3C-N Ubwoko bwa SIC substrate 4inch 〈111〉± 0.5° Zero MPD
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SiC substrate P-type 4H/6H-P 3C-N 4inch withe ubugari bwa 350um grade grade Dummy grade
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4H/6H-P 6inch SiC wafer Zero MPD grade Production Grade Dummy Grade
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Wafer ya P-type SiC 4H/6H-P 3C-N ifite ubugari bwa santimetero 6 na 350 μm ifite icyerekezo cy'ibanze