200mm 8inch GaN kuri safiro Epi-layer wafer substrate

Ibisobanuro bigufi:

Igikorwa cyo gukora kirimo gukura kwa epitaxial ya gati ya GaN kumurongo wa safiro ukoresheje tekiniki zigezweho suchas ibyuma-nganda biva mu bicu biva mu kirere (MOCVD) cyangwa epitaxy ya molekulari (MBE). Kubitsa bikorwa mubihe byagenzuwe kugirango harebwe ubuziranenge bwa kirisiti hamwe na firime.

Ohereza imeri kuri twe

Ibicuruzwa birambuye

Ibicuruzwa

Kumenyekanisha ibicuruzwa

Ubuso bwa santimetero 8 GaN-kuri-safiro ni ibikoresho byujuje ubuziranenge bwo mu rwego rwo hejuru bigizwe na Gallium Nitride (GaN) igizwe na safiro. Ibi bikoresho bitanga ibikoresho byiza bya elegitoroniki kandi nibyiza muguhimba amashanyarazi menshi-yumurongo wa semiconductor ibikoresho.

Uburyo bwo gukora

Porogaramu

Ubuso bwa santimetero 8 GaN-kuri-Sapphire isanga porogaramu nini mubice bitandukanye birimo itumanaho rya microwave, radarsystems, tekinoroji idafite umugozi, na optoelectronics. Bimwe mubisabwa bisanzwe birimo:

1. Amashanyarazi ya RF

Inganda zimurika

3. Ibikoresho byitumanaho bitagira umurongo

4. Ibikoresho bya elegitoronike kubushyuhe bwo hejuru

5. Oibikoresho bya ptoelectronic

Ibicuruzwa byihariye

-Igipimo: Ingano ya substrate ni santimetero 8 (200 mm) z'umurambararo.

- Ubwiza bwubuso: Ubuso busizwe neza kurwego rwo hejuru rworoshye kandi bugaragaza ubwiza bwindorerwamo.

- Ubunini: Ubunini bwa GaN burashobora gutegurwa hashingiwe kubisabwa byihariye.

- Gupakira: Substrate yapakiwe neza mubikoresho birwanya static kugirango wirinde kwangirika mugihe cyo gutambuka.

- Icyerekezo cya Flat: Substrate ifite icyerekezo cyihariye cyo gufasha muguhuza wafer no gutunganya mugihe cyo guhimba ibikoresho.

- Ibindi bipimo: Umwihariko wubugari, kurwanya, hamwe no kwibanda kuri dopant birashobora guhuzwa nkuko abakiriya babisabwa.

Hamwe nibikoresho byayo byiza hamwe nibisabwa byinshi, 8-cm ya GaN-kuri-safiro substrate ni amahitamo yizewe yo guteza imbere ibikoresho bya semiconductor ikora cyane mubikorwa bitandukanye.

Usibye GaN-Kuri-Sapphire, dushobora kandi gutanga mubijyanye no gukoresha ibikoresho byamashanyarazi, umuryango wibicuruzwa urimo waferi ya santimetero 8 za AlGaN / GaN-kuri-Si na epitaxial 8-P-cap AlGaN / GaN-kuri-Si wafers. Muri icyo gihe, twahinduye udushya twifashishije tekinoroji yacyo ya 8 ya GaN epitaxy ya tekinoroji mu murima wa microwave, tunateza imbere wafer ya santimetero 8 AlGaN / GAN-kuri-HR Si epitaxy wafer ihuza imikorere nini nubunini bunini, igiciro gito kandi bihujwe no gutunganya ibikoresho bisanzwe-8. Usibye nitride ya silikoni ishingiye kuri silikoni, dufite n'umurongo wibicuruzwa bya AlGaN / GaN-kuri-SiC epitaxial wafers kugirango tubone ibyo abakiriya bakeneye kuri silicon ishingiye kuri gallium nitride ibikoresho bya epitaxial.