GaN ya 200mm ya santimetero 8 kuri substrate ya safiro Epi-layer wafer
Intangiriro y'ibicuruzwa
Iyi substrate ya GaN-on-Sapphire ya santimetero 8 ni ibikoresho bya semiconductor byiza cyane bigizwe n'urwego rwa Gallium Nitride (GaN) ruhingwa kuri substrate ya Sapphire. Iyi gikoresho itanga ubushobozi bwiza bwo gutwara ibintu hakoreshejwe ikoranabuhanga kandi ni nziza cyane mu gukora ibikoresho bya semiconductor bifite imbaraga nyinshi kandi bikoresha frequency nyinshi.
Uburyo bwo gukora
Uburyo bwo gukora bukubiyemo gukura kwa epitaxial kw'urwego rwa GaN ku gice cya Sapphire hakoreshejwe uburyo bugezweho nka metal-organic chemical vapor deposition (MOCVD) cyangwa molekile epitaxy (MBE). Gushyiramo bikorwa mu buryo bugenzurwa kugira ngo harebwe ubwiza bwa kristale buri hejuru kandi filime ihuze.
Porogaramu
Iyi substrate ya GaN-on-Sapphire ya santimetero 8 ikoreshwa cyane mu nzego zitandukanye zirimo itumanaho rya mikoroonde, radar systems, ikoranabuhanga ritagira umugozi, na optoelectronics. Zimwe mu porogaramu zisanzwe zirimo:
1. Ibyongeramusaruro by'ingufu za RF
2. Inganda zikora amatara ya LED
3. Ibikoresho by'itumanaho ridafite umugozi
4. Ibikoresho by'ikoranabuhanga byo mu bidukikije bishyuha cyane
5. Oibikoresho bya ptoelectronic
Ibisobanuro by'ibicuruzwa
-Ingano: Ingano y'ubutaka ifite umurambararo wa santimetero 200 (200 mm).
- Ubwiza bw'ubuso: Ubuso burangwa no koroha cyane kandi bugaragaza ubwiza buhebuje nk'ubw'indorerwamo.
- Ubunini: Ubunini bw'urwego rwa GaN bushobora guhindurwa hashingiwe ku bisabwa byihariye.
- Gupfunyika: Uduce dupfunyitse neza mu bikoresho birwanya static kugira ngo hirindwe kwangirika mu gihe cyo kunyuramo.
- Icyerekezo cy'aho ibintu biherereye: Icyerekezo gifite icyerekezo cyihariye gifasha mu guhuza no gucunga wafer mu gihe cyo gukora igikoresho.
- Izindi parametre: Ibiranga ubunini, ubushobozi bwo guhangana n'ibinyabutabire, n'ingano yabyo bishobora guhindurwa hakurikijwe ibyo umukiriya akeneye.
Kubera imiterere yayo myiza y’ibikoresho n’ikoreshwa ryayo ritandukanye, iyi substrate ya GaN-on-Sapphire ya santimetero 8 ni amahitamo yizewe yo guteza imbere ibikoresho bya semiconductor bikora neza mu nganda zitandukanye.
Uretse GaN-On-Sapphire, dushobora no gutanga mu rwego rwo gukoresha ibikoresho by'amashanyarazi, umuryango w'ibicuruzwa urimo wafers za AlGaN/GaN-on-Si epitaxial za santimetero 8 na wafers za AlGaN/GaN-on-Si epitaxial za santimetero 8. Muri icyo gihe, twavumbuye uburyo bwo gukoresha ikoranabuhanga ryacu rigezweho rya GaN epitaxy rya santimetero 8 mu rwego rwo gukoresha mikoroonde, tunakora wafers za AlGaN/GAN-on-HR Si epitaxy za santimetero 8 zihuza imikorere myiza n'ingano nini, ihendutse kandi ijyanye n'uburyo busanzwe bwo gutunganya ibikoresho bya santimetero 8. Uretse gallium nitride ishingiye kuri silicon, dufite kandi ubwoko bw'ibicuruzwa bya wafers za epitaxial za AlGaN/GaN-on-SiC kugira ngo zihuze n'ibyo abakiriya bakeneye ku bikoresho bya gallium nitride epitaxial bishingiye kuri silicon.
Ishusho irambuye
