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Udupira twa Silicon Carbide Wafers twa santimetero 3 dukingira ubushyuhe bwinshi (HPSl)

Ishusho ya Silicon Carbide Wafers ifite santimetero 3 zo mu bwoko bwa “High Purity” (Idafunze) ifite ubushobozi bwo gukingira “Semi-Insulating Sic Substrates” (HPSl)
  • Udupira twa Silicon Carbide Wafers twa santimetero 3 dukingira ubushyuhe bwinshi (HPSl)
  • Udupira twa Silicon Carbide Wafers twa santimetero 3 dukingira ubushyuhe bwinshi (HPSl)
  • Udupira twa Silicon Carbide Wafers twa santimetero 3 dukingira ubushyuhe bwinshi (HPSl)
  • Udupira twa Silicon Carbide Wafers twa santimetero 3 dukingira ubushyuhe bwinshi (HPSl)

Ibisobanuro bigufi:

Wafer ya Silicon Carbide (SiC) ifite santimetero 3 ni substrate nziza cyane yakozwe mu buryo bukoresha ingufu nyinshi, frequency nyinshi, na optoelectronic. Iyi wafers, ikozwe mu bikoresho bya 4H-SiC bidafunguye kandi bifite pure nyinshi, igaragaza ubushobozi bwiza bwo gutwara ubushyuhe, icyuho kinini, n'imiterere idasanzwe yo gukingira, bigatuma iba ingenzi mu iterambere ry'ibikoresho bigezweho. Kubera ko ifite imiterere myiza kandi ifite ubuziranenge bw'ubuso, substrates za HPSI SiC ni ishingiro ry'ikoranabuhanga rigezweho mu nganda zikoresha ingufu z'amashanyarazi, itumanaho, n'indege, zishyigikira udushya mu nzego zitandukanye.


Ibiranga

Imitungo

1. Imiterere y'imiterere n'imiterere
●Ubwoko bw'ibikoresho: Isuku nyinshi (Idafunze) Silicon Carbide (SiC)
●Ubugari: santimetero 76.2 (76.2 mm)
●Ubunini: 0.33-0.5 mm, ishobora guhindurwa hakurikijwe ibisabwa mu ikoreshwa.
●Imiterere ya Crystal: 4H-SiC polytype ifite agace ka hexagonal, izwiho kugenda cyane kwa electron no kudahindagurika k'ubushyuhe.
●Icyerekezo:
oStandard: [0001] (C-plane), ikwiriye gukoreshwa mu buryo butandukanye.
oUburyo bwo guhitamo: Kurebera kure (4° cyangwa 8°) kugira ngo hongerwe iterambere ry’ibice by’ibikoresho.
●Ubugari: Ihindagurika ry'ubugari bwose (TTV) ● Ubwiza bw'ubuso:
oYahinduwe kugeza kuri oUbucucike buke (<10/cm²) bw'imiyoboro mito. 2. Imiterere y'amashanyarazi ●Uburinzi: >109^99 Ω·cm, ikomeza gukoreshwa no gukuraho ibikoresho byabugenewe.
●Ingufu za Dielectric: Ingufu za Dielectric zigumana ingufu nyinshi kandi zitakaza ingufu za Dielectric nke, ni nziza cyane ku ngufu nyinshi.
●Ubushyuhe butwara umuriro: 3.5-4.9 W/cm·K, butuma ubushyuhe bukwirakwira neza mu bikoresho bikora neza.

3. Imiterere y'ubushyuhe n'imikorere ya mekanike
●Umugozi munini: 3.26 eV, ushyigikira imikorere yayo mu gihe cy'amashanyarazi menshi, ubushyuhe bwinshi, n'imirasire myinshi.
●Ubukomere: Igipimo cya Mohs cya 9, gitanga imbaraga mu guhangana n'ingufu za mekanike mu gihe cyo kuzitunganya.
●Ingano y'ubushyuhe: 4.2×10−6/K4.2 \inshuro 10^{-6}/\text{K}4.2×10−6/K, bishimangira ko ingano y'ubushyuhe ihamye.

Igipimo

Icyiciro cy'umusaruro

Icyiciro cy'ubushakashatsi

Impamyabumenyi y'ikinyoma

Ishami
Icyiciro Icyiciro cy'umusaruro Icyiciro cy'ubushakashatsi Impamyabumenyi y'ikinyoma  
Ingano 76.2 ± 0.5 76.2 ± 0.5 76.2 ± 0.5 mm
Ubunini 500 ± 25 500 ± 25 500 ± 25 µm
Icyerekezo cya Wafer Kuri axis: <0001> ± 0.5° Kuri axis: <0001> ± 2.0° Kuri axis: <0001> ± 2.0° impamyabumenyi
Ubucucike bw'imiyoboro mito (MPD) ≤ 1 ≤ 5 ≤ 10 cm−2^-2−2
Ubushobozi bwo guhangana n'amashanyarazi ≥ 1E10 ≥ 1E5 ≥ 1E5 Ω·cm
Dopant Byakuweho Byakuweho Byakuweho  
Icyerekezo cy'ibanze cy'ubugari {1-100} ± 5.0° {1-100} ± 5.0° {1-100} ± 5.0° impamyabumenyi
Uburebure bw'ibanze bw'ikiraro 32.5 ± 3.0 32.5 ± 3.0 32.5 ± 3.0 mm
Uburebure bwa kabiri bw'ikiraro 18.0 ± 2.0 18.0 ± 2.0 18.0 ± 2.0 mm
Icyerekezo cya kabiri cy'icyitegererezo Ubushyuhe bwa 90° CW uvuye mu nzu y'ibanze ± 5.0° Ubushyuhe bwa 90° CW uvuye mu nzu y'ibanze ± 5.0° Ubushyuhe bwa 90° CW uvuye mu nzu y'ibanze ± 5.0° impamyabumenyi
Kutagaragaza Edge 3 3 3 mm
LTV/TTV/Umuheto/Umupfundo 3 / 10 / ± 30 / 40 3 / 10 / ± 30 / 40 5 / 15 / ± 40 / 45 µm
Ubukana bw'ubuso Isura: CMP, Isura: Irasekuye Isura: CMP, Isura: Irasekuye Isura: CMP, Isura: Irasekuye  
Uduce (Urumuri rwinshi) Nta na kimwe Nta na kimwe Nta na kimwe  
Amasahani ya Hex (Urumuri rwinshi) Nta na kimwe Nta na kimwe Agace k'ikusanyirizo 10% %
Uduce twa Polytype (Urumuri rwinshi) Agace k'ikusanyirizo 5% Agace k'ikusanyirizo 20% Akarere karundanyijemo 30% %
Imikufi (Urumuri rwinshi) ≤ imikufi 5, uburebure buhuriweho ≤ 150 ≤ imikufi 10, uburebure buhuriweho ≤ 200 ≤ imikufi 10, uburebure buhuriweho ≤ 200 mm
Gukata inkombe Nta na kimwe ≥ 0.5 mm ubugari/ubujyakuzimu 2 byemewe ≤ 1 mm ubugari/ubujyakuzimu 5 byemewe ≤ 5 mm ubugari/ubujyakuzimu mm
Kwanduza ubuso Nta na kimwe Nta na kimwe Nta na kimwe  

Porogaramu

1. Ingufu z'amashanyarazi
Icyuho kinini cy’umugozi n’ubushyuhe bwinshi bw’ibikoresho bya HPSI SiC bituma biba byiza ku bikoresho by’amashanyarazi bikora mu bihe bikomeye, nko:
●Ibikoresho bifite ingufu nyinshi: Harimo MOSFET, IGBT, na Schottky Barrier Diodes (SBDs) kugira ngo ingufu zihindurwe neza.
●Sisitemu z'ingufu zisubira: Nk'imashini zikoresha imirasire y'izuba n'izikoresha turbine z'umuyaga.
●Ibinyabiziga by'amashanyarazi (EV): Bikoreshwa mu byuma bihindura amashanyarazi, ibyuma bitanga umuriro, na sisitemu z'amashanyarazi kugira ngo binoze imikorere no kugabanya ingano.

2. Porogaramu za RF na Microwave
Ubushobozi bwo kugabanya ubukana bw'amashanyarazi n'igihombo gito cya dielectric cya HPSI wafers ni ingenzi kuri sisitemu ya radio-frequency (RF) na micro-microwave, harimo:
●Ibikorwa remezo by'itumanaho: Sitasiyo z'ibanze z'imiyoboro ya 5G n'itumanaho rya satelite.
●Ubwoko n'Ubwugarizi: Sisitemu za Radar, antene za phased-array, n'ibice bya avionics.

3. Ikoranabuhanga rya Optoelectronics
Umucyo n'icyuho kinini cya 4H-SiC bituma ikoreshwa mu bikoresho by'ikoranabuhanga, nka:
●Imashini zipima ikirere zikoresheje UV: Zikoreshwa mu kugenzura ibidukikije no gusuzuma indwara.
●Amatara y'amashanyarazi menshi: Ashyigikira sisitemu z'amatara zikomeye.
●Diode za Laser: Zikoreshwa mu nganda no mu buvuzi.

4. Ubushakashatsi n'Iterambere
Ibikoresho bya HPSI SiC bikoreshwa cyane muri laboratwari z’ubushakashatsi n’iterambere mu bushakashatsi ku miterere y’ibikoresho bigezweho n’ikorwa ry’ibikoresho, harimo:
●Gukura k'urutonde rw'imbere mu gice cy'imbere: Inyigo ku kugabanya inenge no kunoza urwego rw'imbere mu gice.
●Inyigo ku bijyanye n'uburyo ibintu bigenda: Iperereza ku bijyanye n'uburyo electron n'imyobo bitwara ibintu bifite isuku nyinshi.
●Ishusho: Iterambere ry'ibanze ry'ibikoresho bishya n'imirongo.

Ibyiza

Ubwiza bwo hejuru:
Ubuziranenge bwinshi n'ubucucike buke bitanga urubuga rwizewe rwo gukoresha mu buryo bugezweho.

Guhagarara neza k'ubushyuhe:
Imiterere myiza yo gukwirakwiza ubushyuhe ituma ibikoresho bikora neza mu gihe cy'ingufu nyinshi n'ubushyuhe bwinshi.

Guhuza neza:
Imiterere ihari n'ubugari bwihariye bifasha guhuza n'ibikenewe mu bikoresho bitandukanye.

Kuramba:
Ubukana budasanzwe n'ubudahangarwa bw'imiterere bigabanya kwangirika no guhindagurika mu gihe cyo gutunganya no gukora.

Ubushobozi bwo guhindura ibintu:
Ikwiriye inganda zitandukanye, kuva ku ngufu zishobora kuvugururwa kugeza ku byuma bitwara ikirere n'itumanaho.

Umwanzuro

Wafer ya Silicon Carbide ifite ubushyuhe bwinshi bwa santimetero 3 igaragaza ikoranabuhanga ry’ibanze rya substrate ku bikoresho bifite ingufu nyinshi, frequency nyinshi, na optoelectronic. Uruvange rwayo rw’imiterere myiza y’ubushyuhe, amashanyarazi, na mekanike rutuma habaho imikorere yizewe mu bidukikije bigoye. Kuva ku bikoresho by’amashanyarazi na sisitemu za RF kugeza kuri optoelectronics n’ubushakashatsi n’iterambere bigezweho, izi substrates za HPSI zitanga urufatiro rw’udushya tw’ejo hazaza.
Kubindi bisobanuro cyangwa gutanga commande, turagusaba kutwandikira. Itsinda ryacu rya tekiniki rirahari kugira ngo riguhe ubuyobozi n'uburyo bwo guhindura ibintu hakurikijwe ibyo ukeneye.

Ishusho irambuye

SiC Semi-Insulation03
SiC Semi-Insulation02
SiC Semi-Insulation06
SiC Semi-Insulation05
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