Uburebure bwa santimetero 3 (Undoped) Silicon Carbide Wafers igice cya kabiri cya Sic Substrates (HPSl)

3 inch Uburebure Bwinshi (Udafunguwe) Silicon Carbide Wafers igice cya kabiri-Igizwe na Sic Substrates (HPSl) Ishusho Yerekanwe

Ibisobanuro bigufi:

Wafer ya santimetero 3 Yisukuye (HPSI) Silicon Carbide (SiC) wafer ni progaramu yo mu rwego rwo hejuru ikozwe neza cyane, ikoreshwa cyane, na optoelectronic progaramu. Ihingurwa rifite ibikoresho bidafunguye, bifite isuku ryinshi rya 4H-SiC, iyi waferi yerekana ubushyuhe bwiza bwumuriro, umurongo mugari, hamwe nuburyo budasanzwe bwo kubika ibyuma, bigatuma biba ngombwa mugutezimbere ibikoresho bigezweho. Hamwe nuburinganire bwimiterere nubuziranenge bwubuso, HPSI SiC substrate ikora nk'ishingiro ryikoranabuhanga rizakurikiraho mumashanyarazi ya elegitoroniki, itumanaho, ninganda zo mu kirere, zunganira udushya mubice bitandukanye.

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Ibicuruzwa birambuye

Ibicuruzwa

Ibyiza

1. Ibyiza byumubiri nuburyo
Type Ubwoko bwibikoresho: Isuku ryinshi (Undoped) Carbide ya Silicon (SiC)
● Diameter: santimetero 3 (76.2 mm)
● Umubyimba: 0.33-0.5 mm, birashobora gushingira kubisabwa.
Structure Imiterere ya Crystal: 4H-SiC polytype hamwe na latike ya mpande esheshatu, izwiho kugenda cyane kuri electron no guhagarara neza.
Icyerekezo:
oStandard: [0001] (C-indege), ibereye murwego runini rwa porogaramu.
o Ibyifuzo: Off-axis (4 ° cyangwa 8 ° tilt) kugirango yongere ubwiyongere bwa epitaxial yibikoresho.
● Uburinganire: Ubwinshi bwubunini butandukanye (TTV) Quality Ubwiza bwubuso:
oPolised to oLow-defence density (<10 / cm² micropipe density). 2. Ibyiza byamashanyarazi ● Kurwanya:> 109 ^ 99 Ω · cm, bikomezwa no kurandura dopants nkana.
Strength Imbaraga za dielectric: Kwihangana kwinshi kwa voltage hamwe nigihombo gito cya dielectric, nibyiza kubishobora gukoreshwa cyane.
Conduc Ubushuhe bwumuriro: 3.5-4.9 W / cm · K, ituma ubushyuhe bukwirakwizwa neza mubikoresho bikora neza.

3. Ibyiza byubushyuhe nubukanishi
Band Umuyoboro mugari: 3.26 eV, ushyigikira ibikorwa munsi ya voltage nyinshi, ubushyuhe bwinshi, hamwe nimirasire myinshi.
. Gukomera: Mohs igipimo cya 9, cyemeza imbaraga zo kurwanya imashini mugihe cyo gutunganya.
Co Coefficient yo Kwagura Ubushyuhe: 4.2 × 10−6 / K4.2 \ inshuro 10 ^ {- 6} / \ umwandiko {K} 4.2 × 10−6 / K, bituma ihindagurika ryimiterere ihindagurika ryubushyuhe.

Parameter	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Dummy Grade	Igice
Icyiciro	Icyiciro cy'umusaruro	Icyiciro cy'ubushakashatsi	Dummy Grade
Diameter	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Umubyimba	500 ± 25	500 ± 25	500 ± 25	µm
Icyerekezo cya Wafer	Kuri axis: <0001> ± 0.5 °	Kuri axis: <0001> ± 2.0 °	Kuri axis: <0001> ± 2.0 °	impamyabumenyi
Ubucucike bwa Micropipe (MPD)	≤ 1	≤ 5	≤ 10	cm - 2 ^ -2−2
Kurwanya amashanyarazi	≥ 1E10	≥ 1E5	≥ 1E5	Ω · cm
Dopant	Undoped	Undoped	Undoped
Icyerekezo Cyibanze	{1-100} ± 5.0 °	{1-100} ± 5.0 °	{1-100} ± 5.0 °	impamyabumenyi
Uburebure bwibanze	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Uburebure bwa kabiri	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Icyerekezo cya kabiri cya Flat	90 ° CW kuva kumurongo wambere ± 5.0 °	90 ° CW kuva kumurongo wambere ± 5.0 °	90 ° CW kuva kumurongo wambere ± 5.0 °	impamyabumenyi
Guhezwa	3	3	3	mm
LTV / TTV / Umuheto / Intambara	3/10 / ± 30/40	3/10 / ± 30/40	5/15 / ± 40/45	µm
Ubuso	Si-isura: CMP, C-isura: Yeza	Si-isura: CMP, C-isura: Yeza	Si-isura: CMP, C-isura: Yeza
Ibice (Umucyo mwinshi)	Nta na kimwe	Nta na kimwe	Nta na kimwe
Isahani ya Hex (Umucyo mwinshi)	Nta na kimwe	Nta na kimwe	Agace kegeranye 10%	%
Agace ka polytype (Umucyo mwinshi)	Agace kegeranye 5%	Agace kegeranye 20%	Agace kegeranye 30%	%
Igishushanyo (Umucyo mwinshi)	 5 gushushanya, uburebure bwuzuye ≤ 150	Scr Igishushanyo 10, uburebure bwa cumulative ≤ 200	Scr Igishushanyo 10, uburebure bwa cumulative ≤ 200	mm
Gukata Impande	Nta na kimwe ≥ 0.5 mm ubugari / ubujyakuzimu	2 byemewe ≤ 1 mm ubugari / ubujyakuzimu	5 yemerewe ≤ 5 mm ubugari / ubujyakuzimu	mm
Kwanduza Ubuso	Nta na kimwe	Nta na kimwe	Nta na kimwe

Porogaramu

1. Amashanyarazi
Umuyoboro mugari hamwe nubushyuhe bwo hejuru bwubushyuhe bwa HPSI SiC butuma biba byiza kubikoresho byamashanyarazi bikora mubihe bikabije, nka:
Devices Ibikoresho bikoresha amashanyarazi menshi: Harimo MOSFETs, IGBTs, na Schottky Barrier Diode (SBDs) kugirango imbaraga zihindurwe neza.
Systems Ingufu zishobora kuvugururwa: nka inverteri yizuba hamwe nubushakashatsi bwumuyaga.
Veh Imodoka zikoresha amashanyarazi (EV): Zikoreshwa muri inverter, charger, na powertrain sisitemu yo kunoza imikorere no kugabanya ubunini.

2. Porogaramu ya RF na Microwave
Kurwanya cyane hamwe no gutakaza dielectric nkeya ya wafer ya HPSI ningirakamaro kuri radio-yumurongo (RF) na sisitemu ya microwave, harimo:
Infrastructure Ibikorwa Remezo by'itumanaho: Sitasiyo fatizo y'imiyoboro ya 5G n'itumanaho rya satelite.
Space Ikirere n'Ingabo: Sisitemu ya Radar, antenne igizwe n'ibice, hamwe n'ibigize avionics.

3. Amashanyarazi
Gukorera mu mucyo no kwaguka kwa 4H-SiC ituma ikoreshwa mu bikoresho bya optoelectronic, nka:
● UV Photodetector: Kubikurikirana ibidukikije no gusuzuma indwara.
LED Amashanyarazi akomeye: Gushyigikira sisitemu ikomeye yo kumurika.
Odes Laser Diode: Kubikorwa byinganda nubuvuzi.

4. Ubushakashatsi n'Iterambere
HPSI SiC substrates ikoreshwa cyane muri laboratoire yinganda n’inganda R&D mugushakisha ibikoresho bigezweho no guhimba ibikoresho, harimo:
Gukura kwa Epitaxial Layeri: Ubushakashatsi ku kugabanya inenge no gutezimbere.
Studies Ubushakashatsi bwabatwara ibintu: Iperereza ryubwikorezi bwa electron nu mwobo mubikoresho bifite isuku nyinshi.
● Prototyping: Iterambere ryambere ryibikoresho bishya hamwe nizunguruka.

Ibyiza

Ubwiza buhebuje:
Isuku ryinshi nubucucike buke butanga urubuga rwizewe kubikorwa byiterambere.

Ubushyuhe bwumuriro:
Ubushuhe buhebuje bwo gukwirakwiza butuma ibikoresho bikora neza munsi yubushyuhe bwinshi nubushyuhe.

Ubwuzuzanye bwagutse:
Icyerekezo kiboneka hamwe nuburyo bwihariye bwo guhitamo byemeza guhuza nibisabwa ibikoresho bitandukanye.

Kuramba:
Ubukomere budasanzwe hamwe nuburyo butajegajega bigabanya kwambara no guhindura ibintu mugihe cyo gutunganya no gukora.

Guhindura:
Birakwiye ku nganda zitandukanye, kuva ingufu zishobora kongera ingufu mu kirere no mu itumanaho.

Umwanzuro

Uburebure bwa santimetero 3 Uburebure bwa Semi-Insulation Silicon Carbide wafer yerekana isonga rya tekinoroji ya substrate kubububasha bukomeye, inshuro nyinshi, hamwe nibikoresho bya optoelectronic. Ihuriro ryibintu byiza byumuriro, amashanyarazi, nubukanishi bitanga imikorere yizewe mubidukikije bigoye. Kuva amashanyarazi ya elegitoronike hamwe na sisitemu ya RF kugeza kuri optoelectronics hamwe na R&D igezweho, izi substres za HPSI zitanga umusingi wo guhanga udushya.
Kubindi bisobanuro cyangwa gutanga itegeko, nyamuneka twandikire. Itsinda ryacu rya tekinike rirahari kugirango ritange ubuyobozi hamwe nuburyo bwo guhitamo bijyanye nibyo ukeneye.